Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.

Abstract: A method for manufacturing a natural pesticide and a water quenching device thereof are provided. The method includes the steps of: burning paddy at a high temperature of 400-900° C. into carbonized paddy, wherein the carbonized paddy comprises at least 50% silica, at least 10% organic matter, at least 2% potassium, and at most 2% water; using a water quenching device to quench and heat the carbonized paddy, enabling the carbonized paddy to form a gas and a solid substance by means of solid-liquid separation; using the water quenching device to condense the gas separated from the carbonized paddy into a liquid; and testing a PH value of the liquid after condensation through the water quenching device, wherein when the PH value of the liquid is alkaline, the liquid is outputted and stored as a pesticide.