Abstract: Systems and methods are described herein for controlling a switch. In some embodiments, circuitry may detect a voltage across the switch. A current reference signal may be generated based on the voltage across the switch. The switch may be controlled based, at least in part, on the current reference signal.

Abstract: A layout pattern of a static random access memory (SRAM) includes a substrate, a first pull-up transistor (PL1), a first pull-down transistor (PD1), a second (PL2), and a second pull-down transistor (PD2) on the substrate, and a first pass gate transistor (PG1A), a second pass gate transistor (PG1B), a third pass gate transistor (PG2A) and a fourth pass gate transistor (PG2B), wherein the PG1A and the PG1B comprise a first fin structure, the PG2A and the PG2B comprise a second fin structure, a first local interconnection layer disposed between the PG1A and the PG1B and disposed on the fin structures of the PL1 and the PD1, a second local interconnection layer disposed between the PG2A and the PG2B and disposed between the fin structures of the PL2 and the PD2, the first local interconnection layer and the second local interconnection layer are monolithically formed structures respectively.

Abstract: A layout pattern of a static random access memory (SRAM) includes a substrate, a first pull-up transistor (PL1), a first pull-down transistor (PD1), a second (PL2), and a second pull-down transistor (PD2) on the substrate, and a first pass gate transistor (PG1A), a second pass gate transistor (PG1B), a third pass gate transistor (PG2A) and a fourth pass gate transistor (PG2B), wherein the PG1A and the PG1B comprise an identical first fin structure, the PG2A and the PG2B comprise an identical second fin structure, a first local interconnection layer disposed between the PG1A and the PG1B and disposed on the fin structures of the PL1 and the PD1, a second local interconnection layer disposed between the PG2A and the PG2B and disposed between the fin structures of the PL2 and the PD2.

Abstract: The present invention provides a layout pattern of a memory device composed of static random access memory (SRAM), comprising four memory units located on a substrate, each memory unit being located in a non-rectangular region, the four non-rectangular regions combine a rectangular region, wherein each memory unit comprises a first inverter comprising a first pull-up transistor (PL1) and a first pull-down transistor (PD1), a second inverter comprises a second pull-up transistor (PL2) and a second pull-down transistor (PD2), an access transistor (PG) and a switching transistor (SW), wherein the source of the PG is coupled to an input terminal of the first inverter and a drain of the SW, a source of the SW is coupled to an output of the second inverter, wherein the PD1, the PD2, the SW, and the PG comprise a first diffusion region, the PL1 and the PL2 comprise a second diffusion region.

Abstract: The present invention provides a six transistor static random-access memory (6T-SRAM) cell, the 6T-SRAM cell includes a first inverter comprising a first pull-up transistor and a first pull-down transistor, and a first storage node, a second inverter comprising a second pull-up transistor, a second pull-down transistor, and a second storage node, wherein the first storage node is coupled to gates of the second pull-up transistor and the second pull-down transistor, a switch transistor configured to couple the second storage node to gates of the first pull-up transistor and the first pull-down transistor, and an access transistor coupled to gates of the first pull-up transistor and the first pull-down transistor.

Abstract: The present invention provides a six transistor static random-access memory (6T-SRAM) cell, the 6T-SRAM cell includes a first inverter comprising a first pull-up transistor and a first pull-down transistor, and a first storage node, a second inverter comprising a second pull-up transistor, a second pull-down transistor, and a second storage node, wherein the first storage node is coupled to gates of the second pull-up transistor and the second pull-down transistor, a switch transistor configured to couple the second storage node to gates of the first pull-up transistor and the first pull-down transistor, and an access transistor coupled to gates of the first pull-up transistor and the first pull-down transistor.

Abstract: The present invention provides a semiconductor memory device, includes at least one static random access memory (SRAM) cell, wherein the SRAM cell includes a first pick-up node, and a dielectric oxide SRAM (DOSRAM), disposed in a first dielectric layer and disposed above the SRAM cell when viewed in a cross section view, wherein the DOSRAM includes an oxide semiconductor filed effect transistor (OSFET) and a capacitor, a source of the OSFET is electrically connected to the first pick-up node of the SRAM cell through a via structure, and at least parts of the first dielectric layer are disposed between the source of the OSFET and the via structure, and the capacitor is disposed above the OSFET and electrically connected to a drain of the OSFET when viewed in the cross section view.

Abstract: A memory device includes a pickup area extending along a first direction. The pickup area includes at least one N-pickup structure, distributing along an N-pickup line extending at the first direction. At least one P-pickup structure distributes by alternating with the N-pickup structure at the first direction and interleaves with the N-pickup structure at a second direction. The second direction is perpendicular to the first direction. Dummy pickup structure distributes along the first direction, opposite to the P-pickup structure with respect to the N-pickup line. Further, a cell area is beside the pickup area. The SRAM cells in the cell area form cell rows extending along the second direction. Each SRAM cell covers one N-type well region along the second direction and two P-type well regions along the second direction to sandwich the N-type well region. The N-pickup/P-pickup structures respectively provide first/second substrate voltage to the N-type/P-type well regions.

