Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; performing an in-situ doping process to form a first fluorine-containing layer on the buffer layer; forming a barrier layer on the first fluorine-containing layer; forming a second fluorine-containing layer on the barrier layer; forming a gate electrode on the second fluorine-containing layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; performing an in-situ doping process to form a first fluorine-containing layer on the buffer layer; forming a barrier layer on the first fluorine-containing layer; forming a second fluorine-containing layer on the barrier layer; forming a gate electrode on the second fluorine-containing layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: An operating device for natural language input is disclosed. A user can express its own request to the operating device by inputting natural language, then a processor determines format of natural language, if the natural language is voice format, a voice identification cell transforms it into word data and transmits to a natural language analysis unit; if the natural language is word or character identification format, the natural language analysis unit directly analyzes sentence type and issues a instruction accordingly, and then, an executive interface is to find out a matched equipment end to transmit the instruction for operating in real time, such design can respond to equipment end as required by the user so as to achieve a best man-machine communicating channel.