Abstract: A gas sensor is revealed, and the gas sensor comprises a sapphire substrate. An epitaxial oxide sensing layer is disposed on the sapphire substrate and formed by a thin film of single-crystalline gallium oxide series grown by using metal-organic chemical vapor deposition. The material of epitaxial oxide sensing layer include oxygen, gallium, and zinc. Two electrodes are disposed on a portion of the epitaxial oxide sensing layer. When the epitaxial oxide sensing layer senses a gas, a current will be generated and change the resistance. The two electrodes thereon receive the resistance. According to the change of the resistance, the concentration of the gas can be deduced. A heating element is further disposed below the sapphire substrate for providing the temperature required for sensing.

Abstract: The present invention provides a solar-blind detecting device with a wide-bandgap oxide, which comprises an oxide epitaxial sensing layer disposed on a substrate for improving the property as well as substantially increasing the photocurrent in the oxide epitaxial sensing layer under the stimulation of ultraviolet light. Particularly, the sensing performance for the deep ultraviolet region (200˜280 nanometers) is enhanced significantly.

Abstract: The present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Abstract: A concentrated photovoltaic (CPV) cell module, comprising: a shell; a Fresnel lens set, provided on top of said shell; a first solar cell, provided on bottom of said shell and opposite to said Fresnel lens set; and at least a second solar cell, provided on surrounding wall and / or bottom of said shell, so that area originally not capable of generating power is able to generate power, to raise power generating capacity per unit area of said concentrated photovoltaic (CPV) cell module.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.

Abstract: A concentrated photovoltaic (CPV) cell module, comprising: a shell; a Fresnel lens set, provided on top of said shell; a first solar cell, provided on bottom of said shell and opposite to said Fresnel lens set; and at least a second solar cell, provided on surrounding wall and/or bottom of said shell, so that area originally not capable of generating power is able to generate power, to raise power generating capacity per unit area of said concentrated photovoltaic (CPV) cell module.