Patents by Inventor Chun Wei Lin

Chun Wei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250072294
    Abstract: A method for fabricating semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) stack on a substrate, performing an etching process to remove the MTJ stack for forming a MTJ, performing a deposition process to form a polymer on a sidewall of the MTJ, and removing the polymer to form a rough surface on the sidewall of the MTJ. Preferably, the MTJ could include a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer, in which the rough surface could appear on sidewall of the pinned layer, sidewall of the barrier layer, and/or sidewall of the free layer.
    Type: Application
    Filed: November 14, 2024
    Publication date: February 27, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Wei Liu, Jia-Feng Fang, Chun-Hsien Lin
  • Publication number: 20250065110
    Abstract: An in vitro training method includes scanning a user's oral cavity to create a first oral cavity model. An articulator body is selected according to the first oral cavity model, and plural first customized electrode sheets are formed and assembled onto the articulator body to obtain an in vitro training device. The user bites the in vitro training device during a non-sleep period and uses the plural first customized electrode sheets to proceed with electrical stimulation on a top surface and two sides of a tongue of the user, thereby training a muscular endurance of infrahyoid muscles of the user for a training period. The user's oral cavity is scanned again to create a second oral cavity model. The first oral cavity model is compared with the second oral cavity model to timely renew the customized electrode sheets when the image over rate is lower than 80%.
    Type: Application
    Filed: August 24, 2023
    Publication date: February 27, 2025
    Inventors: BOL-WEI HUANG, YU-SHENG LIN, TUNG-LIN TSAI, CHUN-CHIEH TSENG
  • Publication number: 20250066899
    Abstract: A method includes: positioning a wafer on an electrostatic chuck of a physical vapor deposition apparatus, the wafer including an opening exposing a conductive feature; setting a temperature of the wafer to a room temperature; forming a tungsten thin film in the opening by the physical vapor deposition apparatus, the tungsten thin film including a bottom portion that is on an upper surface of the conductive feature exposed by the opening, a top portion that is on an upper surface of a dielectric layer through which the opening extends and a sidewall portion that is on a sidewall of the dielectric layer exposed by the opening; removing the top portion and the sidewall portion of the tungsten thin film from over the opening; and forming a tungsten plug in the opening on the bottom portion by selectively depositing tungsten by a chemical vapor deposition operation.
    Type: Application
    Filed: August 23, 2023
    Publication date: February 27, 2025
    Inventors: Chun-Yen LIAO, I. LEE, Shu-Lan CHANG, Sheng-Hsuan LIN, Feng-Yu CHANG, Wei-Jung LIN, Chun-I TSAI, Chih-Chien CHI, Ming-Hsing TSAI, Pei Shan CHANG, Chih-Wei CHANG
  • Patent number: 12237395
    Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.
    Type: Grant
    Filed: February 20, 2022
    Date of Patent: February 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ko-Wei Lin, Chun-Chieh Chiu, Chun-Ling Lin, Shu Min Huang, Hsin-Fu Huang
  • Patent number: 12237218
    Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.
    Type: Grant
    Filed: May 6, 2022
    Date of Patent: February 25, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chang-Ting Chung, Shih-Wei Yeh, Kai-Chieh Yang, Yu-Ting Wen, Yu-Chen Ko, Ya-Yi Cheng, Min-Hsiu Hung, Chun-Hsien Huang, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
  • Patent number: 12237329
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.
    Type: Grant
    Filed: December 1, 2023
    Date of Patent: February 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hao Lin, Hsin-Yu Chen, Shou-Wei Hsieh
  • Patent number: 12237400
    Abstract: A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.
    Type: Grant
    Filed: April 6, 2022
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chieh-Wei Chen, Jian-Jou Lian, Tzu-Ang Chiang, Po-Yuan Wang, Yu-Shih Wang, Chun-Neng Lin, Ming-Hsi Yeh
  • Publication number: 20250062202
    Abstract: A semiconductor die and methods of forming the same and a package structure are provided. The semiconductor die includes a semiconductor substrate, a plurality of conductive pads over the semiconductor substrate, a passivation layer over the semiconductor substrate and partially covering the plurality of conductive pads, an interconnecting line disposed on the passivation layer, and a plurality of connectors disposed on and electrically connected to the plurality of conductive pads. Each of the plurality of connectors includes a stacked structure of a first conductive pillar and a second conductive pillar disposed directly on the first conductive pillar, wherein a span of the second conductive pillar is smaller than a span of the first conductive pillar, and an orthogonal projection of the second conductive pillar falls within an orthogonal projection of the first conductive pillar, and the interconnecting line is located beside and spaced apart from the plurality of connectors.
