Abstract: A transparent conductive laminate includes a transparent substrate, a first transparent conductive film formed on the transparent substrate, and a second transparent conductive film formed on a surface of the first transparent conductive film opposite to the transparent substrate. The first transparent conductive film includes a material selected from an oxide of indium, an oxide of zinc, an oxide of tin, and combinations thereof. The second transparent conductive film includes diindium trioxide (In2O3) and titanium dioxide (TiO2).

Abstract: A transparent conductive laminate for a semiconductor device includes a substrate, first and second refracting films, and a transparent conductive film formed on the second refracting film and having a pattern defined by etched and non-etched regions. The optical thicknesses of the first and second refracting films are controlled to reduce a difference between CIE b* color values produced in the etched and non-etched regions. The CIE b* color values are smaller than 1.15, and the differential value therebetween is less than 0.35 so that the pattern of the transparent conductive film can be obscured or hidden, thereby improving color homogeneity. A method of improving color homogeneity of the laminate is also disclosed.