Abstract: A method for fabricating a POP structure is disclosed. First, a first package is provided, which has: a dielectric layer; a stacked circuit layer embedded in the dielectric layer and exposed from upper and lower surfaces of the dielectric layer; a plurality of conductive posts and a semiconductor chip disposed on the upper surface of the dielectric layer and electrically connected to the stacked circuit layer; and an encapsulant formed on upper surface of the dielectric layer for encapsulating the semiconductor chip and the conductive posts and having a plurality of openings for exposing top ends of the conductive posts. Then, a second package is disposed on the encapsulant and electrically connected to the conductive posts. The formation of the conductive posts facilitates to reduce the depth of the openings of the encapsulant, thereby reducing the fabrication time and increasing the production efficiency and yield.

Abstract: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Abstract: A semiconductor package and a method for fabricating the same are provided. A leadframe including a die pad and a plurality of peripheral leads is provided. A carrier, having a plurality of connecting pads formed thereon, is attached to the die pad, wherein a planar size of the carrier s greater than that of the die pad, allowing the connecting pads on the carrier to be exposed from the die pad. At least a semiconductor chip is attached to a side of an assembly including the die pad and the carrier, and is electrically connected to the connecting pads of the carrier and the leads via bonding wires. A package encapsulant encapsulates the semiconductor chip, the bonding wires, a part of the carrier and a part of the leadframe, allowing a bottom surface of the carrier and a part of the leads to be exposed from the package encapsulant.

Abstract: A method for fabricating a POP structure is disclosed. First, a first package is provided, which has: a dielectric layer; a stacked circuit layer embedded in the dielectric layer and exposed from upper and lower surfaces of the dielectric layer; a plurality of conductive posts and a semiconductor chip disposed on the upper surface of the dielectric layer and electrically connected to the stacked circuit layer; and an encapsulant formed on upper surface of the dielectric layer for encapsulating the semiconductor chip and the conductive posts and having a plurality of openings for exposing top ends of the conductive posts. Then, a second package is disposed on the encapsulant and electrically connected to the conductive posts. The formation of the conductive posts facilitates to reduce the depth of the openings of the encapsulant, thereby reducing the fabrication time and increasing the production efficiency and yield.

Abstract: A semiconductor package structure includes: a dielectric layer; a metal layer disposed on the dielectric layer and having a die pad and traces, the traces each including a trace body, a bond pad extending to the periphery of the die pad, and an opposite trace end; metal pillars penetrating the dielectric layer with one ends thereof connecting to the die pad and the trace ends while the other ends thereof protruding from the dielectric layer; a semiconductor chip mounted on the die pad and electrically connected to the bond pads through bonding wires; and an encapsulant covering the semiconductor chip, the bonding wires, the metal layer, and the dielectric layer. The invention is characterized by disposing traces with bond pads close to the die pad to shorten bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging encountered in prior techniques.

Abstract: A package structure includes a base body having a first encapsulant and a wiring layer embedded in and exposed from the first encapsulant. The wiring layer has a plurality of conductive traces and a plurality of first electrical contact pads. The first encapsulant has openings for exposing the first electrical contact pads, a chip electrically connected to the wiring layer, and a second encapsulant formed on the base body for covering the chip and the wiring layer, thereby providing an even surface for preventing the encapsulant from cracking when the chip is mounted.

Abstract: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Abstract: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Abstract: A semiconductor package and a method for fabricating the same are provided. A leadframe including a die pad and a plurality of peripheral leads is provided. A carrier, having a plurality of connecting pads formed thereon, is attached to the die pad, wherein a planar size of the carrier s greater than that of the die pad, allowing the connecting pads on the carrier to be exposed from the die pad. At least a semiconductor chip is attached to a side of an assembly including the die pad and the carrier, and is electrically connected to the connecting pads of the carrier and the leads via bonding wires. A package encapsulant encapsulates the semiconductor chip, the bonding wires, a part of the carrier and a part of the leadframe, allowing a bottom surface of the carrier and a part of the leads to be exposed from the package encapsulant.

Abstract: A semiconductor package and a method for fabricating the same are provided. A leadframe including a die pad and a plurality of peripheral leads is provided. A carrier, having a plurality of connecting pads formed thereon, is attached to the die pad, wherein a planar size of the carrier is greater than that of the die pad, allowing the connecting pads on the carrier to be exposed from the die pad. At least a semiconductor chip is attached to a side of an assembly including the die pad and the carrier, and is electrically connected to the connecting pads of the carrier and the leads via bonding wires. A package encapsulant encapsulates the semiconductor chip, the bonding wires, a part of the carrier and a part of the leadframe, allowing a bottom surface of the carrier and a part of the leads to be exposed from the package encapsulant.

