Patents by Inventor Chun-Te HO
Chun-Te HO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11901554Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.Type: GrantFiled: June 15, 2022Date of Patent: February 13, 2024Assignee: National Tsing Hua UniversityInventors: Tri-Rung Yew, Kai-Wei Lan, Chun-Te Ho, Chia-Tung Kuo, Tien-Chi Ji, Yi-Ting Lee, Yun-Chen Tsai
-
Patent number: 11894556Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.Type: GrantFiled: April 30, 2020Date of Patent: February 6, 2024Assignee: National Tsing Hua UniversityInventors: Tri-Rung Yew, Kai-Wei Lan, Chun-Te Ho, Chia-Tung Kuo, Tien-Chi Ji, Yi-Ting Lee, Yun-Chen Tsai
-
Publication number: 20220311000Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.Type: ApplicationFiled: June 15, 2022Publication date: September 29, 2022Applicant: National Tsing Hua UniversityInventors: Tri-Rung Yew, Kai-Wei Lan, Chun-Te Ho, Chia-Tung Kuo, Tien-Chi Ji, Yi-Ting Lee, Yun-Chen Tsai
-
Publication number: 20220173042Abstract: An embodiment includes a method. The method includes: forming a first conductive line over a substrate; depositing a first dielectric layer over the first conductive line; depositing a second dielectric layer over the first dielectric layer, the second dielectric layer including a different dielectric material than the first dielectric layer; patterning a via opening in the first dielectric layer and the second dielectric layer, where the first dielectric layer is patterned using first etching process parameters, and the second dielectric layer is patterned using the first etching process parameters; patterning a trench opening in the second dielectric layer; depositing a diffusion barrier layer over a bottom and along sidewalls of the via opening, and over a bottom and along sidewalls of the trench opening; and filling the via opening and the trench opening with a conductive material.Type: ApplicationFiled: February 14, 2022Publication date: June 2, 2022Inventors: Chun-Te Ho, Ming-Chung Liang, Chien-Chih Chiu, Chien-Han Chen
-
Patent number: 11251127Abstract: An embodiment includes a method. The method includes: forming a first conductive line over a substrate; depositing a first dielectric layer over the first conductive line; depositing a second dielectric layer over the first dielectric layer, the second dielectric layer including a different dielectric material than the first dielectric layer; patterning a via opening in the first dielectric layer and the second dielectric layer, where the first dielectric layer is patterned using first etching process parameters, and the second dielectric layer is patterned using the first etching process parameters; patterning a trench opening in the second dielectric layer; depositing a diffusion barrier layer over a bottom and along sidewalls of the via opening, and over a bottom and along sidewalls of the trench opening; and filling the via opening and the trench opening with a conductive material.Type: GrantFiled: December 20, 2019Date of Patent: February 15, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Te Ho, Ming-Chung Liang, Chien-Chih Chiu, Chien-Han Chen
-
Publication number: 20210226208Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.Type: ApplicationFiled: April 30, 2020Publication date: July 22, 2021Applicant: National Tsing Hua UniversityInventors: Tri-Rung Yew, Kai-Wei Lan, Chun-Te Ho, Chia-Tung Kuo, Tien-Chi Ji, Yi-Ting Lee, Yun-Chen Tsai
-
Publication number: 20200126915Abstract: An embodiment includes a method. The method includes: forming a first conductive line over a substrate; depositing a first dielectric layer over the first conductive line; depositing a second dielectric layer over the first dielectric layer, the second dielectric layer including a different dielectric material than the first dielectric layer; patterning a via opening in the first dielectric layer and the second dielectric layer, where the first dielectric layer is patterned using first etching process parameters, and the second dielectric layer is patterned using the first etching process parameters; patterning a trench opening in the second dielectric layer; depositing a diffusion barrier layer over a bottom and along sidewalls of the via opening, and over a bottom and along sidewalls of the trench opening; and filling the via opening and the trench opening with a conductive material.Type: ApplicationFiled: December 20, 2019Publication date: April 23, 2020Inventors: Chun-Te Ho, Ming-Chung Liang, Chien-Chih Chiu, Chien-Han Chen
-
Patent number: 10522468Abstract: An embodiment includes a method. The method includes: forming a first conductive line over a substrate; depositing a first dielectric layer over the first conductive line; depositing a second dielectric layer over the first dielectric layer, the second dielectric layer including a different dielectric material than the first dielectric layer; patterning a via opening in the first dielectric layer and the second dielectric layer, where the first dielectric layer is patterned using first etching process parameters, and the second dielectric layer is patterned using the first etching process parameters; patterning a trench opening in the second dielectric layer; depositing a diffusion barrier layer over a bottom and along sidewalls of the via opening, and over a bottom and along sidewalls of the trench opening; and filling the via opening and the trench opening with a conductive material.Type: GrantFiled: July 31, 2017Date of Patent: December 31, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Te Ho, Ming-Chung Liang, Chien-Chih Chiu, Chien-Han Chen
-
Patent number: 10290535Abstract: Examples of fabricating an integrated circuit device are disclosed herein. In an embodiment, an integrated circuit workpiece is received that includes a conductive interconnect feature. A first Inter-Level Dielectric (ILD) layer is formed on the conductive interconnect feature, and a second ILD layer is formed on the first ILD layer. A hard mask is formed on the second ILD layer. A via recess is etched extending through the first ILD layer, the second ILD layer and the hard mask to expose the conductive interconnect feature. The etching includes providing a passivation agent that reacts with a material of the hard mask to reduce etchant sensitivity.Type: GrantFiled: March 22, 2018Date of Patent: May 14, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Te Ho, Shih-Yu Chang, Da-Wei Lin, Chien-Chih Chiu, Ming-Chung Liang