    Type: Application
    Filed: August 17, 2023
    Publication date: February 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Yi Sung, Ta-Hsuan Lin, Hua-Wei Tseng, Mill-Jer Wang
  • Publication number: 20250063776
    Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, and a first electrically conductive structure. The semiconductor substrate has a planar device region and a fin device region. The semiconductor substrate includes a mesa structure disposed in the planar device region and fin-shaped structures disposed in the fin device region. The isolation structure is disposed on the semiconductor substrate and includes a first portion which is disposed on the planar device region and covers a sidewall of the mesa structure, and the isolation structure further includes a second portion which is disposed on the fin device region and located between the fin-shaped structures. The first electrically conductive structure is disposed on the planar device region. The first electrically conductive structure is partly disposed above the mesa structure in a vertical direction and partly disposed above the first portion of the isolation structure in the vertical direction.
    Type: Application
    Filed: September 27, 2023
    Publication date: February 20, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hsin-Yu Chen, Chun-Hao Lin, Yuan-Ting Chuang, Shou-Wei Hsieh
  • Patent number: 12230572
    Abstract: A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.
    Type: Grant
    Filed: May 18, 2023
    Date of Patent: February 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Xuan Huang, Ching-Wei Tsai, Yi-Hsun Chiu, Yi-Bo Liao, Kuan-Lun Cheng, Wei-Cheng Lin, Wei-An Lai, Ming Chian Tsai, Jiann-Tyng Tzeng, Hou-Yu Chen, Chun-Yuan Chen, Huan-Chieh Su
  • Patent number: 12227983
    Abstract: An automatic vehicle-door activating sensing system and a method therefor are provided. The system includes: a distance sensing antenna module and an activating antenna module for generating signals; a processor generates a first distance information, a second distance information, and a activating information according to the signals. When the first distance information is less than a distance threshold and a waveform of the activating information changes, the processor generates and transmits a ready-to-activate signal to an in-vehicle system. When the second distance information is greater than the distance threshold, the processor generates and transmits a vehicle door activating signal to the in-vehicle system. The in-vehicle system can activate the vehicle door after receiving the signals in sequence. With one radar, the invention can automatically activate the vehicle door based on a user's position and kicking behavior, thereby preventing misoperation caused by detection.
    Type: Grant
    Filed: October 24, 2022
    Date of Patent: February 18, 2025
    Assignee: RoyalTek Company Ltd.
    Inventors: Kuo Wei Lin, Chun Yen Chen
  • Patent number: 12230595
    Abstract: A method of forming an integrated circuit structure includes forming a patterned passivation layer over a metal pad, with a top surface of the metal pad revealed through a first opening in the patterned passivation layer, and applying a polymer layer over the patterned passivation layer. The polymer layer is substantially free from N-Methyl-2-pyrrolidone (NMP), and comprises aliphatic amide as a solvent. The method further includes performing a light-exposure process on the polymer layer, performing a development process on the polymer layer to form a second opening in the polymer layer, wherein the top surface of the metal pad is revealed to the second opening, baking the polymer, and forming a conductive region having a via portion extending into the second opening.
    Type: Grant
    Filed: May 28, 2021
    Date of Patent: February 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Da Cheng, Yung-Ching Chao, Chun Kai Tzeng, Cheng Jen Lin, Chin Wei Kang, Yu-Feng Chen, Mirng-Ji Lii
  • Publication number: 20250054900
    Abstract: A package structure includes a circuit substrate, a package unit, a thermal interface material and a cover. The package unit is disposed on and electrically connected with the circuit substrate. The package unit includes a first surface facing the circuit substrate and a second surface opposite to the first surface. A underfill is disposed between the package unit and the circuit substrate, surrounding the package unit and partially covering sidewalls of the package unit. The cover is disposed over the package unit and over the circuit substrate. An adhesive is disposed on the circuit substrate and between the cover and the circuit substrate. The thermal interface material includes a metal-type thermal interface material and is disposed between the cover and the package unit. The thermal interface material physically contacts the second surface and the sidewalls of the package unit and physically contacts the underfill.
