Patents by Inventor Chun-Ming Tsai

Chun-Ming Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10829822
    Abstract: The present invention provides a method for evaluating the efficacy of an EGFR-TKI treatment to a subject, comprising identifying the V384D mutation in said subject. By identifying said mutation, the efficacy of the EGFR-TKI treatment and the progression-free survival of said subject after treatment can be estimated.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: November 10, 2020
    Assignee: LIHPAO LIFE SCIENCE CORP.
    Inventors: Teh-Ying Chou, Chun-Ming Tsai
  • Publication number: 20190010561
    Abstract: The present invention provides a method for evaluating the efficacy of an EGFR-TKI treatment to a subject, comprising identifying the V384D mutation in said subject. By identifying said mutation, the efficacy of the EGFR-TKI treatment and the progression-free survival of said subject after treatment can be estimated.
    Type: Application
    Filed: September 21, 2018
    Publication date: January 10, 2019
    Applicant: LIHPAO LIFE SCIENCE CORP.
    Inventors: Teh-Ying CHOU, Chun-Ming TSAI
  • Patent number: 10106856
    Abstract: The present invention provides a method for evaluating the efficacy of an EGFR-TKI treatment to a subject, comprising identifying the V384D mutation in said subject. By identifying said mutation, the efficacy of the EGFR-TKI treatment and the progression-free survival of said subject after treatment can be estimated.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: October 23, 2018
    Assignee: LIHPAO LIFE SCIENCE CORP.
    Inventors: Teh-Ying Chou, Chun-Ming Tsai
  • Patent number: 9214421
    Abstract: A semiconductor device and a method of manufacturing the same are provided. A semiconductor device comprises a substrate, a conductive pattern formed on the substrate, and at least a conductive pillar having a predetermined height formed on the conductive pattern. The conductive pillar can be formed under a focus ion beam (FIB) or an electron beam environment. In one embodiment, a diameter of the conductive pillar is no more than 10 ?m.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: December 15, 2015
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Tsai, Yi-Hsuan Huang, Yueh-Ping Chung, Ya-Hui Lu
  • Publication number: 20150252435
    Abstract: The present invention provides a method for evaluating the efficacy of an EGFR-TKI treatment to an object, comprising identifying the V384D mutation in said object. By identifying said mutation, the efficacy of the EGFR-TKI treatment and the progression-free survival of said object after treatment can be estimated.
    Type: Application
    Filed: March 10, 2015
    Publication date: September 10, 2015
    Applicant: LIHPAO LIFE SCIENCE CORP.
    Inventors: Teh-Ying CHOU, Chun-Ming TSAI
  • Publication number: 20150091159
    Abstract: A semiconductor device and a method of manufacturing the same are provided. A semiconductor device comprises a substrate, a conductive pattern formed on the substrate, and at least a conductive pillar having a predetermined height formed on the conductive pattern. The conductive pillar can be formed under a focus ion beam (FIB) or an electron beam environment. In one embodiment, a diameter of the conductive pillar is no more than 10 ?m.
    Type: Application
    Filed: September 30, 2013
    Publication date: April 2, 2015
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Tsai, Yi-Hsuan Huang, Yueh-Ping Chung, Ya-Hui Lu
  • Publication number: 20120322170
    Abstract: A pinhole inspection method of an insulator layer, wherein the pinhole inspection method comprises steps as following: A dry etching process is firstly performed to remove a contiguous layer adjacent to the insulator layer. Subsequently an etching endpoint is determined and the dry etching process is then stopped in accordance with a second electron energy variation triggered by the dry etching process. Afterward, a cross-sectional morphology or topography of the insulator layer is inspected.
    Type: Application
    Filed: June 14, 2011
    Publication date: December 20, 2012
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Fu CHOU, Chun-Ming Tsai