Patents by Inventor Chun-Ming Chiou

Chun-Ming Chiou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of forming the same
    Patent number: 10096722
    Abstract: A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: October 9, 2018
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Chun-Ming Chiou, Cheng-Chi Lin
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20180097124
    Abstract: A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 5, 2018
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Chun-Ming Chiou, Cheng-Chi Lin
  • Semiconductor device and Zener diode
    Patent number: 9735291
    Abstract: A semiconductor device includes a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of a first-conductivity-type disposed in the well region; a second impurity region of the second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: August 15, 2017
    Assignee: Macronix International Co., Ltd.
    Inventors: Chun-Ming Chiou, Yu-Jui Chang, Cheng-Chi Lin