Patents by Inventor Chun Yu Ho
Chun Yu Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11971659Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.Type: GrantFiled: September 26, 2019Date of Patent: April 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chih Ho, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20240136299Abstract: A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Wei-Yu Chen, Chun-Chih Chuang, Kuan-Lin Ho, Yu-Min Liang, Jiun Yi Wu
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Publication number: 20240126170Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation, the selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. The photoresist composition includes a polymer including monomer units with photocleaving promoters, wherein the photocleaving promoters are one or more selected from the group consisting of living free radical polymerization chain transfer agents, electron withdrawing groups, bulky two dimensional (2-D) or three dimensional (3-D) organic groups, N-(acyloxy)phthalimides, and electron stimulated radical generators.Type: ApplicationFiled: May 22, 2023Publication date: April 18, 2024Inventors: Chun-Chih HO, Chin-Hsiang Lin, Ching-Yu Chang
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Publication number: 20240118618Abstract: A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.Type: ApplicationFiled: April 12, 2023Publication date: April 11, 2024Inventors: Chun-Chih HO, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20240103375Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.Type: ApplicationFiled: November 29, 2023Publication date: March 28, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chih HO, Ching-Yu CHANG, Chin-Hsiang LIN
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Patent number: 11942322Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.Type: GrantFiled: April 9, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: An-Ren Zi, Chun-Chih Ho, Yahru Cheng, Ching-Yu Chang
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Publication number: 20240085369Abstract: Disclosed is a self-powered formaldehyde sensing device, comprising: a triboelectric material electrode layer including a first substrate and a first electrode layer formed on the first substrate; a triboelectric material dielectric layer including a second substrate, a second electrode layer formed on the second substrate, a dielectric reacting layer formed on the second electrode layer, and a reaction modification layer formed on the dielectric reacting layer to surface-modify the dielectric reacting layer, the reaction modification layer being a phosphomolybdic acid complex (cPMA) layer, the phosphomolybdic acid complex of the phosphomolybdic acid complex layer being obtained by dissolving 4,4?-bipyridine (BPY) in isopropanol (IPA) and then mixing with phosphomolybdic acid (PMA) solution; an elastic spacer; and an external circuit.Type: ApplicationFiled: December 21, 2022Publication date: March 14, 2024Applicant: National Taiwan University of Science and TechnologyInventors: Chih-Yu Chang, Chun-Yi Ho, Yu-Hsuan Cheng, Ying-Ying Chen
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Publication number: 20240072115Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.Type: ApplicationFiled: February 13, 2023Publication date: February 29, 2024Inventors: Wei-Xiang You, Wei-De Ho, Hsin Yang Hung, Meng-Yu Lin, Hsiang-Hung Huang, Chun-Fu Cheng, Kuan-Kan Hu, Szu-Hua Chen, Ting-Yun Wu, Wei-Cheng Tzeng, Wei-Cheng Lin, Cheng-Yin Wang, Jui-Chien Huang, Szuya Liao
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Publication number: 20170204032Abstract: Disclosed are a process for preparing branched allyl compounds with an unsymmetrical 1,1-disubstituted alkene, and compounds prepared therewith.Type: ApplicationFiled: July 23, 2014Publication date: July 20, 2017Applicant: South University of Science and Technology of ChinaInventor: Chun-Yu Ho
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Patent number: 9447064Abstract: Disclosed is a process for selectively producing (D+1)-member heterocyclic compounds from corresponding unactivated dienes or derivatives thereof in the presence of a transition metal or lanthanide catalyst or a precursor thereof, relative to D-member heterocyclic rings.Type: GrantFiled: April 30, 2014Date of Patent: September 20, 2016Assignee: THE CHINESE UNIVERSITY OF HONG KONGInventor: Chun Yu Ho
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Publication number: 20150315169Abstract: Disclosed is a process for selectively producing (D+1)-member heterocyclic compounds from corresponding unactivated dienes or derivatives thereof in the presence of a transition metal or lanthanide catalyst or a precursor thereof, relative to D-member heterocyclic rings.Type: ApplicationFiled: April 30, 2014Publication date: November 5, 2015Applicant: THE CHINESE UNIVERSITY OF HONG KONGInventor: Chun Yu HO
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Patent number: 8383873Abstract: Disclosed is a process for preparing terminal 1,1-disubstituted alkenes and is to compounds prepared therewith.Type: GrantFiled: February 16, 2010Date of Patent: February 26, 2013Assignee: The Chinese University of Hong KongInventor: Chun Yu Ho
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Patent number: 8354554Abstract: Disclosed are a process for preparing organometalloids functionalized with an unsymmetrical 1,1-disubstituted alkene, and compounds prepared therewith.Type: GrantFiled: September 22, 2010Date of Patent: January 15, 2013Assignee: The Chinese University of HongKongInventor: Chun Yu Ho
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Publication number: 20120071681Abstract: Disclosed are a process for preparing organometalloids functionalized with an unsymmetrical 1,1-disubstituted alkene, and compounds prepared therewith.Type: ApplicationFiled: September 22, 2010Publication date: March 22, 2012Applicant: THE CHINESE UNIVERSITY OF HONGKONGInventor: Chun Yu HO
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Publication number: 20110201840Abstract: Disclosed is a process for preparing terminal 1,1-disubstituted alkenes and is to compounds prepared therewith.Type: ApplicationFiled: February 16, 2010Publication date: August 18, 2011Applicant: THE CHINESE UNIVERSITY OF HONG KONGInventor: Chun Yu HO