Abstract: A MEMS structure is provided. The MEMS structure includes a substrate having an opening portion and a backplate disposed on one side of the substrate. The backplate comprises a backplate conductive layer and a backplate insulating layer stacked with each other. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate and extending across the opening portion of the substrate. The MEMS structure further includes a pillar structure connected with the backplate. The pillar structure comprises a pillar conductive layer and a pillar insulating layer stacked with each other.

Abstract: The present invention continuously generates a signal at an acceptable frequency without utilizing the PLL to modify the operation of the VCO. When the VCO is initialized properly to output a signal at a specific frequency, the VCO operates on its own to continuously output signals, and the VCO state is modified at regular intervals. Thus, when the interval is short enough and when the VCO is modified to the initial state every time, the VCO state will not deviate significantly from the initial state during these intervals. Thus, the VCO continuously generate signals with frequencies acceptably closed to the specific frequency. That is to say, the invention utilizes the injection lock to modify the operation of the VCO. To compare with the convention skills utilizing the PLL which has to feed back the signal generated by the VCO to the PLL for modifying the VCO state dynamically, the utilization of the injection lock simplifies the hardware and streamlines the process.

Abstract: A thin film transistor may be manufactured by forming a gate electrode in an insulating layer over a substrate, forming a gate dielectric over the gate electrode and the insulating layer, forming an active layer over the gate electrode, and forming a source electrode and a drain electrode contacting a respective portion of a top surface of the active layer. A surface oxygen concentration may be increased in at least one of the gate dielectric and the active layer by introducing oxygen atoms into a surface region of a respective one of the gate dielectric and the active layer.

Abstract: An electronic device includes a temporary storage base, an adhesive layer, light-emitting elements, and a sealant. The adhesive layer is disposed on the temporary storage base. The light-emitting elements are disposed on the adhesive layer. The sealant is disposed on the temporary storage base and surrounds the adhesive layer. In addition, other electronic devices and a manufacturing method of the electronic device are also provided.

Abstract: Provided is a ferroelectric memory device having a dielectric layer vertically interleaved between a first conductive line and a second conductive line. A first ferroelectric portion is arranged along a sidewall of the first conductive line and a second ferroelectric portion is arranged along a sidewall of the second conductive line. A channel layer is arranged along sides of the dielectric layer, the first conductive line, and the second conductive line. A topmost surface of the first ferroelectric portion is vertically separated from a bottommost surface of the second ferroelectric portion by the channel layer.

Abstract: A method of forming a memory device includes: forming a first layer stack and a second layer stack successively over a substrate, the first layer stack and the second layer stack having a same layered structure that includes a dielectric material, a channel material over the dielectric material, and a source/drain material over the channel material; forming openings that extend through the first layer stack and the second layer stack; forming inner spacers by replacing portions of the source/drain material exposed by the openings with a first dielectric material; lining sidewalls of the openings with a ferroelectric material; forming gate electrodes by filling the openings with an electrically conductive material; forming a recess through the first layer stack and the second layer stack, the recess extending from a sidewall of the second layer stack toward the gate electrodes; and filling the recess with a second dielectric material.

Abstract: A method includes forming a fin protruding from a substrate, the fin including an epitaxial stack over a fin base and a hard mask layer over the epitaxial stack, the epitaxial stack including first and second semiconductor layers of different material compositions, performing a first etching process to etch the hard mask layer, the first etching process including applying a first combination of etchants, performing a second etching process to etch the epitaxial stack, the second etching process including applying a second combination of etchants, and performing a third etching process to etch the fin base, the third etching process including applying a third combination of etchants. The first, second, and third combinations of etchants are different from each other.

