Abstract: A fabricating method for a pixel structure including following procedures is provided. First, a gate and a gate insulator layer are formed sequentially on a substrate. Next, a semiconductor layer, a conductive layer and a photosensitive black matrix having a color filter containing opening are sequentially formed on the gate insulator layer. The photosensitive black matrix includes a first portion and a second portion. A thickness of the first portion is smaller than that of the second portion. A channel, a source and a drain are formed simultaneously using the photosensitive black matrix as a mask. A passivation is formed on the substrate, and a color filer layer is formed within the color filter containing opening via an inkjet printing process and a dielectric layer is formed thereon. Next, a patterning process is applied to expose the drain. Ultimately, a pixel electrode connected to the drain is formed.