Patents by Inventor Chun-Yuan Gu

Chun-Yuan Gu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050199602
    Abstract: A method for controlling an arc welding equipment (21) used in a welding operation and adjustable by varying at least one welding parameter value, comprising the steps of determining said at least one welding parameter while using a theoretical model (24) of the welding process associated with the welding operation, and controlling the operation of the welding equipment and the welding process associated therewith by using said at least one welding parameter for adjusting the welding equipment and a device comprising an arc welding equipment (21) used in a welding operation and adjustable by varying at least one welding parameter and an arrangement (22) for controlling the operation of the arc welding equipment, said control arrangement including a means (23) adapted to determine the value of said at least one welding parameter while using a theoretical model (24) of the welding process, and a member (25) adapted to control the operation of the welding equipment and the welding process associated therewith by
    Type: Application
    Filed: March 28, 2002
    Publication date: September 15, 2005
    Inventors: Ahmed Kaddani, Pascale Ruault-Kaddani, Ulrike Windecker, Dick Skarin, Pavel Lemarinier, Said Zahrai, Chun-Yuan Gu
  • Patent number: 6093253
    Abstract: A device for epitaxial growth of objects by Chemical Vapor Deposition on a substrate comprises a susceptor adapted to receive the substrate and members for heating walls of the susceptor surrounding the substrate and thereby the substrate and a gas mixture fed to the substrate for the growth. The device comprises also members for holding the substrate in the path of the gas mixture through the susceptor at a distance from internal walls thereof.
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: July 25, 2000
    Assignee: ABB Research Ltd.
    Inventors: Peter Lofgren, Chun Yuan Gu, Christer Hallin, Yujing Liu
  • Patent number: 6039812
    Abstract: A device for epitaxially growing objects of for instance SiC by Chemical Vapor Deposition on a substrate has a first conduit (24) arranged to conduct substantially only a carrier gas to a room (18) receiving the substrate and a second conduit (25) received in the first conduit, having a smaller cross-section than the first conduit and extending in the longitudinal direction of the first conduit with a circumferential space separating it from inner walls of the first conduit. The second conduit is adapted to conduct substantially the entire flow of reactive gases and it ends as seen in the direction of the flows, and emerges into the first conduit at a distance from said room.
    Type: Grant
    Filed: October 28, 1997
    Date of Patent: March 21, 2000
    Assignees: ABB Research Ltd., Okmetic Ltd.
    Inventors: Alex Ellison, Olle Kordina, Chun-Yuan Gu, Christer Hallin, Erik Janzen, Marko Tuominen