Patents by Inventor Chun Tong
Chun Tong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11973302Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.Type: GrantFiled: February 20, 2023Date of Patent: April 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin Louis Chang, Henry Tong Yee Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
-
Publication number: 20240128208Abstract: A semiconductor package includes a first integrated circuit (IC) structure. The first IC structure includes: a first body having a first primary surface and a first secondary surface, the first primary surface being substantially perpendicular to the first secondary surface; and an interconnect structure. The interconnect structure includes a primary redistribution layer (RDL) over the first primary surface, the primary RDL having a second secondary surface that is aligned with the first secondary surface of the first body, wherein the first secondary surface and the second secondary surface jointly form a secondary plane. The primary RDL further comprises a first conductive element exposed through the second secondary surface of the primary RDL; and a secondary RDL over the secondary plane, wherein the secondary RDL is electrically connected to the first conductive element of the primary RDL and other conductive elements of the first body exposed through the first secondary plane.Type: ApplicationFiled: September 21, 2023Publication date: April 18, 2024Inventors: HO-MING TONG, CHAO-CHUN LU
-
Publication number: 20240128146Abstract: The present application discloses a semiconductor package which includes a processor die powered by either a front-side or a backside power delivery network, a plurality of memory dies and control dies stacked over the processor die, a plurality of high-thermal-conductivity (HTC) interconnects formed on, located between and/or placed side-by-side with the dies, a HTC substrate carrying all the dies, a HTC structural member, and a HTC heat spreader/heatsink with the dies and the HTC heat spreader thermally coupled to other HTC components in the semiconductor package. The semiconductor components can be configured to go beyond the traditional single-sided interconnection and cooling topologies to enable dual-or multi-sided cooling, power supply, and signaling.Type: ApplicationFiled: September 26, 2023Publication date: April 18, 2024Inventors: HO-MING TONG, CHAO-CHUN LU
-
Publication number: 20240128414Abstract: A light-emitting device is provided. The light-emitting device includes a light-emitting unit and a light-conversion structure disposed on the light-emitting unit, wherein the light-conversion structure includes a quantum dot layer and an etching blocking layer disposed on one of the surfaces of the quantum dot layer.Type: ApplicationFiled: October 6, 2023Publication date: April 18, 2024Inventors: Shiou-Yi KUO, Chin-Hung LUNG, Yu-Chun LEE, Hung-Chun TONG
-
Publication number: 20240128150Abstract: A semiconductor package is provided, which includes a processor die powered by either a front-side or a backside power delivery network, a plurality of memory dies and control dies stacked over the processor die, a plurality of high-thermal-conductivity interconnects located between and/or placed side-by-side with the dies, a substrate carrying all the dies with the substrate having a first cavity allowing a liquid to pass through, and a cold plate disposed over and in direct thermal contact with the top dies with the cold plate having a second cavity configured to connect to the first cavity and allowing the liquid to flow between the first and second cavities. This semiconductor package can be configured to go beyond the traditional single-sided interconnection and cooling topologies to enable dual- or multi-sided cooling, power supply, and signaling.Type: ApplicationFiled: September 25, 2023Publication date: April 18, 2024Inventors: HO-MING TONG, CHAO-CHUN LU
-
Publication number: 20240124350Abstract: A quantum dot composite structure and a method for forming the same are provided. The quantum dot composite structure includes: a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and an inorganic protective layer disposed on the glass particle and covering the exposed surface.Type: ApplicationFiled: October 13, 2023Publication date: April 18, 2024Inventors: Ching LIU, Wen-Tse HUANG, Ru-Shi LIU, Pei Cong YAN, Chai-Chun HSIEH, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
-
Publication number: 20230279291Abstract: A quantum dot is disclosed. The quantum dot includes: a core, a first shell, and a second shell. The first shell is discontinuously distributed around the core surface. The second shell is between the core and the first shell and encapsulates the core. The second shell has an irregularly shaped outer surface.Type: ApplicationFiled: July 29, 2022Publication date: September 7, 2023Inventors: Pei Cong YAN, Chai Chun HSIEH, Huei Ping WANG, Hung-Chun TONG, Yu-Chun LEE
-
