Abstract: A method for manufacturing a large-particle-size styrene butadiene latex includes mixing a first styrene-butadiene latex with a polyacrylate agglomerating agent and an inorganic salt solution to allow the first styrene-butadiene latex to undergo an agglomeration process, so as to obtain a second styrene-butadiene latex that has a particle size larger than that of the first styrene-butadiene latex. The polyacrylate agglomerating agent is present in an amount ranging from 0.1 parts by weight to 1 part by weight and an inorganic salt in the inorganic salt solution is present in an amount of 0.25 parts by weight, based on 100 parts by weight of the first styrene-butadiene latex. The first styrene-butadiene latex is stable and not susceptible to emulsion breaking during the agglomeration process.

Abstract: A method for a semiconductor manufacturing process includes circulating a solution from a tank using a pump and receiving the solution from the pump at an inlet of a valve. When a manufacturing operation occurs, the solution is directed to a first outlet of the valve that is connected to a nozzle used in the manufacturing operation. When the manufacturing operation is idle, the solution is directed to a second outlet connected to a recirculation path; and recirculated back to the tank via the recirculation path for re-use in the manufacturing operation.

Abstract: In a method of manufacturing a semiconductor device, a hydrophobic solvent as a gas is directed to flow over a bevel region of a wafer. A layer of the hydrophobic solvent is deposited on an upper bevel of the bevel region on top surface of the wafer and on a lower bevel of the bevel region on bottom surface of the wafer. A metal-containing photo resist layer is disposed on an internal region of the top surface of the wafer enclosed by the bevel region. During a subsequent processing operation, a photo resist material of the metal-containing photo resist layer is blocked off inside the top surface of the wafer by the layer of the hydrophobic solvent.

Abstract: A method for manufacturing a semiconductor device includes forming a forming a photoresist layer over a semiconductor substrate and selectively exposing the photoresist layer to actinic radiation. After selectively exposing the photoresist layer to actinic radiation, storing the semiconductor substrate in a semiconductor substrate container under an ambient of extreme dry clean air or inert gas. The method also includes after the storing the semiconductor substrate, performing a first heating of the photoresist layer.

Abstract: A transistor includes: a substrate including an active area; a gate structure penetrating through the active area and including a gate and a gate dielectric layer, in which the gate dielectric layer covers sidewalls and a bottom of the gate; a channel layer located on a side of the gate dielectric layer away from the gate, in which the channel layer includes a metal oxide semiconductor layer, in which the active area includes a first active layer and a second active layer located at two sides of the gate structure, and the first active layer and the second active layer are in contact with the channel layer.

Abstract: A system for manufacturing a semiconductor device comprises an edge coating device. The edge coating device comprises a first stage, a first shielding disk, one or more first openings, one or more second openings, and a resist dispensing module.

Abstract: A solvent recycle system minimizes chemical consumption used in various semiconductor processes. The solvent is recycled from a nozzle bath via the addition of buffer tank to connect the bath and circulation pumps. Improvements to the bath design further maintain solvent cleanness by preventing intrusion of particles and overflow conditions in the bath.

Abstract: A method for manufacturing a semiconductor device includes forming a forming a photoresist layer over a semiconductor substrate and selectively exposing the photoresist layer to actinic radiation. After selectively exposing the photoresist layer to actinic radiation, storing the semiconductor substrate in a semiconductor substrate container under an ambient of extreme dry clean air or inert gas. The method also includes after the storing the semiconductor substrate, performing a first heating of the photoresist layer.

Abstract: In a method of manufacturing a semiconductor device, a hydrophobic solvent as a gas is directed to flow over a bevel region of a wafer. A layer of the hydrophobic solvent is deposited on an upper bevel of the bevel region on top surface of the wafer and on a lower bevel of the bevel region on bottom surface of the wafer. A metal-containing photo resist layer is disposed on an internal region of the top surface of the wafer enclosed by the bevel region. During a subsequent processing operation, a photo resist material of the metal-containing photo resist layer is blocked off inside the top surface of the wafer by the layer of the hydrophobic solvent.

Abstract: A method of operating a wet process apparatus, includes dispensing a solution from a nozzle and directing the solution to a bath through an inlet port. A purge gas is injected into the bath to force flow of the solution from the bath to a buffer tank. A condition of the fluid within the buffer tank is monitored with a sensor. The solution is circulated to a pump and then through a filter before returning the solution to the nozzle. Overflow solution is directed out of the bath via an overflow path to a drain for preventing an overflow condition.

Abstract: A solution dispense system for a semiconductor manufacturing process includes a longer circulation loop in order to minimize the idle section from resist pump to dispense nozzle. A t-valve and control valve are disposed close to the nozzle in order to decrease the idle section and reduce material consumption.

