Abstract: A two-phase immersion-type heat dissipation structure having skived fin with high porosity is provided. The two-phase immersion-type heat dissipation structure having skived fin with high porosity includes a porous heat dissipation structure having a total porosity that is equal to or greater than 5%. The porous heat dissipation structure includes a porous substrate and a plurality of porous and skived fins. The porous substrate has a first surface and a second surface that face away from each other. The second surface of the porous substrate is configured to be in contact with a heating element that is immersed in a two-phase coolant. The plurality of porous and skived fins are integrally formed on the first surface of the porous substrate by skiving. A first porosity of the plurality of porous and skived fins is greater than a second porosity of the porous substrate.

Abstract: A two-phase immersion-type heat dissipation structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate and a plurality of non-vertical fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other. The non-fin surface is configured to be in contact with a heating element immersed in a two-phase coolant. The fin surface is connected with the non-vertical fins, a cross-sectional contour of one of the non-vertical fins has a top end point and a bottom end point connected with the fin surface, and the top and bottom end points are opposite to each other. A length of a cross-sectional contour line defined from the top end point to the bottom end point is greater than a perpendicular line length of a perpendicular line defined from the top end point to the fin surface.

Abstract: A two-phase immersion-type heat dissipation structure having a porous structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, a plurality of fins, and a reinforcement frame. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fins are integrally formed on the fin surface. A porous structure is covered onto at least one portion of the fin surface and at least one portion of the plurality of fins, and has a porosity of from 10% to 50% and a thickness that is from 0.1 mm to 1 mm. The reinforcement frame is bonded to the heat dissipation substrate and surrounds another one portion of the plurality of fins.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A heat dissipation structure having a heat pipe is provided. The heat dissipation structure includes a heat dissipation base, a plurality of fins, at least one heat pipe, and at least a first heat dissipation contact material and a second heat dissipation contact material that are different from one another. The heat dissipation base has a first and a second heat dissipation surface opposite to each other. The second heat dissipation surface is connected to the fins. At least one recessed trough is concavely formed on the first heat dissipation surface. The at least one heat pipe is located in the at least one recessed trough. The first and the second heat dissipation contact material are filled in the at least one recessed trough. A melting point of the second heat dissipation contact material is smaller than a melting point of the first heat dissipation contact material.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: An immersion-type heat dissipation structure having high density heat dissipation fins is provided, which includes a heat dissipation substrate and the plurality of sheet-like heat dissipation fins. A thickness of the heat dissipation substrate is from 2 mm to 6 mm, and a bottom surface of the heat dissipation substrate contacts a heating element immersed in a two-phase coolant. The sheet-like heat dissipation fins are integrally formed on an upper surface of the heat dissipation substrate and arranged in high density. A length, a width, and a height of at least one of the sheet-like heat dissipation fins are from 60 mm to 120 mm, from 0.1 mm to 0.5 mm, and from 3 mm to 10 mm, respectively. Further, a distance between at least two of the sheet-like heat dissipation fins that are arranged in parallel to each other is from 0.1 mm to 0.5 mm.

Abstract: A two-phase immersion-type heat dissipation structure having high density heat dissipation fins is provided. The two-phase immersion-type heat dissipation structure having high density heat dissipation fins includes a heat dissipation substrate, a plurality of sheet-like heat dissipation fins, and a reinforcement structure. A bottom surface of the heat dissipation substrate is in contact with a heating element immersed in a two-phase coolant. The plurality of sheet-like heat dissipation fins are integrally formed on an upper surface of the heat dissipation substrate and arranged in high density. An angle between at least one of the sheet-like heat dissipation fins and the upper surface of the heat dissipation substrate is from 60° to 120°. At least one of the sheet-like heat dissipation fins has a length from 50 mm to 120 mm, a width from 0.1 mm to 0.35 mm, and a height from 2 mm to 8 mm.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: A computing device obtains a video and obtains a target facial image, where the target facial image comprises a target face to be edited. The computing device determines a target facial feature vector from the target facial image to be edited. For each of a plurality of frames in the video, the computing device is further configured to: identify facial regions of individuals depicted in the video, generate candidate facial feature vectors for each of the identified facial regions, compare each of the candidate facial feature vectors to the target facial feature vector, and apply a mask effect to facial regions of corresponding facial feature vectors based on the comparison to generate an edited video.

