Abstract: A black polyester film and a method for manufacturing the same are provided. The black polyester film includes a physically recycled polyester resin and a chemically recycled polyester resin. The physically recycled polyester resin is formed by a plurality of physically recycled polyester chips. The chemically recycled polyester resin is formed by a plurality of chemically recycled polyester chips and mixed with the physically recycled polyester resin. The plurality of chemically recycled polyester chips further include chemically recycled electrostatic pinning polyester chips. The chemically recycled electrostatic pinning polyester chips contain electrostatic pinning additives, and the electrostatic pinning additives are metal salts. Expressed in percent by weight based on a total weight of the polyester film, a content of the electrostatic pinning additives in the polyester film is between 0.005% and 0.1% by weight. The black polyester film further includes a black additive.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A method of manufacturing a memory device includes providing a substrate and sequentially forming a stack layer and a hard mask layer on the substrate. The method includes forming a first patterned mandrel and a plurality of second patterned mandrels on the hard mask layer, wherein the first patterned mandrel is adjacent to and spaced apart from an end of the second patterned mandrels in the first direction. The method further includes using the first patterned mandrel and the second patterned mandrels as masks, patterning the hard mask layer and the stack layer sequentially to form a dummy structure and a plurality of word lines separated from each other on the substrate. A portion of the stack layer corresponding to the first mandrel is formed into the dummy structure, and a portion of the stack layer corresponding to the second patterned mandrels is formed into the word lines.

Abstract: The disclosure discloses a heat-sealable polyester film, including a base layer and a heat-seal layer formed on the base layer. The heat-seal layer includes a physically regenerated polyester resin, a chemically regenerated polyester resin, and a modifier. The heat-sealable temperature of the heat-sealable polyester film is between 100° C. and 230° C.

Abstract: Semiconductor device structure and methods of forming the same are described. The structure includes a dielectric layer disposed over an epitaxy source/drain region and a conductive feature disposed in the dielectric layer. The conductive feature includes a metal liner including a first material and a metal fill surrounded by the metal liner. The metal fill includes the first material having a first grain size. The conductive feature further includes a metal cap disposed on the metal liner and the metal fill, and the metal cap includes the first material having a second grain size different from the first grain size.

Abstract: An image analysis method is provided. In the image analysis method, a to-be analyzed image is inputted into a region-based convolutional neural network (RCNN) model to obtain a masked image outputted from the RCNN. The center of a masked object in the masked image is calculated. The center is regarded as an origin of coordinate and the farthest coordinate point from the origin of coordinate in each of the four quadrants relative to the origin of coordinate are searched. The image analysis block is generated for each of the farthest coordinate points. The post-processing is performed on the image analysis blocks to obtain an object range.

Abstract: The invention provides a light source optimization apparatus including a storage apparatus and a processor. The storage apparatus stores a plurality of modules. The processor is coupled to the storage apparatus and configured to execute the plurality of modules. The plurality of modules include a critical pattern module and a light source optimization module. The critical pattern module retrieves critical pattern data. The light source optimization module executes an ant colony optimization (ACO) algorithm according to a preset parameter to adjust an initial light source image to generate an output light source image, and the initial light source image corresponds to the critical pattern data.

Abstract: A pick-up structure for a memory device and method for manufacturing memory device are provided. The pick-up structure includes a substrate and a plurality of pick-up electrode strips. The substrate has a memory cell region and a peripheral pick-up region adjacent thereto. The pick-up electrode strips are parallel to a first direction and arranged on the substrate in a second direction. The second direction is different from the first direction. Each pick-up electrode strip includes a main part in the peripheral pick-up region and an extension part extending from the main part to the memory cell region. The main part is defined by fork-shaped patterns of a first mask layer. The extension part has a width less than that of the main part, and the extension part has a side wall surface aligned with a side wall surface of the main part.

Abstract: A word line layout includes a substrate, a first word line group, a second word line group, and an I-shaped third word line. The first word line group is disposed on the substrate and includes a plurality of L-shaped first word lines, and each of the first word lines has a first segment and a second segment connected to each other. The second word line group is disposed on the substrate and includes a plurality of L-shaped second word lines, and each of the second word lines has a first segment and a second segment connected to each other. The first word line group and the second word line group are arranged in juxtaposition and symmetric to each other. The I-shaped third word line is disposed on the outer side of the first word line group and the second word line group.

Abstract: A word line layout includes a substrate, a first word line group, a second word line group, and an I-shaped third word line. The first word line group is disposed on the substrate and includes a plurality of L-shaped first word lines, and each of the first word lines has a first segment and a second segment connected to each other. The second word line group is disposed on the substrate and includes a plurality of L-shaped second word lines, and each of the second word lines has a first segment and a second segment connected to each other. The first word line group and the second word line group are arranged in juxtaposition and symmetric to each other. The I-shaped third word line is disposed on the outer side of the first word line group and the second word line group.

Abstract: An image analysis method includes: inputting a to-be analyzed image into a region-based convolutional neural network (RCNN) model; outputting a masked image; calculating the center of a masked object in the masked image using the region-based convolutional neural network model; calculating the center of a masked object in the masked image; regarding the center as a origin of coordinate, searching for the farthest coordinate point from the origin of coordinate in each of the four quadrants relative to the origin of coordinate; generating an image analysis block for each of the farthest coordinate points; and performing post-processing on the image analysis blocks to obtain an object range.

Abstract: The present invention relates to an anti-static photomask, including a substrate and a patterned mask layer formed on the substrate. The patterned mask layer includes a conductive strip and a conductive string, wherein the conductive strip includes an end, and the conductive string includes an isolated end. The end of the conductive strip is connected to the conductive string.

Abstract: A method and device for music format switching. A tone editor is first selected to compose ring tones in accordance with a first music format. It is determined whether a switch operation has been executed. If the switch operation has been executed, the ring tones are composed in accordance with a second music format.

Abstract: A method and device for music format switching. A tone editor is first selected to compose ring tones in accordance with a first music format. It is determined whether a switch operation has been executed. If the switch operation has been executed, the ring tones are composed in accordance with a second music format.