Patent number: 11652193Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.Type: GrantFiled: October 29, 2020Date of Patent: May 16, 2023Assignee: Lextar Electronics CorporationInventors: Yi-Ting Tsai, Hung-Chia Wang, Chia-Chun Hsieh, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
-
Patent number: 11469352Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.Type: GrantFiled: November 28, 2019Date of Patent: October 11, 2022Assignee: Lextar Electronics CorporationInventors: Fu-Hsin Chen, Yu-Chun Lee, Hung-Chun Tong, Tzong-Liang Tsai
-
Publication number: 20220291551Abstract: A wavelength conversion material comprises a luminous core and a covering layer. The luminous core comprises a quantum dot or a fluorescent powder. The covering layer covers the luminous core. The covering layer is an amorphous material, and an outer surface of the covering layer has at least one sharp corner.Type: ApplicationFiled: February 14, 2022Publication date: September 15, 2022Inventors: Yi-Ting TSAI, Hung-Chia WANG, Chia-Chun HSIEH, Pei-Cong YAN, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
-
Publication number: 20220254697Abstract: A semiconductor device includes an ultra-thick metal (UTM) structure. The semiconductor device includes a passivation layer including a first passivation oxide. The first passivation oxide includes an unbias film and a first bias film, where the unbias film is on portions of the UTM structure and on portions of a layer on which the UTM structure is formed, and the first bias film is on the unbias film. The passivation layer includes a second passivation oxide consisting of a second bias film, the second bias film being on the first bias film. The passivation layer includes a third passivation oxide consisting of a third bias film, the third bias film being on the second bias film.Type: ApplicationFiled: February 11, 2021Publication date: August 11, 2022Inventors: Li Chun LIU, Chun Tong WANG, Chih Hung WANG, Ching Feng LEE, Yu-Lung YEH
-
Patent number: 11355675Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.Type: GrantFiled: November 18, 2019Date of Patent: June 7, 2022Assignee: Lextar Electronics CorporationInventors: Chang-Zhi Zhong, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
-
Publication number: 20220115257Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.Type: ApplicationFiled: December 17, 2021Publication date: April 14, 2022Inventors: Fu-Hsin Chen, Yu-Chun Lee, Hung-Chun Tong, Tzong-Liang Tsai
-
Patent number: 11302678Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.Type: GrantFiled: November 28, 2019Date of Patent: April 12, 2022Assignee: Lextar Electronics CorporationInventors: Hung-Chun Tong, Fu-Hsin Chen, Wen-Wan Tai, Yu-Chun Lee, Tzong-Liang Tsai
-
Patent number: 11294238Abstract: A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.Type: GrantFiled: October 29, 2020Date of Patent: April 5, 2022Assignee: Lextar Electronics CorporationInventors: Kiet Tuong Ly, Fu-Hsin Chen, Yi-Ting Tsai, Hung-Chia Wang, Chia-Chun Hsieh, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
-
Patent number: 11245056Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.Type: GrantFiled: November 28, 2019Date of Patent: February 8, 2022Assignee: Lextar Electronics CorporationInventors: Chang-Zhi Zhong, Hung-Chia Wang, Hung-Chun Tong, Yu-Chun Lee, Tzong-Liang Tsai
-
Publication number: 20220029067Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.Type: ApplicationFiled: October 29, 2020Publication date: January 27, 2022Inventors: Yi-Ting TSAI, Hung-Chia WANG, Chia-Chun HSIEH, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
-
Publication number: 20210288227Abstract: The wavelength conversion material includes a general formula (I) MmAaBbCcDdEe:ESxREy and satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements O, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.Type: ApplicationFiled: September 26, 2020Publication date: September 16, 2021Inventors: Yi-Ting TSAI, Hung-Chia WANG, Chia-Chun HSIEH, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
-
Publication number: 20210167257Abstract: A light conversion material includes a general formula and complies with a condition. The general formula is MmAaCcEe:ESxREy. M is at least one element selected from a group, and 2?m?3. A is at least one element selected from a group, and 0.01?a?1. C is at least one element selected from a group, and 1?c?9, E is at least one element selected from a group, and 5?e?7. ES is at least one element selected from a group, and 0?x?3. RE is at least one element selected from a group, and 0?y?3. The condition (2) is m+x+y=3.Type: ApplicationFiled: September 7, 2020Publication date: June 3, 2021Inventors: Yi-Ting TSAI, Hung-Chia WANG, Hung-Chun TONG, Yu-Chun LEE, Tzong-Liang TSAI
-
Publication number: 20210143133Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.Type: ApplicationFiled: November 28, 2019Publication date: May 13, 2021Inventors: Hung-Chun TONG, Fu-Hsin CHEN, Wen-Wan TAI, Yu-Chun LEE, Tzong-Liang TSAI