Patents by Inventor Chun-Lung Wu

Chun-Lung Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11476348
    Abstract: A manufacturing method of a semiconductor device includes the following steps. First patterned structures are formed on a substrate. Each of the first patterned structures includes a first semiconductor pattern and a first bottom protection pattern disposed between the first semiconductor pattern and the substrate. A first protection layer is formed on the first patterned structures and the substrate. A part of the first protection layer is located between the first patterned structures. A first opening is formed in the first protection layer between the first patterned structures. The first opening penetrates the first protection layer and exposes a part of the substrate. A first etching process is performed after forming the first opening. A part of the substrate under the first patterned structures is removed by the first etching process for suspending at least a part of each of the first patterned structures above the substrate.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: October 18, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chuan-Chang Wu, Zhen Wu, Hsuan-Hsu Chen, Chun-Lung Chen
  • Publication number: 20220280897
    Abstract: A method for detecting and filtering indoor polluted gas includes providing a plurality of gas detection devices to detect the polluted gas in an indoor space; providing a plurality of filtration and purification devices to filter the polluted gas and to receive a first control command through a wireless communication to enable filtration of the polluted gas; and providing a connection device to perform intelligent computation to receive and compare the data of the polluted gas detected by the gas detection devices to perform intelligent computation to figure out a location of the polluted gas and intelligently and selectively transmit the first control command to a filtration and purification device which at the location of the polluted gas, thereby filtering the polluted gas and retaining the polluted gas from spreading outwardly, allowing the polluted gas in the indoor space to become a clean, safe, and breathable gas.
    Type: Application
    Filed: January 27, 2022
    Publication date: September 8, 2022
    Inventors: Hao-Jan Mou, Chin-Chuan Wu, Yung-Lung Han, Chi-Feng Huang, Chang-Yen Tsai, Wei-Ming Lee, Chun-Yi Kuo
  • Publication number: 20220278159
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.
    Type: Application
    Filed: May 18, 2022
    Publication date: September 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh FANG, Ming-Chi WU, Ji-Heng JIANG, Chi-Yuan WEN, Chien-Nan TU, Yu-Lung YEH, Shih-Shiung CHEN, Kun-Yu LIN
  • Patent number: 11417802
    Abstract: A light-emitting device, includes: a semiconductor stack, including a top surface, wherein the top surface includes a first region and a second region which are coplanar; a current barrier layer formed on the first region, wherein the current barrier layer includes an insulating material; and a transparent conductive layer formed on the current barrier layer and the second region; and a first electrode formed on the transparent conductive layer; wherein the current barrier layer includes: an electrode region at a position corresponding to the first electrode, having a shape substantially the same as the first electrode; and a plurality of extension regions extending from the electrode region and not covered by the first electrode.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: August 16, 2022
    Assignee: EPISTAR CORPORATION
    Inventors: Jar-Yu Wu, Ching-Jang Su, Chun-Lung Tseng, Ching-Hsing Shen
  • Patent number: 11416047
    Abstract: A heat dissipation system of a portable electronic device including a first processing element, a second processing element, a heat dissipation module located between the first processing element and the second processing element, a first heat transferring member, and a second heat transferring member, is provided. The first processing element has a first region and a second region. The first heat transferring member is in thermal contact with the first region, the second processing element, and the heat dissipation module. The second heat transferring member is in thermal contact with the second region and the heat dissipation module.
    Type: Grant
    Filed: May 11, 2021
    Date of Patent: August 16, 2022
    Assignees: Micro-Star International Co., Ltd., MSI Computer (Shenzhen) Co., Ltd
    Inventors: Yu An Wang, Chun Mo Wu, Chih-Shiang Hsu, Wei En Kao, Shuan-Cheng Su, Kung Ming Shen, Chia Chun Lin, Chung-Bi Lee, Huan-Jung Lee, Cheng-Lung Chen, Chia Hao Yeh
  • Publication number: 20220251687
    Abstract: A method for manufacturing an integrally-formed alloy structure having a brazing surface includes the following steps. Firstly, a magnesium-containing alloy is provided. Next, the magnesium-containing alloy is heat treated to obtain a vacuum heat-treated alloy structure. Then, the top surface of the vacuum heat-treated alloy structure is reduced to expose the brazing surface. Finally, the integrally-formed alloy structure having the brazing surface is formed.
    Type: Application
    Filed: April 28, 2022
    Publication date: August 11, 2022
    Inventors: CHING-MING YANG, TZE-YANG YEH, CHUN-LUNG WU
  • Publication number: 20220238572
    Abstract: A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.