Abstract: A semiconductor package structure includes: a dielectric layer; a metal layer disposed on the dielectric layer and having a die pad and traces, the traces each including a trace body, a bond pad extending to the periphery of the die pad, and an opposite trace end; metal pillars penetrating the dielectric layer with one ends thereof connecting to the die pad and the trace ends while the other ends thereof protruding from the dielectric layer; a semiconductor chip mounted on the die pad and electrically connected to the bond pads through bonding wires; and an encapsulant covering the semiconductor chip, the bonding wires, the metal layer, and the dielectric layer. The invention is characterized by disposing traces with bond pads close to the die pad to shorten bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging encountered in prior techniques.

Abstract: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Abstract: A fabrication method of a semiconductor package structure includes: patterning a metal plate having first and second surfaces; forming a dielectric layer on the metal plate; forming a metal layer on the first surface and the dielectric layer; forming metal pads on the second surface, the metal layer having a die pad and traces each having a bond pad; mounting a semiconductor chip on the die pad, followed by connecting electrically the semiconductor chip to the bond pads through bonding wires; forming an encapsulant to cover the semiconductor chip and the metal layer; removing portions of the metal plate not covered by the metal pads so as to form metal pillars; and performing a singulation process. The fabrication method is characterized by disposing traces with bond pads close to the die pad to shorten the bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging.

Abstract: A fabrication method of a semiconductor package structure includes: patterning a metal plate having first and second surfaces; forming a dielectric layer on the metal plate; forming a metal layer on the first surface and the dielectric layer; forming metal pads on the second surface, the metal layer having a die pad and traces each having a bond pad; mounting a semiconductor chip on the die pad, followed by connecting electrically the semiconductor chip to the bond pads through bonding wires; forming an encapsulant to cover the semiconductor chip and the metal layer; removing portions of the metal plate not covered by the metal pads so as to form metal pillars; and performing a singulation process. The fabrication method is characterized by disposing traces with bond pads close to the die pad to shorten the bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging.

Abstract: A semiconductor package structure includes: a dielectric layer; a metal layer disposed on the dielectric layer and having a die pad and traces, the traces each including a trace body, a bond pad extending to the periphery of the die pad, and an opposite trace end; metal pillars penetrating the dielectric layer with one ends thereof connecting to the die pad and the trace ends while the other ends thereof protruding from the dielectric layer; a semiconductor chip mounted on the die pad and electrically connected to the bond pads through bonding wires; and an encapsulant covering the semiconductor chip, the bonding wires, the metal layer, and the dielectric layer. The invention is characterized by disposing traces with bond pads close to the die pad to shorten bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging encountered in prior techniques.

Abstract: A package structure includes a base body having a first encapsulant and a wiring layer embedded in and exposed from the first encapsulant. The wiring layer has a plurality of conductive traces and a plurality of first electrical contact pads. The first encapsulant has openings for exposing the first electrical contact pads, a chip electrically connected to the wiring layer, and a second encapsulant formed on the base body for covering the chip and the wiring layer, thereby providing an even surface for preventing the encapsulant from cracking when the chip is mounted.

Abstract: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Abstract: A fabrication method of a package structure includes: preparing a metal plate having first and second surfaces and defined with an active region; forming a wiring layer with conductive traces and first electrical contact pads on the first surface; forming third electrical contact pads corresponding to the first electrical contact pads on the second surface; forming a first encapsulant on the first surface; forming on the second surface an open area to penetrate the metal plate, wherein the metal plate form conductive posts between the first and third electrical contact pads; mounting in the open area a chip electrically connected to the wiring layer; forming a second encapsulant in the open area, the wiring layer and the third electrical contact pads; forming first and second openings in the first and second encapsulants to expose the third electrical contact pads, respectively; and cutting the metal plate to remove the metal layer.

Abstract: A semiconductor package and a method for fabricating the same are provided. A leadframe including a die pad and a plurality of peripheral leads is provided. A carrier, having a plurality of connecting pads formed thereon, is attached to the die pad, wherein a planar size of the carrier is greater than that of the die pad, allowing the connecting pads on the carrier to be exposed from the die pad. At least a semiconductor chip is attached to a side of an assembly including the die pad and the carrier, and is electrically connected to the connecting pads of the carrier and the leads via bonding wires. A package encapsulant encapsulates the semiconductor chip, the bonding wires, a part of the carrier and a part of the leadframe, allowing a bottom surface of the carrier and a part of the leads to be exposed from the package encapsulant.

Abstract: A semiconductor package and a method for fabricating the same are disclosed, which includes: providing a carrier board, forming a plurality of metal bumps on the carrier board, forming a metal layer on the carrier board to encapsulate the metal bumps, having at least one semiconductor chip electrically connected to the metal layer, then forming an encapsulant on the carrier board to encapsulate the semiconductor chip, and next removing the carrier board and the metal bumps to correspondingly form a plurality of grooves on surface of the encapsulant, wherein bottom and sides of the grooves are covered with the metal layer to allow electroconductive components to be effectively positioned in the grooves and completely bonded with the metal layer.