Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.

Abstract: An image sensor includes a group of sensor units and a color filter layer disposed within the group of sensor units. The image sensor further includes a dielectric structure and a plurality of polarization splitters disposed corresponding to the color filter layer. Each of the plurality of polarization splitters has a first meta element extending in a first direction from top view and a second meta element extending in a second direction from top view. The second direction is perpendicular to the first direction.

Abstract: A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: A structure includes a redistribution structure, which includes a bottom layer and a plurality of upper layers over the bottom layer. The redistribution structure also includes a power-ground macro extending from a topmost layer in the plurality of upper layers to a bottommost layer in the plurality of upper layers, and a metal pad in the bottom layer and overlapped by the power-ground macro. The metal pad is electrically disconnected from the power-ground macro.

Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: A touch display device is provided in this disclosure. The touch display device includes a substrate, a first conductive layer, a second conductive layer, a stacked structure, an inorganic light emitting unit, and a touch sensing circuit. The first conductive layer is disposed on the substrate. The first conductive layer includes a gate electrode. The second conductive layer is disposed on the first conductive layer. The second conductive layer includes a source electrode and a drain electrode. The stacked structure is disposed on the substrate. The stacked structure includes a conductive channel and a sensing electrode. The inorganic light emitting unit is disposed on the stacked structure. The inorganic light emitting unit is electrically connected with the drain electrode via the conductive channel. The touch sensing circuit is electrically connected with the sensing electrode.

Abstract: The present invention provides an alcohol extract of Ajuga taiwanensis Nakai ex Murata exhibits significant effects on inhibiting the senescence in human WI-38 lung fibroblasts and human dermal fibroblasts. Moreover, the alcohol extract of A. taiwanensis is able to suppress the expression of the cofilin-1, a protein involved in actin dynamics and cell morphology and found to be increased in senescent cells. Suppression effect of cell senescence by this herb extract is more efficient in mild concentration without over-inhibition of cell viability and growth.

Abstract: The present invention provides an alcohol extract of Ajuga taiwanensis Nakai ex Murata exhibits significant effects on inhibiting the senescence in human WI-38 lung fibroblasts and human dermal fibroblasts. Moreover, the alcohol extract of A. taiwanensis is able to suppress the expression of the cofilin-1, a protein involved in actin dynamics and cell morphology and found to be increased in senescent cells. Suppression effect of cell senescence by this herb extract is more efficient in mild concentration without over-inhibition of cell viability and growth.

Abstract: A fixing apparatus of expansion board includes a supporting printed circuit board (PCB), a securing shelf, and a motherboard expansion slot. The supporting PCB is fixed on the securing shelf and is inserted into the motherboard expansion slot. The supporting PCB defines at least one slot to connect at least one expansion card.

Abstract: A passive anode gas recovery system for fuel cells is revealed. The system includes a fuel cell, a fuel supply device, an electronically controlled regulator, a first ejection module, a second ejection module, a hydrogen recovery module, and a controller. The system is a passive fuel recovery system disposed on an outlet end of an anode of the fuel cell. By the controller, the hydrogen recovery module recovers unconsumed hydrogen gas in the fuel cell provided by the fuel supply device into two ejection modules with different orifice diameters for recycling and reuse. The system has advantages of low cost, no extra energy consumed, and no external controller required. The system can be applied to developing fuel cell systems with high efficiency and low cost.

Abstract: A passive anode gas recovery system for fuel cells is revealed. The system includes a fuel cell, a fuel supply device, an electronically controlled regulator, a first ejection module, a second ejection module, a hydrogen recovery module, and a controller. The system is a passive fuel recovery system disposed on an outlet end of an anode of the fuel cell. By the controller, the hydrogen recovery module recovers unconsumed hydrogen gas in the fuel cell provided by the fuel supply device into two ejection modules with different orifice diameters for recycling and reuse. The system has advantages of low cost, no extra energy consumed, and no external controller required. The system can be applied to developing fuel cell systems with high efficiency and low cost.

Abstract: An exemplary electronic device with connectors and fasteners for alignment of the connectors includes a panel, a printed circuit board, and a shell. The printed circuit board includes a number of connectors arranged thereon. A number of holes are defined in the shell for expose the connectors. The printed circuit board defines a number of through holes therein. The panel defines a number of positioning holes therein. The shell forms a number of positioning posts thereon, and each positioning post defines an engaging hole therein. The present disclosure also includes a number of fasteners. Each fastener includes a first and a second positioning part. The first positioning part inserts through a corresponding through hole and a corresponding positioning hole to connect the printed circuit board and the panel. The second positioning part is engagingly received in the engaging hole of a corresponding positioning post of the shell.

Abstract: A cable tidying device includes a bracket mounted to a cabinet, a bobbin for wrapping cables inserted into the cabinet, and a locating member for locating the bobbin. The bracket includes a positioning plate defining a positioning hole and a first groove surrounding the positioning hole. The bobbin includes a wrapping axis extending through the first groove, and a driving portion extending from the wrapping axis. The locating member includes a spine plate, a fixing portion, and a spring resisting between the fixing portion and the positioning plate. The spine plate includes a main body, a protruding post protruding from the main body, and a plurality of ratchets spaced from each other. The fixing portion is attached to the protruding post. The driving portion engages with a different ratchet to locate the bobbin in a different position of the first groove.