Abstract: A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors, a plurality of deep trench isolation (DTI) structures, and a plurality of isolation structures. The transistors are over a front-side surface of the semiconductor substrate. The DTI structures extend a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate. The isolation structures extend a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. From a plan view, each of the plurality of isolation structures has a triangular profile at the backside surface of the semiconductor substrate.

Abstract: A semiconductor device includes a first wafer and a second wafer. The semiconductor device includes a seal ring structure comprising a first metal structure in a body of the first wafer, a second metal structure in the body of the first wafer, a third metal structure in a body of the second wafer, and a metal bonding structure including a first set of metal elements coupling the first metal structure and the third metal structure through an interface between the first wafer and the second wafer, and a second set of metal elements coupling the second metal structure and the third metal structure through the interface between the first wafer and the second wafer.

Abstract: A method of making a semiconductor structure includes forming a pixel array region on a substrate. The method further includes forming a first seal ring region on the substrate, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region includes a first seal ring. The method further includes forming a first isolation feature in the first seal ring region, wherein forming the first isolation feature includes filling a first opening with a dielectric material, wherein the first isolation feature is a continuous structure surrounding the pixel array region. The method further includes forming a second isolation feature between the first isolation feature and the pixel array region, wherein forming the second isolation feature includes filling a second opening with the dielectric material.

Abstract: A method for manufacturing a large-particle-size styrene butadiene latex includes mixing a first styrene-butadiene latex with a polyacrylate agglomerating agent and an inorganic salt solution to allow the first styrene-butadiene latex to undergo an agglomeration process, so as to obtain a second styrene-butadiene latex that has a particle size larger than that of the first styrene-butadiene latex. The polyacrylate agglomerating agent is present in an amount ranging from 0.1 parts by weight to 1 part by weight and an inorganic salt in the inorganic salt solution is present in an amount of 0.25 parts by weight, based on 100 parts by weight of the first styrene-butadiene latex. The first styrene-butadiene latex is stable and not susceptible to emulsion breaking during the agglomeration process.

Abstract: A method of manufacturing a transistor structure includes forming a plurality of trenches in a substrate, lining the plurality of trenches with a dielectric material, forming first and second substrate regions at opposite sides of the plurality of trenches, and filling the plurality of trenches with a conductive material. The plurality of trenches includes first and second trenches aligned between the first and second substrate regions, and filling the plurality of trenches with the conductive material includes the conductive material extending continuously between the first and second trenches.

Abstract: A semiconductor device includes a first wafer comprising a first portion of a seal ring structure within a body of the first wafer. The semiconductor device includes a second wafer comprising a second portion of the seal ring structure within a body of the second wafer. The second wafer is affixed to the first wafer such that the second portion of the seal ring structure is on the first portion of the seal ring structure. The semiconductor device includes a trench structure comprising a first trench in the first wafer and a second trench in the second wafer, where the first trench and the second trench are on a same side of the seal ring structure.

Abstract: A wafer treatment system is provided. The wafer treatment system includes a wafer treatment chamber defining a treatment area within which a wafer is treated. The wafer treatment system includes a gas injection system. The gas injection system includes a gas injector configured to inject a first gas, used for treatment of the wafer, into the treatment area. A first gas tube is configured to conduct the first gas at a first temperature to the gas injector. The gas injection system includes a heating enclosure enclosing the gas injector. A second gas tube is configured to conduct a heated gas to the heating enclosure to increase an enclosure temperature at the heating enclosure to a second enclosure temperature. A temperature of the first gas is increased in the gas injector from the first temperature to a second temperature due to the second enclosure temperature at the heating enclosure.

Abstract: A wafer treatment system is provided. The wafer treatment system includes a wafer treatment chamber defining a treatment area within which a wafer is treated. The wafer treatment system includes a gas injection system. The gas injection system includes a gas injector configured to inject a first gas, used for treatment of the wafer, into the treatment area. A first gas tube is configured to conduct the first gas at a first temperature to the gas injector. The gas injection system includes a heating enclosure enclosing the gas injector. A second gas tube is configured to conduct a heated gas to the heating enclosure to increase an enclosure temperature at the heating enclosure to a second enclosure temperature. A temperature of the first gas is increased in the gas injector from the first temperature to a second temperature due to the second enclosure temperature at the heating enclosure.

Abstract: Provided is a light-emitting device including a substrate, a first light-emitting unit, a second light-emitting unit, a third light-emitting unit, a blue light absorbing photoresist layer and an atomic layer deposition (ALD) gas barrier layer. The first light-emitting unit includes a first micro LED device and a first light conversion layer wrapping the first micro LED device, the second light-emitting unit includes a second micro LED device and a second light conversion layer wrapping the second micro LED device, and the third light-emitting unit includes a third micro LED device and the third light conversion layer wrapping the third micro LED device. The blue light absorbing photoresist layer covers the first and second light-emitting units, while exposing the third light-emitting unit. The ALD gas barrier layer wraps the first, second, and third light-emitting units, and the blue light absorbing photoresist layer.

Abstract: A backlight module and a display apparatus are provided. The backlight module includes a quantum fluorescent film. The quantum fluorescent film includes a light conversion layer. The light conversion layer includes a resin material, a plurality of quantum dots and a plurality of phosphors. The plurality of quantum dots and the plurality of phosphors are dispersed in the resin material.