    Type: Application
    Filed: April 11, 2022
    Publication date: July 28, 2022
    Inventors: Ming-Chi Wu, Chun-Chieh Fang, Bo-Chang Su, Chien Nan Tu, Yu-Lung Yeh, Kun-Yu Lin, Shih-Shiung Chen
  • Patent number: 11310916
    Abstract: A metal circuit on a polymer composite substrate surface and a method for manufacturing the same are provided. The metal circuit on the polymer composite substrate surface includes a polymer composite layer and a metal circuit layer. The metal circuit layer is formed from a metal piece molded by metal processing, and is integrated onto a surface of the polymer composite layer. The metal circuit layer has one or a plurality of circuit grooves formed therein, the polymer composite layer has one or a plurality of bulges formed therein, and the bulge is deformed and bulged at the corresponding circuit groove.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: April 19, 2022
    Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
    Inventors: Jhao-Siang Jheng, Chun-Lung Wu
  • Patent number: 11081421
    Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a first polymer composite layer, a second polymer composite layer, a first ceramic layer, a second ceramic layer, and a heat dissipation layer. The first ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the first layer of chips, and the second ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the second layer of chips.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: August 3, 2021
    Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
    Inventors: Tzu-Hsuan Wang, Tze-Yang Yeh, Chun-Lung Wu
  • Publication number: 20210180166
    Abstract: An alloy structure having a low magnesium content surface includes an alloy layer having an original magnesium content and a magnesium-deficient layer formed on the alloy layer, and the magnesium-deficient layer has a low magnesium content surface.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 17, 2021
    Inventors: CHING-MING YANG, TZE-YANG YEH, CHUN-LUNG WU
  • Publication number: 20210183730
    Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. The first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals. The first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively. The number of chips of the first layer of chips is larger than that of the second layer of chips such that the first copper layer has a greater thickness than the second copper layer.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 17, 2021
    Inventors: TZU-HSUAN WANG, TZE-YANG YEH, CHUN-LUNG WU
  • Publication number: 20210180889
    Abstract: A copper-alloy heat-dissipation structure with a milled surface includes a heat-dissipation main body. The heat-dissipation main body has a first milled surface and a second milled surface that are opposite to each other, where heat-dissipation fins are formed on the first milled surface, and the maximum height roughness Rz of the second milled surface ranges from 1.5 ?m to 5.4 ?m.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 17, 2021
    Inventors: MIN-HORNG LIU, TZE-YANG YEH, CHUN-LUNG WU
  • Publication number: 20210183731
    Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a first polymer composite layer, a second polymer composite layer, a first ceramic layer, a second ceramic layer, and a heat dissipation layer. The first ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the first layer of chips, and the second ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the second layer of chips.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 17, 2021
    Inventors: TZU-HSUAN WANG, TZE-YANG YEH, CHUN-LUNG WU
  • Patent number: 11037857
    Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. The first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals. The first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively. The number of chips of the first layer of chips is larger than that of the second layer of chips such that the first copper layer has a greater thickness than the second copper layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: June 15, 2021
    Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
    Inventors: Tzu-Hsuan Wang, Tze-Yang Yeh, Chun-Lung Wu
  • Patent number: 10861768
    Abstract: An IGBT module with an improved heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a polymer composite layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on the heat dissipation layer. The polymer composite layer is disposed on the thermal spray layer. The thick copper layer is disposed on the polymer composite layer. The bonding layer is disposed on the thick copper layer. The layer of IGBT chips is disposed on the bonding layer.
    Type: Grant
    Filed: June 16, 2019
    Date of Patent: December 8, 2020
    Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
    Inventors: Tze-Yang Yeh, Chun-Lung Wu
  • Publication number: 20200185303
    Abstract: An IGBT module with an improved heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a polymer composite layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on the heat dissipation layer. The polymer composite layer is disposed on the thermal spray layer. The thick copper layer is disposed on the polymer composite layer. The bonding layer is disposed on the thick copper layer. The layer of IGBT chips is disposed on the bonding layer.
    Type: Application
    Filed: June 16, 2019
    Publication date: June 11, 2020
    Inventors: TZE-YANG YEH, CHUN-LUNG WU
  • Publication number: 20190363033
    Abstract: An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.
    Type: Application
    Filed: November 6, 2018
    Publication date: November 28, 2019
    Inventors: TZE-YANG YEH, CHUN-LUNG WU
  • Patent number: 10475723
    Abstract: An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: November 12, 2019
    Assignee: Amulaire thermal technology, INC.
    Inventors: Tze-Yang Yeh, Chun-Lung Wu
  • Patent number: 10015907
    Abstract: A heat dissipating device includes a thermal conductive substance, a plurality of heat-radiating protrusions and a plurality of turbulence-generating structures. The thermal conductive substance has a first surface and a second surface opposite to the first surface. The heat-radiating protrusions are integrally formed with the thermal conductive substance on the first surface. At least one of the turbulence-generating structures is formed on the first surface of the thermal conductive substance in concaved manner, and arranged around a bottom periphery of the heat-radiating protrusions, so as to obstruct a development of a boundary layer around the bottom of the heat-radiating protrusions.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: July 3, 2018
    Assignee: AMULAIRE THERMAL TECHNOLOGY, INC.
    Inventors: Chun-Lung Wu, Ming-Sian Lin
  • Publication number: 20170280588
    Abstract: A heat dissipating device includes a thermal conductive substance, a plurality of heat-radiating protrusions and a plurality of turbulence-generating structures. The thermal conductive substance has a first surface and a second surface opposite to the first surface. The heat-radiating protrusions are integrally formed with the thermal conductive substance on the first surface. At least one of the turbulence-generating structures is formed on the first surface of the thermal conductive substance in concaved manner, and arranged around a bottom periphery of the heat-radiating protrusions, so as to obstruct a development of a boundary layer around the bottom of the heat-radiating protrusions.
    Type: Application
    Filed: March 23, 2016
    Publication date: September 28, 2017
    Inventors: CHUN-LUNG WU, MING-SIAN LIN