Abstract: The invention provides a silicide capacitive micro electromechanical structure and fabrication method thereof, comprising a substrate, a passivation layer, a silicon layer, a first metal layer, and a dielectric layer. The passivation layer is formed on the substrate; the silicon layer and the first metal layer are formed on the passivation layer. The first metal layer includes a contact part and a conductive part. The contact parts contact at least a part of the silicon layer, and the conductive portion extends away from the silicon layer to electrically connect an external circuit. The dielectric layer is formed on the passivation layer, and at least the silicon layer and the first metal layer are covered by the dielectric layer. After an annealing process is performed, the conductive portion remains in contact with the silicon layer after the silicidation reaction to maintain an electrical connection with the external circuit.

Abstract: A housing (100) for an electronic device includes an opaque base (10). The base has a plurality of blind holes (120) and a number of through holes (140) defined therein. Each through hole communicates with a corresponding blind hole. The through holes are arrayed in a determined pattern.

Abstract: A housing (100) for an electronic device includes an opaque base (10). The base has a plurality of blind holes (120) and a number of through holes (140) defined therein. Each through hole communicates with a corresponding blind hole. The through holes are arrayed in a determined pattern.

Abstract: A housing (10) is applied to an electronic device. The housing includes a transparent base (12) and a first metal coating (14). The base contains a first surface (122). The first metal coating is formed on the first surface of the base. A plurality of first through holes (142) is defined in the metal coating. The first through holes are in an arrayed pattern.