Abstract: A process of forming a three-dimensional (3D) memory array includes forming a stack having a plurality of conductive layers of carbon-based material separated by dielectric layers. Etching trenches in the stack divides the conductive layers into conductive strips. The resulting structure includes a two-dimensional array of horizontal conductive strips. Memory cells may be distributed along the length of each strip to provide a 3D array. The conductive strips together with additional conductive structure that may have a vertical or horizontal orientation allow the memory cells to be addressed individually. Forming the conductive layers with carbon-based material facilitate etching the trenches to a high aspect ratio. Accordingly, forming the conductive layers of carbon-based material enables the memory array to have more layers or to have a higher area density.

Abstract: A method for performing camera modality adaptation in a simultaneous localization and mapping (SLAM) device is provided. The SLAM device includes a camera sensor and a SLAM processor. The method includes acquiring data from the SLAM device, and determining, based on the acquired data, an operational condition of the SLAM device. The method also includes deciding, based on the determined operational condition, a camera modality for the SLAM device. The method further includes controlling, based on the decided camera modality, a camera modality of an image sequence inputted into the SLAM processor.

Abstract: A MEMS structure is provided. The MEMS structure includes a substrate having an opening portion and a backplate disposed on one side of the substrate and having acoustic holes. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate and extending across the opening portion of the substrate. The diaphragm includes a ventilation hole, and an air gap is formed between the diaphragm and the backplate. The MEMS structure further includes a filler structure disposed on the diaphragm, and a portion of the filler structure is disposed in the ventilation hole.

Abstract: The present disclosure provides a package structure and a method for forming a package structure. The package structure includes a first die having a front surface and a back surface opposite to the front surface; and a thermal management structure over the back surface. The thermal management structure includes a first copper-phosphorous alloy layer thermally coupled to the back surface of the first die.

Abstract: A method includes forming a semiconductor fin over a substrate; forming a gate structure over the semiconductor fin; forming a helmet layer lining the gate structure and the semiconductor fin; etching the helmet layer to remove portions of the helmet layer from opposite sidewalls of the gate structure, wherein the remaining helmet layer comprises a first remaining portion on a top surface of the gate structure and a second remaining portion on a top surface of the semiconductor fin; forming a spacer layer covering the gate structure, wherein the spacer layer is in contact with the first remaining portion and the second remaining portion of the remaining helmet layer; etching the spacer layer and the remaining helmet layer to form gate spacers, wherein each of the gate spacers has a stepped sidewall; and forming source/drain epitaxy structures on opposite sides of the gate structure.

Abstract: A double-sided flexible circuit board includes a flexible substrate, through circuit lines, first circuit lines and second circuit lines. The first circuit lines are formed on a top surface of the flexible substrate and each includes a first segment, a bent segment and a second segment. One end of the first segment is connected to a first connection end of one of the through circuit lines. Both ends of the bent segment are connected to the other end of the first segment and one end of the second segment, respectively. A second distance between the adjacent second segments is greater than a first distance between the adjacent first segments. The second circuit lines are formed on a bottom surface of the flexible substrate and each is connected to a second connection end of one of the through circuit lines.

Abstract: A method for CMP includes following operations. A first metal layer and a second metal layer are formed in a dielectric structure. The second metal layer is formed over a portion of the first metal layer. A first composition is provided to remove a portion of the first metal layer. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed to expose the second metal layer. A CMP operation is performed to remove a portion of the first metal layer, a portion of the second metal layer and a portion of the dielectric structure.

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.

Abstract: A method for performing frame rate adaptation in a simultaneous localization and mapping (SLAM) device is provided. The SLAM device includes a SLAM processor. The method includes: acquiring data from the SLAM device; determining, based on the acquired data, an operative condition of the SLAM device; deciding, based on the determined operative condition, a target frame rate for the SLAM device; and controlling, based on the decided target frame rate, a frame rate of an image sequence inputted into the SLAM processor.

Abstract: Embodiments provide a method and resulting structure that includes forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive fill on the barrier layer.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor comprising: a ferroelectric (FE) material contacting a word line, the FE material being a hafnium-comprising compound, and the hafnium-comprising compound comprising a rare earth metal; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line.