Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: An electronic device is disclosed. The electronic device includes a system board and a first set of electronic devices disposed over the system board. Each of the first set of electronic devices comprises a processing unit and a carrier carrying the processing unit. The electronic device also includes a first interconnection structure electrically connected with the processing unit through the carrier and configured to receive a first power from a first power supply unit and to transmit the first power to the processing unit.

Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.

Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.

Abstract: A blood pressure device includes a first blood pressure measuring device, a second blood pressure measuring device, and a controller. The first blood pressure measuring device is to be worn on a first position of a wrist so as to obtain a first blood pressure information of the first position. The second blood pressure measuring device is to be worn on a second position of the wrist so as to obtain a second blood pressure information of the second position. The controller is electrically coupled to the first blood pressure measuring device and the second blood pressure measuring device so as to adjust tightness between the expanders and the user's skin, respectively. The controller receives, processes, and calculates a pulse transit time between the first blood pressure information and the second blood pressure information, and the controller obtains at least one blood pressure value based on the pulse transit time.

Abstract: In a method for forming an integrated semiconductor device, a first inter-layer dielectric (ILD) layer is formed over a semiconductor device that includes a first transistor structure, a two-dimensional (2D) material layer is formed over and in contact with the first ILD layer, the 2D material layer is patterned to form a channel layer of a second transistor structure, a source electrode and a drain electrode of the second transistor structure are formed over the patterned 2D material layer and laterally spaced apart from each other, a gate dielectric layer of the second transistor structure is formed over the patterned 2D material layer, the source electrode and the drain electrode, and a gate electrode of the second transistor structure is formed over the gate dielectric layer and laterally between the source electrode and the drain electrode.

Abstract: Dynamic tuning method for a specific absorption rate (SAR) is provided. The dynamic tuning method is applied to user equipment (UE). The dynamic tuning method may include the following steps: the UE may determine the back-off value corresponding to the current antenna state; and the UE may tune the conducted power of the radio frequency (RF) circuit of the UE based on the back-off value.

Abstract: Integrated circuit (IC) devices include a metal-insulator-metal (MIM) capacitor having a top electrode plate, a bottom electrode plate, and a plurality of intermediate electrode plates between the top electrode plate and the bottom electrode plate. A plurality of dielectric layers may separate each of the electrode plates of the MIM capacitor from adjacent plates of the MIM capacitor. Each of the intermediate electrode plates may have a thickness that is greater than a thickness of the top electrode plate and the bottom electrode plate. By providing multiple intermediate electrode plates between the top and bottom electrode plates of the MIM capacitor, and allocating the greatest plate thicknesses to the intermediate plates, the capacitance density may be increased in a given area of the IC device, which may provide increased performance for the IC device.

Abstract: Integrated circuit (IC) devices include a metal-insulator-metal (MIM) capacitor having a top electrode plate, a bottom electrode plate, and a plurality of intermediate electrode plates between the top electrode plate and the bottom electrode plate. A plurality of dielectric layers may separate each of the electrode plates of the MIM capacitor from adjacent plates of the MIM capacitor. Each of the intermediate electrode plates may have a thickness that is greater than a thickness of the top electrode plate and the bottom electrode plate. By providing multiple intermediate electrode plates between the top and bottom electrode plates of the MIM capacitor, and allocating the greatest plate thicknesses to the intermediate plates, the capacitance density may be increased in a given area of the IC device, which may provide increased performance for the IC device.

Abstract: Integrated circuit (IC) devices include a metal-insulator-metal (MIM) capacitor having a top electrode plate, a bottom electrode plate, and a plurality of intermediate electrode plates between the top electrode plate and the bottom electrode plate. A plurality of dielectric layers may separate each of the electrode plates of the MIM capacitor from adjacent plates of the MIM capacitor. Each of the intermediate electrode plates may have a thickness that is greater than a thickness of the top electrode plate and the bottom electrode plate. By providing multiple intermediate electrode plates between the top and bottom electrode plates of the MIM capacitor, and allocating the greatest plate thicknesses to the intermediate plates, the capacitance density may be increased in a given area of the IC device, which may provide increased performance for the IC device.

Abstract: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.

Abstract: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.

Abstract: A bidirectional projector, which may project slides onto two screens at the same time, includes a light source emitting red beam, green beam, and blue beam; at least an imaging device receiving the red beam, the green beam, and the blue beam from the light source and reflecting predetermined parts of the red beam, the green beam, and the blue beam to form an image beam according to image signals; and an optical lens, wherein the image beam emits to the optical lens and a part of the image beam passes through the optical lens to form a first projecting beam, and a part of the image beam is reflected by the optical lens to form a second projecting beam.

Abstract: A bidirectional projector, which may project slides onto two screens at the same time, includes a light source emitting red beam, green beam, and blue beam; at least an imaging device receiving the red beam, the green beam, and the blue beam from the light source and reflecting predetermined parts of the red beam, the green beam, and the blue beam to form an image beam according to image signals; and an optical lens, wherein the image beam emits to the optical lens and a part of the image beam passes through the optical lens to form a first projecting beam, and a part of the image beam is reflected by the optical lens to form a second projecting beam.

Abstract: A zoom lens assembly includes an optical system forming an optical axis and having at least one lens group, a base member (1), a macro ring member (2) rotatably engaged with the base member for accomplishing both zooming and focusing operations, a lens holder (3) received in the macro ring member and having the at least one lens group received therein, a resilient member (4) compressively engaged with the lens holder, and an interengaging means (13, 21; 16, 25) provided between the macro ring member and the base member. The macro ring member has a driving member (22, 27) disposed thereon for manual manipulating. When the driving member is manipulated, the macro ring member is rotated and moved along the optical axis relative to the base member by the action of the interengaging means, and thus the focal length of the optical system is varied for effecting both normal photography and macro photography.

Abstract: A zoom lens assembly includes an optical system forming an optical axis and having at least one lens group, a base member (1), a macro ring member (2) rotatably engaged with the base member for accomplishing both zooming and focusing operations, a lens holder (3) received in the macro ring member and having the at least one lens group received therein, a resilient member (4) compressively engaged with the lens holder, and an interengaging means (13, 21; 16, 25) provided between the macro ring member and the base member. The macro ring member has a driving member (22, 27) disposed thereon for manual manipulating. When the driving member is manipulated, the macro ring member is rotated and moved along the optical axis relative to the base member by the action of the interengaging means, and thus the focal length of the optical system is varied for effecting both normal photography and macro photography.

Abstract: A method of uploading and editing words at a network station, wherein a Unicode table and a font data base are provided in the server of a network mainframe terminal, and an option entry is correspondingly provided on a web page, so that when a client uploads the input Chinese (Big5) character strings and selected fonts, colors, sizes etc. of words to the server of the network mainframe terminal, the Unicode table and the font data base dismantle the input into the corresponding information of character digital codes (Unicode) and colors, sizes etc. and send to a FontFile and the ImageTTFText functions of the database for execution and outputting, a corresponding font graphic file thus is produced and downloaded to a computer at a client's terminal to edit fonts on a web page without installing the software of fonts, colors and sizes of words, thereby, the network station is further endued with the ability of word editing to increase the function of Internet.