Abstract: Quantum dot is a semiconductor nanomaterial. The quantum dot includes a core constituted of InP, a first shell constituted of ZnSe, a second shell constituted of ZnS, and a gradient alloy intermediate layer. The core is wrapped by the first shell. The first shell is wrapped by the second shell, and the first and second shells have different materials. The gradient alloy intermediate layer is between the core and the first shell. The gradient layer includes an alloy constituted of In, P, Zn and Se. A content of the In and P gradually decreases from the core to the first shell. A content of the Zn and Se gradually increases from the core to the first shell. A particle size of the quantum dot is greater than or equal to 11 nm. The quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.

Abstract: A wafer treatment system is provided. The wafer treatment system includes a wafer treatment chamber defining a treatment area within which a wafer is treated. The wafer treatment system includes a gas injection system. The gas injection system includes a gas injector configured to inject a first gas, used for treatment of the wafer, into the treatment area. A first gas tube is configured to conduct the first gas at a first temperature to the gas injector. The gas injection system includes a heating enclosure enclosing the gas injector. A second gas tube is configured to conduct a heated gas to the heating enclosure to increase an enclosure temperature at the heating enclosure to a second enclosure temperature. A temperature of the first gas is increased in the gas injector from the first temperature to a second temperature due to the second enclosure temperature at the heating enclosure.

Abstract: Provided is a backlight module including a light source, a light guide plate, and a composite color-conversion layer. The light source emits a blue light. The light guide plate is optically coupled to the light source and the blue light transmits through the light guide plate. The composite color-conversion layer is disposed on the light guide plate. The composite color-conversion layer includes at least three different populations of quantum dots. The at least three different populations of quantum dots at least include a plurality of cyan quantum dots or a plurality of yellow quantum dots.

Abstract: Quantum dot is a semiconductor nanomaterial. The quantum dot includes a core constituted of InP, a first shell constituted of ZnSe, a second shell constituted of ZnS, and a gradient alloy intermediate layer. The core is wrapped by the first shell. The first shell is wrapped by the second shell, and the first and second shells have different materials. The gradient alloy intermediate layer is between the core and the first shell. The gradient layer includes an alloy constituted of In, P, Zn and Se. A content of the In and P gradually decreases from the core to the first shell. A content of the Zn and Se gradually increases from the core to the first shell. A particle size of the quantum dot is greater than or equal to 11 nm. The quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.

Abstract: Provided is a backlight unit including a light source, an encapsulation layer, and a green quantum dot film. The light source emits a blue light. The encapsulation layer encapsulates the light source. The encapsulation layer includes red phosphors and yellow phosphors. The green quantum dot film is disposed above the light source and the encapsulation layer. The blue light is transmitted through the encapsulation layer and the green quantum dot film to generate a white light. A display device including the said backlight unit is also provided.

Abstract: Provided is a backlight module including a light guide plate, a light source and a light conversion layer. The light source is disposed at one side of the light guide plate. The light conversion layer is disposed over the light guide plate. The light conversion layer includes an optical composite material including 0.1 wt % to 15 wt % of a luminescent material and 85 wt % to 99.9 wt % of an acrylate-based polymer. The acrylate-based polymer is prepared from precursors including 5 wt % to 30 wt % of a surfactant having a thiol group.

Abstract: Provided is a backlight module including a light source, a light guide plate, and a light conversion layer. The light source emits light. The light guide plate is optically coupled to the light source and the light transmits through the light guide plate. The light conversion layer is disposed on the light guide plate. The light conversion layer includes a first layer and a second layer. The first layer is adjacent to the light source and includes a plurality of first quantum dots. The second layer is further away from the light source than the first layer and includes a plurality of second quantum dots. An emission wavelength of the plurality of first quantum dots is greater than an emission wavelength of the plurality of second quantum dots.

Abstract: Provided is a backlight module including a light source, a light guide plate, and a composite color-conversion layer. The light source emits a blue light. The light guide plate is optically coupled to the light source and the blue light transmits through the light guide plate. The composite color-conversion layer is disposed on the light guide plate. The composite color-conversion layer includes at least three different populations of quantum dots. The at least three different populations of quantum dots at least include a plurality of cyan quantum dots or a plurality of yellow quantum dots.

Abstract: Provided is a backlight module including a light guide plate, a light source and a light conversion layer. The light source is disposed at one side of the light guide plate. The light conversion layer is disposed over the light guide plate. The light conversion layer includes an optical composite material including 0.1 wt % to 15 wt % of a luminescent material and 85 wt % to 99.9 wt % of a resin material. The resin material includes 5 wt % to 30 wt % of a surfactant having a thiol group.

Abstract: A method for constrained power allocation in a multiple input multiple output (MIMO) system, including: executing a singular value decomposition (SVD) operation upon a channel matrix; obtaining a diagonal matrix, wherein the diagonal matrix is composed of a plurality of local matrixes; and transforming diagonal elements of the diagonal matrix into diagonal elements of a specific diagonal vector from an upper-left corner local matrix and a lower-right corner local matrix, in parallel, simultaneously, and according to a sequence, by using a generalized triangular decomposition.