Patents by Inventor Chun-Yuan Ku

Chun-Yuan Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120097246
    Abstract: A solar cell includes a crystalline semiconductor substrate; a first crystalline semiconductor layer; an amorphous semiconductor layer; a first metal electrode layer and a second metal electrode layer. The crystalline semiconductor substrate has a first surface and a second surface, and the crystalline semiconductor substrate has a first doped type. The first crystalline semiconductor layer is disposed on the first surface of the crystalline semiconductor substrate, where the first crystalline semiconductor layer has a second doped type contrary to the first doped type. The amorphous semiconductor layer is disposed on the first crystalline semiconductor layer, and the amorphous semiconductor layer has the second doped type. The first metal electrode layer is disposed on the amorphous semiconductor layer. The second metal electrode layer is disposed on the second surface of the crystalline semiconductor substrate.
    Type: Application
    Filed: March 29, 2011
    Publication date: April 26, 2012
    Inventors: Chee-Wee Liu, Wei-Shuo Ho, Yen-Yu Chen, Chun-Yuan Ku, Zhen-Cheng Wu, Shuo-Wei Liang, Jen-Chieh Chen, Chung-Wei Lai, Tsung-Pao Chen
  • Publication number: 20110284074
    Abstract: A photovoltaic cell includes a first type doped mono-crystalline silicon substrate, an intrinsic amorphous silicon layer, a second type doped amorphous silicon layer, a first type doped crystalline Ge-containing layer, and a pair of electrodes. The first type doped mono-crystalline silicon substrate has a front surface and a rear surface. The intrinsic amorphous silicon layer is disposed on the front surface. The second type doped amorphous silicon layer is disposed on the intrinsic amorphous silicon layer. The first type doped crystalline Ge-containing layer is disposed on the rear surface. The pair of electrodes are electrically connected to the second type doped amorphous silicon layer and first type doped crystalline Ge-containing layer, respectively.
    Type: Application
    Filed: September 27, 2010
    Publication date: November 24, 2011
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Chee-Wee Liu, Wei-Shuo Ho, Yen-Yu Chen, Chun-Yuan Ku, Chien-Jen Chen, Han-Tu Lin, Shuo-Wei Liang