    Type: Application
    Filed: August 7, 2023
    Publication date: February 13, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Yen Lan, Chih-Chien Pan, Pu Wang, Li-Hui Cheng, Ying-Ching Shih, Yu-Wei Lin
  • Publication number: 20250056684
    Abstract: A heating device includes a resonant circuit, a detection unit and a control unit. The resonant circuit includes an inverter circuit and a resonant tank. The inverter circuit provides a resonant tank current and a resonant tank voltage. The resonant tank includes a heating coil, a resonant tank capacitor, a resonant tank equivalent inductor and a resonant tank equivalent resistor. The detection unit calculates an inductance of the resonant tank equivalent inductor according to a capacitance of the resonant tank capacitor, a resonant period and a first expression. The detection unit calculates a resistance of the resonant tank equivalent resistor according to the inductance of the resonant tank equivalent inductor, a time change value, a reference voltage value, a negative peak voltage value and a second expression.
    Type: Application
    Filed: December 27, 2023
    Publication date: February 13, 2025
    Inventors: Ming-Shi Huang, Zheng-Feng Li, Jhih-Cheng Hu, Yi-Min Chen, Chun-Wei Lin
  • Publication number: 20250054182
    Abstract: An electronic device includes a camera assembly, a function assembly, and a controller. The camera assembly is configured to capture a first depth image of a first user and a second depth image of the first user. The controller is configured to determine a first spatial position between the first user and the camera assembly according to the first depth image, and control the function assembly to execute a first action according to the first spatial position. The controller further configured to determine a relative displacement between the first user and the camera assembly according to the first depth image and the second depth image, and control the function assembly to execute a second action according to the relative displacement. The second action is an action to adjust a result of the function assembly based on the first action. A method and a non-transitory storage medium are also provided.
    Type: Application
    Filed: December 18, 2023
    Publication date: February 13, 2025
    Inventors: CHING-HUANG LIN, Wei-Wei Qi, Chun-Ren Liu
  • Patent number: 12222253
    Abstract: A medicament delivery device development evaluation system is presented having a dummy medicament delivery device comprising at least one force sensor configured to detect an external force applied to the dummy medicament delivery device, processing circuitry configured to receive force measurements from the force sensor, and a storage medium configured to store the force measurements received by the processing circuitry.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: February 11, 2025
    Assignee: SHL MEDICAL AG
    Inventors: Chun Chang, Chia Cheng Lin, Sheng-wei Lin, Hsueh-Yi Chen, Yiju Chen, Wen-Sheng Chien
  • Patent number: 12224179
    Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.
    Type: Grant
    Filed: March 15, 2023
    Date of Patent: February 11, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Sheng Lin, Chi-Jen Liu, Chi-Hsiang Shen, Te-Ming Kung, Chun-Wei Hsu, Chia-Wei Ho, Yang-Chun Cheng, William Weilun Hong, Liang-Guang Chen, Kei-Wei Chen
  • Publication number: 20250037672
    Abstract: A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to a drive transistor, a data loading transistor, a first capacitor for storing data charge, and a second capacitor. During a data programming phase, the data loading transistor may be activated to load in a data value onto the first capacitor. After the data programming phase, the second capacitor may be configured to receive a lower voltage, which extends a threshold voltage sampling time for the pixel. Configured and operated in this way, the temperature luminance sensitivity of the display can be reduced.
    Type: Application
    Filed: October 18, 2024
    Publication date: January 30, 2025
    Inventors: Shinya Ono, Chin-Wei Lin, Zino Lee, Chun-Chieh Lin, Chen-Ming Chen
  • Patent number: D1062545
    Type: Grant
    Filed: May 7, 2023
    Date of Patent: February 18, 2025
    Assignees: Acer Incorporated, Acer Gadget Inc.
    Inventors: Yun Cheng, Ker-Wei Lin, Hao-Ming Chang, Chun-Ta Chen, Wei-Chen Lee, Chih-Yuan Chang
  • Patent number: D1063712
    Type: Grant
    Filed: May 7, 2023
    Date of Patent: February 25, 2025
    Assignees: Acer Incorporated, Acer Gadget Inc.
    Inventors: Yun Cheng, Ker-Wei Lin, Hao-Ming Chang, Chun-Ta Chen, Wei-Chen Lee, Chih-Yuan Chang