Abstract: Various schemes pertaining to pre-encoding processing of a video stream with motion compensated temporal filtering (MCTF) are described. An apparatus determines a filtering interval for a received raw video stream having pictures in a temporal sequence. The apparatus selects from the pictures a plurality of target pictures based on the filtering interval, as well as a group of reference pictures for each target picture to perform pixel-based MCTF, which generates a corresponding filtered picture for each target picture. The apparatus subsequently transmits the filtered pictures as well as non-target pictures to an encoder for encoding the video stream. Subpictures of natural images and screen content images are separately processed by the apparatus.

Abstract: A waterproof click pad device includes a click pad, a frame and a waterproof unit. The frame surrounds the click pad and surrounds an axis passing through the click pad. The waterproof unit is transverse to the axis and is in sheet form. The waterproof unit includes a frame adhesive member surrounding the axis and adhered to the frame, a first non-adhesive member surrounding the axis, connected to an inner periphery of the frame adhesive member and spaced apart from and located above the frame, a second non-adhesive member surrounding the axis, connected to an inner periphery of the first non-adhesive member and spaced apart from and located above the click pad and the frame, and an plate adhesive member connected to an inner periphery of the second non-adhesive member and adhered to the click pad.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a first well region disposed within a substrate and comprising a first doping type. A conductive structure overlies the first well region. A pair of first doped regions is disposed within the first well region on opposing sides of the conductive structure. The pair of first doped regions comprise a second doping type opposite the first doping type. A pair of second doped regions is disposed within the first well region on the opposing sides of the conductive structure. The pair of second doped regions comprise the second doping type and are laterally offset from the pair of first doped regions by a non-zero distance.

Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.

Abstract: A self-moving cleaning device includes: a base; a mobile module adjacent to the base and configured to contact a surface when the self-moving cleaning device moves on the surface; a vacuum module arranged over the base; a dust box arranged over the base and connected to the vacuum module, the dust box including a first opening and a second opening; a first suction port arranged on the base and including a first suction inlet connected to the first opening; a second suction port arranged on the base and including a second suction inlet connected to the second opening, the first suction port disposed between a front side of the base and the second suction port; a roller brush device arranged on the base and within the second suction port; and an air duct, wherein the first suction port is connected to the dust box through the air duct to thereby connect the first suction inlet to the first opening.

Abstract: A self-moving cleaning device includes: a base; a mobile module adjacent to the base and configured to contact a surface when the self-moving cleaning device moves on the surface; a vacuum module arranged over the base; a dust box arranged over the base and connected to the vacuum module, the dust box including a first opening and a second opening; a first suction port arranged on the base and including a first suction inlet connected to the first opening; a second suction port arranged on the base and including a second suction inlet connected to the second opening, the first suction port disposed between a front side of the base and the second suction port; a roller brush device arranged on the base and within the second suction port; and an air duct, wherein the first suction port is connected to the dust box through the air duct to thereby connect the first suction inlet to the first opening.

Abstract: A universal joint module includes a base, a first bearer, a rotor, a fastening member, and an elastic member. The base has an inner space, a hole, and an opening opposite to the hole communicating with the inner space. The first bearer is disposed in the inner space. The rotor includes a knob rotatably disposed in the inner space and leant against the first bearer, and a shaft connected to the knob and passing through the hole. The fastening member is located in the inner space and close to the opening, and movably fastened to the base to adjust a distance between the fastening member and the first bearer. The elastic member located between the first bearer and the fastening member presses the first bearer to preserve a stress between the first bearer and the knob. A head-mounted display device using the universal joint is also provided.

Abstract: A head-mounted display device includes a belt body, a buckle assembly disposed on the belt body, and an electronic module disposed on the buckle assembly. The buckle assembly includes a base movably fixed to the belt body and a cover detachably disposed on the base. One of the base and the cover includes a sliding rail while the other includes a sliding member. One of the base and the cover includes an arm and a hook protruding from the arm while the other includes an engaging indent. The electronic module including a display module is disposed on the cover. The hook is engaged with the engaging indent so that the cover is fixed to the base.

Abstract: A head-mounted display device includes a belt body, a buckle assembly disposed on the belt body, and an electronic module disposed on the buckle assembly. The buckle assembly includes a base movably fixed to the belt body and a cover detachably disposed on the base. One of the base and the cover includes a sliding rail while the other includes a sliding member. One of the base and the cover includes an arm and a hook protruding from the arm while the other includes an engaging indent. The electronic module including a display module is disposed on the cover. The hook is engaged with the engaging indent so that the cover is fixed to the base.

