Abstract: A mechanism for forming a semiconductor device is described. The semiconductor device includes a substrate and an inter-layer dielectric (ILD) layer over the substrate. The intermediate semiconductor device further includes a first layer set over the ILD layer and a second layer set over the first layer set. The intermediate semiconductor device further includes a photoresist layer over the second layer set. The method further includes etching the second layer set to form a tapered opening in the second layer set, the tapered opening having sidewalls at an angle with respect to a top surface of the ILD layer ranging from about 85-degrees to about 90-degrees, but less than 90-degrees. The method further includes etching the first layer set to form an opening in the first layer set and etching the ILD layer using the first layer set as a mask to form an opening in the ILD layer.

Abstract: The present disclosure provides methods and systems for providing a similarity index in semiconductor process control. One of the methods disclosed herein is a method for semiconductor fabrication process control. The method includes steps of receiving a first semiconductor device wafer and receiving a second semiconductor device wafer. The method also includes a step of collecting metrology data from the first and second semiconductor device wafers. The metrology data includes a first set of vectors associated with the first semiconductor device wafer and a second set of vectors associated with the second semiconductor device wafer. The method includes determining a similarity index based in part on a similarity index value between a first vector from the first set of vectors and a second vector from the second set of vectors and continuing to process additional wafers under current parameters when the similarity index is above a threshold value.

Abstract: The present disclosure provides methods and systems for providing a similarity index in semiconductor process control. One of the methods disclosed herein is a method for semiconductor fabrication process control. The method includes steps of receiving a first semiconductor device wafer and receiving a second semiconductor device wafer. The method also includes a step of collecting metrology data from the first and second semiconductor device wafers. The metrology data includes a first set of vectors associated with the first semiconductor device wafer and a second set of vectors associated with the second semiconductor device wafer. The method includes determining a similarity index based in part on a similarity index value between a first vector from the first set of vectors and a second vector from the second set of vectors and continuing to process additional wafers under current parameters when the similarity index is above a threshold value.

Abstract: A method for swapping display contents between a first and a second screen. The first screen is a primary screen. A window is displayed on one of the first and the second screen. The method includes: calculating a window movement distance according to a relative position between the first and the second screen; performing swapping to set the second screen as the primary screen; obtaining a coordinate of the window after swapping; obtaining a first coordinate by adding the window movement distance to the coordinate of the window after swapping if the window is located in the first screen before swapping; obtaining a second coordinate by subtracting the window movement distance from the coordinate of the window after swapping if the window is located in the second screen before swapping; moving the window from one of the first and the second screen to the other.

Abstract: A method for swapping display contents between a first and a second screen. The first screen is a primary screen. A window is displayed on one of the first and the second screen. The method includes: calculating a window movement distance according to a relative position between the first and the second screen; performing swapping to set the second screen as the primary screen; obtaining a coordinate of the window after swapping; obtaining a first coordinate by adding the window movement distance to the coordinate of the window after swapping if the window is located in the first screen before swapping; obtaining a second coordinate by subtracting the window movement distance from the coordinate of the window after swapping if the window is located in the second screen before swapping; moving the window from one of the first and the second screen to the other.

Abstract: An exposure system and method for use in an exposure tool. The system includes a compensation unit and an exposure unit. The compensation unit receives a fine-tuning value for an overlay correction parameter for a product in a first run. The compensation unit further receives an adjustment period for an exposure tool, an adjustment time for the exposure tool, and a process time for the product in a second run. The compensation unit also receives an equipment baseline offset of the exposure tool after adjustment, and compensates the fine-tuning value for the overlay correction parameter for the product accordingly. The exposure tool performs overlay processes on a wafer according to the compensated fine-tuning value for the overlay correction parameter.

Abstract: An exposure system and method for use in an exposure tool. The system includes a compensation unit and an exposure unit. The compensation unit receives a fine-tuning value for an overlay correction parameter for a product in a first run. The compensation unit further receives an adjustment period for an exposure tool, an adjustment time for the exposure tool, and a process time for the product in a second run. The compensation unit also receives an equipment baseline offset of the exposure tool after adjustment, and compensates the fine-tuning value for the overlay correction parameter for the product accordingly. The exposure tool performs overlay processes on a wafer according to the compensated fine-tuning value for the overlay correction parameter.

Abstract: A system and method are provided for establishing a process parameter for manufacturing a semiconductor product prior to receiving manufacturing feedback regarding the process parameter. In one example, the method includes identifying a technology to which the process parameter is related and identifying at least one existing part manufactured using the identified technology. Information reflecting feedback data obtained while manufacturing the part may be retrieved and the process parameter may be calculated based on the retrieved information.

Abstract: A method for controlling exposure energy on a wafer substrate, with a feedback process control signal of wafer thickness critical dimension, and with a feed forward process control signal of a compensation amount that compensates for thickness variations of an interlayer of the wafer substrate.