Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A process for making surface mountable electrical devices includes the steps of laminating two PTC sheets, two inner metal foil sheets, and two outer metal foil sheets to form a laminate such that the inner metal foil sheets are sandwiched between the PTC sheets and overlap each other and that the PTC sheets are bonded to each other, forming patterns of slits in the outer metal foil sheets, forming bores in the laminate along cutting lines, forming conductive transverse layers in interiors of the bores, and cutting the laminate along the cutting lines.

Abstract: A surface mountable electrical devices includes a laminate body having a plurality of stacked PTC sheets, two overlapping metal foil sheets sandwiched between two adjacent ones of the PTC sheets, a conductive first electrode layer, a conductive second electrode layer spaced apart from the first electrode layer, and a conductive third electrode layer. The two adjacent ones of the PTC sheets have contact faces with inlaid portions respectively inlaid with the metal foil sheets and non-inlaid portions bonded to each other. At least a conductive transverse layer interconnects the first and third electrode layers and the metal foil sheets.

Abstract: A surface mountable electrical devices includes a PTC resistive element having opposite first and second surfaces and lateral faces interconnecting the first and second surfaces, spaced apart first and third electrode layers formed on the first surface, a second electrode layer formed on the second surface, and a conductive layer. Each two adjacent lateral faces defines a corner that has a terraced face. The conductive layer has a first lateral segment formed on the third electrode layer, a second lateral segment formed on the second electrode layer, and a transverse segment formed on the terraced face of one of the corners and having a terraced cross-section.