Abstract: A semiconductor device includes an ultra-thick metal (UTM) structure. The semiconductor device includes a passivation layer including a first passivation oxide. The first passivation oxide includes an unbias film and a first bias film, where the unbias film is on portions of the UTM structure and on portions of a layer on which the UTM structure is formed, and the first bias film is on the unbias film. The passivation layer includes a second passivation oxide consisting of a second bias film, the second bias film being on the first bias film. The passivation layer includes a third passivation oxide consisting of a third bias film, the third bias film being on the second bias film.