Abstract: A high-density semiconductor structure includes a substrate, a bit line and a first memory unit. The bit line, disposed on the substrate, has a first side and a second side. The first memory unit includes a first transistor, a first capacitor, a second transistor and a second capacitor. The first transistor disposed on the substrate has a first terminal and a second terminal. The first terminal connects the bit line. The first capacitor connects the second terminal of the first transistor. The second transistor disposed on the substrate has a third terminal and a fourth terminal. The third terminal connects the bit line. The second capacitor connects the fourth terminal of the second transistor. The first capacitor and the second capacitor are separated from the bit line in a direction perpendicular to an extending direction of the bit line and located on the first side of the bit line.

Abstract: A hybrid power module for supplying a power to a power amplifier is provided. The hybrid power module includes a DC-DC converter and a linear regulator. The DC-DC converter provides a first current to the power amplifier via a first inductor according to an operating frequency and an envelope tracking signal. The linear regulator provides a second current to the power amplifier via a first capacitor according to the envelope tracking signal. A switch-mode power supply (SMPS) ripple voltage caused by the DC-DC converter is reduced by the linear regulator.

Abstract: A hybrid power module for supplying a power to a power amplifier is provided. The hybrid power module includes a DC-DC converter and a linear regulator. The DC-DC converter provides a first current to the power amplifier via a first inductor according to an operating frequency and an envelope tracking signal. The linear regulator provides a second current to the power amplifier via a first capacitor according to the envelope tracking signal. A switch-mode power supply (SMPS) ripple voltage caused by the DC-DC converter is reduced by the linear regulator.

Abstract: A power module at least includes an ET (Envelope Tracking) module. The ET module includes a buck converter, an inductor, and a capacitor. The buck converter is coupled to a work voltage. The buck converter has a first input terminal for receiving a first control signal, a second input terminal coupled to a supply node, and a buck output terminal The inductor is coupled between the buck output terminal of the buck converter and the supply node. The capacitor is coupled between the supply node and a ground voltage. The ET module is configured to supply a first adaptive supply voltage at the supply node. The first adaptive supply voltage is determined according to the first control signal.

Abstract: A power module at least includes an ET (Envelope Tracking) module. The ET module includes a buck converter, an inductor, and a capacitor. The buck converter is coupled to a work voltage. The buck converter has a first input terminal for receiving a first control signal, a second input terminal coupled to a supply node, and a buck output terminal The inductor is coupled between the buck output terminal of the buck converter and the supply node. The capacitor is coupled between the supply node and a ground voltage. The ET module is configured to supply a first adaptive supply voltage at the supply node. The first adaptive supply voltage is determined according to the first control signal.

Abstract: A power module for envelope tracking includes a linear amplifier and a DC-to-DC (Direct Current to Direct Current) converter. The linear amplifier has a positive input terminal for receiving a first control signal, a negative input terminal, and an output terminal for outputting a first adaptive supply voltage, wherein the output terminal is fed back to the negative input terminal. The DC-to-DC converter receives a second control signal, and supplies a second adaptive supply voltage to the linear amplifier according to the second control signal. The first control signal is related to the second control signal.

Abstract: A power module for envelope tracking includes a linear amplifier and a DC-to-DC (Direct Current to Direct Current) converter. The linear amplifier has a positive input terminal for receiving a first control signal, a negative input terminal, and an output terminal for outputting a first adaptive supply voltage, wherein the output terminal is fed back to the negative input terminal. The DC-to-DC converter receives a second control signal, and supplies a second adaptive supply voltage to the linear amplifier according to the second control signal. The first control signal is related to the second control signal.

Abstract: A control system for dynamically adjusting an output voltage of a voltage converter includes a signal calculation circuit, a pulse width modulator, a voltage converter, a nonlinear calibration circuit and a signal converter. The signal calculation circuit, the pulse width modulator, the voltage converter and the signal converter form a long-tail loop. The signal calculation circuit simultaneously receives a target value and a detection value from the signal converter to generate an error value for adjusting the output of the pulse width modulator. The voltage converter and the nonlinear calibration circuit form a local pulse-squashing loop. Pulse widths of an input signal to the voltage converter can be timely and effectively calibrated and controlled, thereby decreasing power consumption of the voltage converter and providing an effective protective mechanism.

Abstract: A control system for dynamically adjusting an output voltage of a voltage converter includes a signal calculation circuit, a pulse width modulator, a voltage converter, a nonlinear calibration circuit and a signal converter. The signal calculation circuit, the pulse width modulator, the voltage converter and the signal converter form a long-tail loop. The signal calculation circuit simultaneously receives a target value and a detection value from the signal converter to generate an error value for adjusting the output of the pulse width modulator. The voltage converter and the nonlinear calibration circuit form a local pulse-squashing loop. Pulse widths of an input signal to the voltage converter can be timely and effectively calibrated and controlled, thereby decreasing power consumption of the voltage converter and providing an effective protective mechanism.