Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: An electrochemical biosensor strip has a base, an electrode system, an optional spacer and a cover. The electrode system is laid on the base. The spacer is laid on the electrode system and exposes a portion of the electrode system for electrical connection with a meter and a different portion of the electrode system for application of a test reagent. The cover is covered on the spacer to form a cavity. Between the test reagent and the base, a hydrophilic layer is laid between them for increasing the binding effect of the test reagent on the base. The hydrophilic layer is laid on the area excluding from the electrode system and laid on the electrode system about 50% to 0% of the electrode system corresponding to the test reagent. The hydrophilic layer will not interfere with signal transmission of the electrode system so the test is more accurate.