Abstract: An antiferroelectric field effect transistor (Anti-FeFET) of a memory cell includes an antiferroelectric layer instead of a ferroelectric layer. The antiferroelectric layer may operate based on a programmed state and an erased state in which the antiferroelectric layer is in a fully polarized alignment and a non-polarized alignment (or a random state of polarization), respectively. This enables the antiferroelectric layer in the FeFET to provide a sharper/larger voltage drop for an erase operation of the FeFET (e.g., in which the FeFET switches or transitions from the programmed state to the erased state) relative to a ferroelectric material layer that operates based on switching between two opposing fully polarized states.

Abstract: An air conditioning system for a vehicle includes a cabin air conditioning unit, a heat management unit, a temperature detecting unit, a switching unit, and a control unit. The control unit is operable to control operations of the cabin air conditioning unit, the switching unit, and the heat management unit according to temperature detection results from the temperature detecting unit, thereby regulating temperature of at least one of a passenger cabin and a heat generating component, which generates waste heat during operation thereof, of the vehicle.

Abstract: An air conditioning system for a vehicle includes a cabin air conditioning unit, a heat management unit, a temperature detecting unit, a switching unit, and a control unit. The control unit is operable to control operations of the cabin air conditioning unit, the switching unit, and the heat management unit according to temperature detection results from the temperature detecting unit, thereby regulating temperature of at least one of a passenger cabin and a heat generating component, which generates waste heat during operation thereof, of the vehicle.