Abstract: A method of preparing a self-healing composition is disclosed, the method including following steps. An isocyanate solution, a dihydric alcohol solution, and a metal salt solution are provided. The dihydric alcohol has heterocyclic structures. The isocyanate solution and the dihydric alcohol solution are mixed, causing the isocyanate and the dihydric alcohol polymerize to form a polymer precursor. The polymer precursor includes a hard segment and a soft segment. The hard segment includes urethane groups, the soft segment includes heterocyclic structures. The polymer precursor and the metal salt solution are mixed, causing the heterocyclic structures and metal ions to undergo a chelation reaction to form a coordination complex, thereby forming the self-healing composition. A self-healing composition prepared by the method, and self-healing film using the self-healing composition are also disclosed.

Abstract: A computing device obtains a video and obtains a target facial image, where the target facial image comprises a target face to be edited. The computing device determines a target facial feature vector from the target facial image to be edited. For each of a plurality of frames in the video, the computing device is further configured to: identify facial regions of individuals depicted in the video, generate candidate facial feature vectors for each of the identified facial regions, compare each of the candidate facial feature vectors to the target facial feature vector, and apply a mask effect to facial regions of corresponding facial feature vectors based on the comparison to generate an edited video.

Abstract: A computing device obtains a video, generates a user interface displaying a plurality of facial effects, and obtains selection of one or more facial effects displayed in the user interface. A target facial image is obtained, where the target facial image comprises a target face to be edited. The computing device determines a target facial feature vector from the target facial image to be edited. For each of a plurality of frames in the video, the computing device identifies facial regions of individuals depicted in the video, generates candidate facial feature vectors for each of the identified facial regions, compares each of the candidate facial feature vectors to the target facial feature vector, and applies one or more facial effects to facial regions based on the comparison to generate an edited video.

Abstract: A method of preparing a self-healing composition is disclosed, the method including following steps. An isocyanate solution, a dihydric alcohol solution, and a metal salt solution are provided. The dihydric alcohol has heterocyclic structures. The isocyanate solution and the dihydric alcohol solution are mixed, causing the isocyanate and the dihydric alcohol polymerize to form a polymer precursor. The polymer precursor includes a hard segment and a soft segment. The hard segment includes urethane groups, the soft segment includes heterocyclic structures. The polymer precursor and the metal salt solution are mixed, causing the heterocyclic structures and metal ions to undergo a chelation reaction to form a coordination complex, thereby forming the self-healing composition. A self-healing composition prepared by the method, and self-healing film using the self-healing composition are also disclosed.

Abstract: A computing device obtains a video, generates a user interface displaying a plurality of facial effects, and obtains selection of one or more facial effects displayed in the user interface. A target facial image is obtained, where the target facial image comprises a target face to be edited. The computing device determines a target facial feature vector from the target facial image to be edited. For each of a plurality of frames in the video, the computing device identifies facial regions of individuals depicted in the video, generates candidate facial feature vectors for each of the identified facial regions, compares each of the candidate facial feature vectors to the target facial feature vector, and applies one or more facial effects to facial regions based on the comparison to generate an edited video.

Abstract: A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.

Abstract: A solar cell includes an N-type silicon substrate, a P-type doped region, an anti-reflective layer, an n+ back surface field (BSF), aluminum electrodes, aluminum doped regions, and a backside electrode. The N-type silicon substrate has a first surface and a second surface opposite to the first surface. The P-type doped region is formed in the first surface of the N-type silicon substrate. The anti-reflective layer is formed on the P-type doped region. The aluminum electrodes are formed on the P-type doped region, and the aluminum doped regions are formed in the P-type doped region under the aluminum electrodes, wherein the aluminum doped regions are in direct contact with the aluminum electrodes. The n+ BSF is formed in the second surface of the N-type silicon substrate, and the backside electrode is formed on the second surface of the N-type silicon substrate.

Abstract: A vehicle tire comprises first and second bead cores spaced apart from each other, a first casing layer wrapped around the bead cores, a second casing layer wrapped around the bead cores, and a tread layer. The first casing layer has first edge sections that overlap with each other at a zenith of the tire and terminate at first edges on opposing sides of the zenith. The second casing layer has second edge sections that do not overlap with each other and that terminate at second edges that are each substantially aligned with one of the first edges. The first and second casing layers are each made of a single unidirectional ply that are in different directions to each other. The sidewall regions and the zenith comprise four plies of casing layers throughout the tire. The tire can further include first and second sidewall reinforcements (e.g., rubber strips) positioned in the first and second sidewall regions.

Abstract: A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.

Abstract: A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.