Abstract: Disclosed is a manufacturing method of a composite panel, comprising: a providing step of providing a flexible sheet; an attaching step of forming a lamellar structure by attaching at least one lamellar board to cover the flexible sheet; and a cutting step of cutting a plurality of longitudinal grooves in the lamellar structure layer to form a plurality of lamellar strips, thereby obtaining the composite panel that is able to be bent laterally into a curved configuration.

Abstract: Disclosed is a non-interlock assembled flooring system, comprising: a base sheet layer and a surface slat layer disposed on the base sheet layer, wherein the surface slat layer includes a plurality of wood floor slats arranged side-by-side in a widthwise direction, the wood floor slats are separated by a plurality of cut grooves serving as expansion joints, and the surface slat layer has a continuous wood-grain surface formed by upper surfaces of the wood floor slats.

Abstract: Disclosed is a manufacturing method of a composite panel, comprising: a providing step of providing a flexible sheet; an attaching step of forming a lamellar structure by attaching at least one lamellar board to cover the flexible sheet; and a cutting step of cutting a plurality of longitudinal grooves in the lamellar structure layer to form a plurality of lamellar strips, thereby obtaining the composite panel that is able to be bent laterally into a curved configuration.

Abstract: The present disclosure relates to a semiconductor structure. The semiconductor structure includes a semiconductor-on-insulator (SOI) substrate having a bottom substrate, a buried oxide layer disposed on the bottom substrate, and a semiconductor layer disposed on the buried oxide layer. The semiconductor structure further includes a doped layer embedded in the semiconductor layer and above the buried oxide layer, and a contact structure extending into the semiconductor layer from the top surface of the semiconductor layer. The contact structure is electrically connected to the doped layer.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a semiconductor layer formed on the substrate. The semiconductor structure includes an isolation structure through the semiconductor layer, and the isolation structure has an opening with a first width, and the isolation structure has a vacuum gap. The semiconductor structure also includes a contact plug structure through the semiconductor layer, and the contact plug structure has an opening with a second width, and the second width is greater than the first width.

Abstract: The present disclosure relates to a semiconductor structure. The semiconductor structure includes a semiconductor-on-insulator (SOI) substrate having a bottom substrate, a buried oxide layer disposed on the bottom substrate, and a semiconductor layer disposed on the buried oxide layer. The semiconductor structure further includes a doped layer embedded in the semiconductor layer and above the buried oxide layer, and a contact structure extending into the semiconductor layer from the top surface of the semiconductor layer. The contact structure is electrically connected to the doped layer.

Abstract: The present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor on an insulator (SOI) substrate having a bottom substrate, a buried oxide layer on the bottom substrate, and a semiconductor layer on the buried oxide layer. The semiconductor device also includes a first dielectric layer disposed on the semiconductor layer, a first contact structure extending from a top surface of the first dielectric layer through the semiconductor layer and the buried oxide layer and contacting the bottom substrate, and a first trench extending into the semiconductor layer. A width of the first trench is smaller than a width of the first contact structure. The first dielectric layer seals the first trench at or near the top of the first trench to form a vacuum gap.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a semiconductor layer formed on the substrate. The semiconductor structure includes an isolation structure through the semiconductor layer, and the isolation structure has an opening with a first width, and the isolation structure has a vacuum gap. The semiconductor structure also includes a contact plug structure through the semiconductor layer, and the contact plug structure has an opening with a second width, and the second width is greater than the first width.

Abstract: The present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor on an insulator (SOI) substrate having a bottom substrate, a buried oxide layer on the bottom substrate, and a semiconductor layer on the buried oxide layer. The semiconductor device also includes a first dielectric layer disposed on the semiconductor layer, a first contact structure extending from a top surface of the first dielectric layer through the semiconductor layer and the buried oxide layer and contacting the bottom substrate, and a first trench extending into the semiconductor layer. A width of the first trench is smaller than a width of the first contact structure. The first dielectric layer seals the first trench at or near the top of the first trench to form a vacuum gap.

Abstract: A structure of composite board includes a board, a first covering layer, and a second covering layer. The board has an upper surface and a lower surface opposite to the upper surface, and the upper surface forms a plurality of grooves that is substantially parallel to each other. The first covering layer has an upper surface and a lower surface opposite to the upper surface, and the upper surface is bonded to the lower surface of the board. The second covering layer has an upper surface and a lower surface opposite to the upper surface, and the upper surface is bonded to the lower surface of the first covering layer. As such, the composite board, when attached to a column, ensures the advantageous characteristics of water resistance, sound isolation, thermal isolation, and beautiful appearance.