-
Publication number: 20190035734Abstract: An embodiment includes a method. The method includes: forming a first conductive line over a substrate; depositing a first dielectric layer over the first conductive line; depositing a second dielectric layer over the first dielectric layer, the second dielectric layer including a different dielectric material than the first dielectric layer; patterning a via opening in the first dielectric layer and the second dielectric layer, where the first dielectric layer is patterned using first etching process parameters, and the second dielectric layer is patterned using the first etching process parameters; patterning a trench opening in the second dielectric layer; depositing a diffusion barrier layer over a bottom and along sidewalls of the via opening, and over a bottom and along sidewalls of the trench opening; and filling the via opening and the trench opening with a conductive material.Type: ApplicationFiled: July 31, 2017Publication date: January 31, 2019Inventors: Chun-Te Ho, Ming-Chung Liang, Chien-Chih Chiu, Chien-Han Chen
-
Patent number: 9953863Abstract: A method of forming an interconnect structure is provided. The method includes forming a first dielectric layer, and forming an opening in the first dielectric layer. The method also includes applying a gas to the first dielectric layer adjacent to the opening, where after applying the gas to the first dielectric layer adjacent to the opening, a bottom surface of the opening has been planarized. The method also includes etching the first dielectric layer through the opening to expose a first contact underlying the first dielectric layer, and forming a conductive line in the opening.Type: GrantFiled: October 7, 2016Date of Patent: April 24, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Te Ho, Chien-Chih Chiu, Ming-Chung Liang
-
Publication number: 20180102279Abstract: A method of forming an interconnect structure is provided. The method includes forming a first dielectric layer, and forming an opening in the first dielectric layer. The method also includes applying a gas to the first dielectric layer adjacent to the opening, where after applying the gas to the first dielectric layer adjacent to the opening, a bottom surface of the opening has been planarized. The method also includes etching the first dielectric layer through the opening to expose a first contact underlying the first dielectric layer, and forming a conductive line in the opening.Type: ApplicationFiled: October 7, 2016Publication date: April 12, 2018Inventors: Chun-Te Ho, Chien-Chih Chiu, Ming-Chung Liang
-
Patent number: 9105244Abstract: A panel control apparatus and an operating method thereof are provided, and which includes a scalar and a timing controller. The scalar transmits a present display data for composing a display frame, and determines whether to generate a refresh request signal according to a state of the display frame. The timing controller includes a memory, an over driving unit and a panel self refresh unit. When the refresh request signal is not generated, the over driving unit converts the present display data into an over driving display data according to a previous compression data from the memory. When the refresh request signal is generated, the panel self refresh unit compresses the present display data into a refresh display data, and stores the refresh display data into the memory.Type: GrantFiled: May 16, 2012Date of Patent: August 11, 2015Assignee: HIMAX TECHNOLOGIES LIMITEDInventors: Tung-Ying Wu, Chun-Te Ho
-
Patent number: 8937241Abstract: A self-assembly nano-composite solar cell comprises a substrate, a first electrode layer, a composite absorption layer and a second electrode layer. The first electrode layer is formed on the substrate. The composite absorption layer is formed over the first electrode layer and includes a plurality of vertical nano-pillars, a plurality of gaps each formed between any two adjacent nano-pillars, and a plurality of bismuth sulfide nano-particles filled into the gaps and attached to the nano-pillars. The second electrode layer is formed over the composite absorption layer. Through etching and soaking in solutions, the composite absorption layer with nano-pillars and bismuth sulfide nano-particles is fabricated to form a self-assembly nano-composite solar cell having high power conversion efficiency.Type: GrantFiled: April 27, 2012Date of Patent: January 20, 2015Assignee: National Tsing Hua UniversityInventors: Che-Ning Yeh, Chun-Te Ho, Tri-Rung Yew
-
Publication number: 20130307835Abstract: A panel control apparatus and an operating method thereof are provided, and which includes a scalar and a timing controller. The scalar transmits a present display data for composing a display frame, and determines whether to generate a refresh request signal according to a state of the display frame. The timing controller includes a memory, an over driving unit and a panel self refresh unit. When the refresh request signal is not generated, the over driving unit converts the present display data into an over driving display data according to a previous compression data from the memory. When the refresh request signal is generated, the panel self refresh unit compresses the present display data into a refresh display data, and stores the refresh display data into the memory.Type: ApplicationFiled: May 16, 2012Publication date: November 21, 2013Applicant: HIMAX TECHNOLOGIES LIMITEDInventors: Tung-Ying Wu, Chun-Te Ho
-
Publication number: 20130284268Abstract: A self-assembly nano-composite solar cell comprises a substrate, a first electrode layer, a composite absorption layer and a second electrode layer. The first electrode layer is formed on the substrate. The composite absorption layer is formed over the first electrode layer and includes a plurality of vertical nano-pillars, a plurality of gaps each formed between any two adjacent nano-pillars, and a plurality of bismuth sulfide nano-particles filled into the gaps and attached to the nano-pillars. The second electrode layer is formed over the composite absorption layer. Through etching and soaking in solutions, the composite absorption layer with nano-pillars and bismuth sulfide nano-particles is fabricated to form a self-assembly nano-composite solar cell having high power conversion efficiency.Type: ApplicationFiled: April 27, 2012Publication date: October 31, 2013Inventors: Che-Ning YEH, Chun-Te HO, Tri-Rung YEW