Abstract: A quantum dot oil-based ink is provided. The quantum dot oil-based ink includes a quantum dot material, a dispersing solvent, a viscosity modifier, and a surface tension modifying solution. The dispersing solvent includes a linear alkane having 6 to 14 carbon atoms. The viscosity modifier includes an aromatic hydrocarbon having 10 to 18 carbon atoms or a linear olefin having 16 to 20 carbon atoms. The surface tension modifying solution includes a hydrophobic polymer material and a nonpolar solvent.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A CMP apparatus therefor is provided. First, a substrate including a semiconductor structure, a liner layer over the semiconductor structure and a metal layer over the liner layer is provided. Next, a metal polishing step is performed to polish the metal layer until a portion of the liner layer is exposed. Next, a buffing step is performed to remove any contaminants from the surface of the metal layer. Thereafter, a liner CMP step is performed to polish the liner layer.

Abstract: A multi-step anneal method is provided. First, a substrate is provided. Then, a dielectric layer comprising a damascene structure is formed over the substrate, and a barrier/seed layer is formed over the damascene structure. Next, a metal layer is formed over the barrier layer, and performing a first anneal step in-situ to anneal the substrate at a first temperature range with a first environment. Thereafter, a metal chemical mechanical polish (CMP) step is performed to remove a portion of the metal layer until a portion of the barrier layer is exposed. Then, a second anneal step is performed to anneal the substrate at a second temperature range with a second environment.

Abstract: An apparatus of chemical mechanical polishing has a polishing machine, a first thickness metrology and a second thickness metrology. The first thickness metrology is connected with the polishing machine, and the second thickness metrology is connected with the polishing machine. Since the thickness of the first material layer and the second material layer after polishing process can be separately measured by the first thickness metrology and the second thickness metrology in-situ, the difference of film thickness between wafers can be reduced.

Abstract: A CMP process and a CMP apparatus therefor are provided. First, a substrate including a semiconductor structure, a liner layer over the semiconductor structure and a metal layer over the liner layer is provided. Next, a metal polishing step is performed to polish the metal layer until a portion of the liner layer is exposed. Next, a buffing step is performed to remove any contaminants from the surface of the metal layer. Thereafter, a liner CMP step is performed to polish the liner layer.

Abstract: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying a corrosion inhibitor, and a fourth slurry supply reservoir for supplying an oxidizer.

Abstract: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying a corrosion inhibitor, and a fourth slurry supply reservoir for supplying an oxidizer.