Abstract: A solvent recycle system minimizes chemical consumption used in various semiconductor processes. The solvent is recycled from a nozzle bath via the addition of buffer tank to connect the bath and circulation pumps. Improvements to the bath design further maintain solvent cleanness by preventing intrusion of particles and overflow conditions in the bath.

Abstract: A security system is disclosed. The security system includes a memory and a processor. The memory is configured to store several applications, in which several applications include several relationships. The processor is coupled to the memory, in which the processor is configured to manage several applications according to several relationships and at least one of a time driven method and an event driven method, in which the several relationships include a parent-child relationship, a function-group relationship, and an app-type relationship, to receive several input signals from several sources, and to display a screen picture of the several input signals according to several drawing parameters, and when several applications are running, the processor is further configured to allocate several resources of the security system to several applications according to several weighting values.

Abstract: A virtual hardware management device is provided, which includes a memory and a processing unit. The processing unit is configured for executing the multiple instructions to perform the following operations: when detecting that the load rate is more than the high level threshold, comparing respective priorities of multiple processing flows; selecting at least one of the multiple processing flows to perform at least one of analysis frequency reduction processing, detection reduction processing, or flow pause processing according to a comparing result until the load rate is not more than the high level threshold; and generating respective resource allocation ratio of multiple operators in the multiple processing flows according to respective resource weights of the multiple operators, and using a virtual hardware unit to execute the multiple operators according to the multiple resource allocation ratios.

Abstract: A semiconductor device includes a first dielectric layer, a cobalt-containing conductive feature, a non-cobalt conductive feature, a second dielectric layer, a first tungsten contact feature, a second tungsten contact feature, and a tungsten barrier layer. The cobalt-containing conductive feature is disposed in the first dielectric layer. The non-cobalt conductive feature is disposed in the first dielectric layer, and is spaced apart from the cobalt-containing conductive feature. The second dielectric layer is disposed over the first dielectric layer. The first tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the cobalt-containing conductive feature. The second tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the non-cobalt conductive feature.

Abstract: The present disclosure in various embodiments provides a hardened resist layer that can reduce resist scum defects in a resist layer. In one embodiment, a lithography method is provided. The method includes forming a resist layer over a substrate, performing an exposure process on the resist layer, performing a developing process on the resist layer to form a patterned resist layer having a plurality resist segments, exposing the patterned resist layer to a vacuum ultraviolet (VUV) radiation, and subjecting the resist pattern a de-scum process.

Abstract: A semiconductor device includes a first dielectric layer, a cobalt-containing conductive feature, a non-cobalt conductive feature, a second dielectric layer, a first tungsten contact feature, a second tungsten contact feature, and a tungsten barrier layer. The cobalt-containing conductive feature is disposed in the first dielectric layer. The non-cobalt conductive feature is disposed in the first dielectric layer, and is spaced apart from the cobalt-containing conductive feature. The second dielectric layer is disposed over the first dielectric layer. The first tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the cobalt-containing conductive feature. The second tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the non-cobalt conductive feature.

Abstract: A method for manufacturing a semiconductor device includes forming a forming a photoresist layer over a semiconductor substrate and selectively exposing the photoresist layer to actinic radiation. After selectively exposing the photoresist layer to actinic radiation, storing the semiconductor substrate in a semiconductor substrate container under an ambient of extreme dry clean air or inert gas. The method also includes after the storing the semiconductor substrate, performing a first heating of the photoresist layer.

Abstract: The present invention relates to a 3-D waveguide coupling device capable of two-step coupling and a manufacture method thereof, the 3-D waveguide coupling device comprises: a first substrate, at least one waveguide layer, at least one assisting grating, at least one coupling material layer, and at least one 3-D tapered structure layer, wherein 3-D waveguide coupling device is able to couple the light into the waveguide layer by way of two-step coupling through the 3-D tapered structure layer, the coupling material layer and the assisting grating. Moreover, the light can also be coupled out from the waveguide layer through the assisting grating, the coupling layer, and the 3-D tapered structure. The manufacture method is adapted to fabricate the 3-D waveguide coupling device capable of two-step coupling via the present semiconductor process technology without increasing any other new equipment.

Abstract: An artificial eyelash structure includes a mounting member having a bonding portion for adhering to an eyelid and a bendable portion for enabling the bonding portion to be curved into a smoothly arched shape when bending the bonding portion upwards or downwards, and multiple eyelashes connected with the mounting member. The artificial eyelash structure is prepared by: forming a mounting member from a thin film, and then processing the thin film of the mounting member into a bonding portion and a bendable portion such that the bendable portion enables the bonding portion to be bent upwards or downwards, and then connecting eyelashes with the mounting member.