Abstract: An exemplary embodiment of the invention provides a read voltage control method for a rewritable non-volatile memory module. The method includes: sending a first read command sequence which instructs a reading of a plurality of first memory cells by using a first voltage level to obtain first data; obtaining first adjustment information of a read voltage according to the first data and a channel parameter of the first memory cells, and the channel parameter reflects a channel status of the first memory cells; and adjusting a voltage level of the read voltage from the first voltage level to a second voltage level according to the first adjustment information.

Abstract: A read voltage level correction method, a memory storage device, and a memory control circuit unit are provided. The method includes: using a first read voltage level as an initial read voltage level to perform a first data read operation on a first physical unit among multiple physical units to obtain a second read voltage level used to successfully read the first physical unit; recording association information between the first read voltage level and the second read voltage level in a transient look-up table; and performing a second data read operation according to a read level tracking table and the association information recorded in the transient look-up table.

Abstract: A decoding method, a memory storage device and a memory control circuit unit are disclosed. The method includes: activating a decoding circuit which supports a plurality of decoding modes each corresponding to a threshold value, wherein a distribution of the threshold value corresponds to error correction abilities of the decoding modes; reading first data from a rewritable non-volatile memory module; performing, by the decoding circuit, a first decoding operation on the first data; obtaining a decoding parameter according to an execution result of the first decoding operation; and performing, by the decoding circuit, a second decoding operation on the first data based on a first decoding mode among the decoding modes according to a relative numerical relationship between the decoding parameter and the threshold value.

Abstract: A decoding method, a memory storage device and a memory control circuit unit are disclosed. The method includes: activating a decoding circuit which supports a plurality of decoding modes each corresponding to a threshold value, wherein a distribution of the threshold value corresponds to error correction abilities of the decoding modes; reading first data from a rewritable non-volatile memory module; performing, by the decoding circuit, a first decoding operation on the first data; obtaining a decoding parameter according to an execution result of the first decoding operation; and performing, by the decoding circuit, a second decoding operation on the first data based on a first decoding mode among the decoding modes according to a relative numerical relationship between the decoding parameter and the threshold value.

Abstract: A read voltage level correction method, a memory storage device, and a memory control circuit unit are provided. The method includes: using a first read voltage level as an initial read voltage level to perform a first data read operation on a first physical unit among multiple physical units to obtain a second read voltage level used to successfully read the first physical unit; recording association information between the first read voltage level and the second read voltage level in a transient look-up table; and performing a second data read operation according to a read level tracking table and the association information recorded in the transient look-up table.

Abstract: An exemplary embodiment of the invention provides a read voltage control method for a rewritable non-volatile memory module. The method includes: sending a first read command sequence which instructs a reading of a plurality of first memory cells by using a first voltage level to obtain first data; obtaining first adjustment information of a read voltage according to the first data and a channel parameter of the first memory cells, and the channel parameter reflects a channel status of the first memory cells; and adjusting a voltage level of the read voltage from the first voltage level to a second voltage level according to the first adjustment information.