Abstract: Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive plugs electrically connecting the transistors therein, overlies the substrate. The second dielectric layer, comprising a plurality of capacitor openings exposing the first conductive plugs, overlies the first dielectric layer. The capacitors comprise a plurality of bottom plates, respectively disposed in the capacitor openings, electrically connecting the first conductive plugs, a plurality of capacitor dielectric layers respectively overlying the bottom plates, and a top plate, comprising a top plate opening, overlying the capacitor dielectric layers. The top plate opening exposes the second dielectric layer, and the top plate is shared by the capacitors.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate, an isolation structure formed in the semiconductor substrate, a conductive layer formed over the isolation structure, and a metal-insulator-metal (MIM) capacitor formed over the isolation structure. The MIM capacitor has a crown shape that includes a top electrode, a first bottom electrode, and a dielectric disposed between the top electrode and the first bottom electrode, the first bottom electrode extending at least to a top surface of the conductive layer.

Abstract: A channel information feedback method adapted in a receiving end of a multiuser multiple input multiple output (MU MIMO) system has following steps. A subspace matrix and a magnitude matrix related to a transmitting end of the MU MIMO system are obtained according to a channel matrix corresponding to the receiving end. A first quantization is performed on the subspace matrix to generate a quantized subspace matrix. A second quantization is performed on an auxiliary information matrix to generate a quantized auxiliary information matrix, where the auxiliary information matrix is corresponding to the magnitude matrix and a residual subspace matrix, and the residual subspace matrix includes residual subspace information after the first quantization is performed on the subspace matrix. The quantized subspace matrix and the quantized auxiliary information matrix are fed back to the transmitting end through an uplink channel.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate, an isolation structure formed in the semiconductor substrate, a conductive layer formed over the isolation structure, and a metal-insulator-metal (MIM) capacitor formed over the isolation structure. The MIM capacitor has a crown shape that includes a top electrode, a first bottom electrode, and a dielectric disposed between the top electrode and the first bottom electrode, the first bottom electrode extending at least to a top surface of the conductive layer.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate, an isolation structure formed in the semiconductor substrate, a conductive layer formed over the isolation structure, and a metal-insulator-metal (MIM) capacitor formed over the isolation structure. The MIM capacitor has a crown shape that includes a top electrode, a first bottom electrode, and a dielectric disposed between the top electrode and the first bottom electrode, the first bottom electrode extending at least to a top surface of the conductive layer.

Abstract: An input/output device used for connecting at least one external wire with a display apparatus, comprises a case, at least one I/O connector, a flip cover, and a lighting device. The case embedded in the case of the display apparatus has a wiring slot to provide the wire passing through the case. The I/O connectors embedded on the case are electrically connected to the display apparatus. The flip cover is pivoted on the case. The lighting device having a light source and a switch is associated with the flip cover to turn on or turn off the light source.

Abstract: Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive plugs electrically connecting the transistors therein, overlies the substrate. The second dielectric layer, comprising a plurality of capacitor openings exposing the first conductive plugs, overlies the first dielectric layer. The capacitors comprise a plurality of bottom plates, respectively disposed in the capacitor openings, electrically connecting the first conductive plugs, a plurality of capacitor dielectric layers respectively overlying the bottom plates, and a top plate, comprising a top plate opening, overlying the capacitor dielectric layers. The top plate opening exposes the second dielectric layer, and the top plate is shared by the capacitors.

Abstract: Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive plugs electrically connecting the transistors therein, overlies the substrate. The second dielectric layer, comprising a plurality of capacitor openings exposing the first conductive plugs, overlies the first dielectric layer. The capacitors comprise a plurality of bottom plates, respectively disposed in the capacitor openings, electrically connecting the first conductive plugs, a plurality of capacitor dielectric layers respectively overlying the bottom plates, and a top plate, comprising a top plate opening, overlying the capacitor dielectric layers. The top plate opening exposes the second dielectric layer, and the top plate is shared by the capacitors.

Abstract: A channel information feedback method adapted in a receiving end of a multiuser multiple input multiple output (MU MIMO) system has following steps. A subspace matrix and a magnitude matrix related to a transmitting end of the MU MIMO system are obtained according to a channel matrix corresponding to the receiving end. A first quantization is performed on the subspace matrix to generate a quantized subspace matrix. A second quantization is performed on an auxiliary information matrix to generate a quantized auxiliary information matrix, where the auxiliary information matrix is corresponding to the magnitude matrix and a residual subspace matrix, and the residual subspace matrix includes residual subspace information after the first quantization is performed on the subspace matrix. The quantized subspace matrix and the quantized auxiliary information matrix are fed back to the transmitting end through an uplink channel.

Abstract: One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate, an isolation structure formed in the semiconductor substrate, a conductive layer formed over the isolation structure, and a metal-insulator-metal (MIM) capacitor formed over the isolation structure. The MIM capacitor has a crown shape that includes a top electrode, a first bottom electrode, and a dielectric disposed between the top electrode and the first bottom electrode, the first bottom electrode extending at least to a top surface of the conductive layer.