Patents by Inventor Chune-Te YANG

Chune-Te YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250167014
    Abstract: A method of using an exhaust structure includes receiving a gas at an intake section, the intake section has a first inner diameter at a first position. The method includes passing the gas from the intake section to a piping section, wherein the piping section has the first inner diameter in a central region of the piping section, and the first position is farthest from the central region. The method includes outputting the gas from an output section connected to the piping section, wherein the output section comprises a curved portion configured to change a direction of the gas, and the output section has the first inner diameter at a position of the output section farthest from the central region. The method includes resisting turbulence and condensation during propagation of the gas through the piping section using a plurality of smoothing layers on an inner diameter of the piping section.
    Type: Application
    Filed: January 17, 2025
    Publication date: May 22, 2025
    Inventors: Hsien-Chang HSIEH, Chun-Chih LIN, Tah-te SHIH, Wen-Hsong WU, Chune-Te YANG, Yu-Jen SU
  • Patent number: 12230517
    Abstract: An exhaust structure includes a piping section, wherein the piping section has a first inner diameter in a central region of the piping section, the piping section has a second diameter in at least one of an inlet or an outlet, and the second diameter has a same value as the first inner diameter. The exhaust structure further includes a plurality of smoothing layers configured to resist turbulence and condensation produced by a flow of one or more gasses in the piping section.
    Type: Grant
    Filed: May 26, 2022
    Date of Patent: February 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Chang Hsieh, Chun-Chih Lin, Tah-te Shih, Wen-Hsong Wu, Chune-Te Yang, Yu-Jen Su
  • Publication number: 20220285177
    Abstract: An exhaust structure includes a piping section, wherein the piping section has a first inner diameter in a central region of the piping section, the piping section has a second diameter in at least one of an inlet or an outlet, and the second diameter has a same value as the first inner diameter. The exhaust structure further includes a plurality of smoothing layers configured to resist turbulence and condensation produced by a flow of one or more gasses in the piping section.
    Type: Application
    Filed: May 26, 2022
    Publication date: September 8, 2022
    Inventors: Hsien-Chang HSIEH, Chun-Chih LIN, Tah-te SHIH, Wen-Hsong WU, Chune-Te YANG, Yu-Jen SU
  • Patent number: 11348811
    Abstract: An exhaust structure includes an intake section which includes an inlet, an output section which includes an outlet, and a piping section coupled to the intake section and the output section at a section interface. The piping section includes a first inner diameter from the intake section to the output section, wherein one of the intake section or the output section has a second inner diameter at the section interface. The second inner diameter includes a same value as a value of the first inner diameter. A plurality of smoothing layers are configured to resist turbulence and condensation produced by a flow of one or more gasses in the intake section, the output section, and the piping section.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: May 31, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Chang Hsieh, Chun-Chih Lin, Tah-Te Shih, Wen-Hsong Wu, Chune-Te Yang, Yu-Jen Su
  • Publication number: 20190348309
    Abstract: An exhaust structure includes an intake section which includes an inlet, an output section which includes an outlet, and a piping section coupled to the intake section and the output section at a section interface. The piping section includes a first inner diameter from the intake section to the output section, wherein one of the intake section or the output section has a second inner diameter at the section interface. The second inner diameter includes a same value as a value of the first inner diameter. A plurality of smoothing layers are configured to resist turbulence and condensation produced by a flow of one or more gasses in the intake section, the output section, and the piping section.
    Type: Application
    Filed: July 23, 2019
    Publication date: November 14, 2019
    Inventors: Hsien-Chang HSIEH, Chun-Chih LIN, Tah-te SHIH, Wen-Hsong WU, Chune-Te YANG, Yu-Jen SU
  • Patent number: 10366909
    Abstract: An exhaust structure includes an intake section including a first high thermal conductivity material, the intake section having an inlet, an output section including a second high thermal conductivity material, the output section having an outlet, and a piping section including a third high thermal conductivity material, the piping section being configured to communicatively couple the intake section with the output section. The exhaust structure provides a high thermal conductivity path from the inlet to the outlet, the high thermal conductivity path including the first high thermal conductivity material, the second high thermal conductivity material, and the third high thermal conductivity material.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: July 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Chang Hsieh, Chun-Chih Lin, Tah-te Shih, Wen-Hsong Wu, Chune-Te Yang, Yu-Jen Su
  • Publication number: 20190035653
    Abstract: An exhaust structure includes an intake section including a first high thermal conductivity material, the intake section having an inlet, an output section including a second high thermal conductivity material, the output section having an outlet, and a piping section including a third high thermal conductivity material, the piping section being configured to communicatively couple the intake section with the output section. The exhaust structure provides a high thermal conductivity path from the inlet to the outlet, the high thermal conductivity path including the first high thermal conductivity material, the second high thermal conductivity material, and the third high thermal conductivity material.
    Type: Application
    Filed: September 1, 2017
    Publication date: January 31, 2019
    Inventors: Hsien-Chang HSIEH, Chun-Chih LIN, Tah-te SHIH, Wen-Hsong WU, Chune-Te YANG, Yu-Jen SU
  • Patent number: 9570334
    Abstract: A method for positioning a wafer in semiconductor fabrication is provided. The method includes sending a wafer into a processing chamber by a transferring module. The method further includes producing a video image in relation to an edge of the wafer by a monitoring module. The method also includes performing an image analysis on the video image to determine if the edge of the wafer is in a correct position. If the edge of the wafer is not in a correct position a shifting value is calculated and the wafer is moved according to the shifting value.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: February 14, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yao-Yuan Shang, Kuo-Shu Tseng, Chune-Te Yang, Chi-Hsin Chan, Chung-Jhieh Chen
  • Publication number: 20160293471
    Abstract: A method for positioning a wafer in semiconductor fabrication is provided. The method includes sending a wafer into a processing chamber by a transferring module. The method further includes producing a video image in relation to an edge of the wafer by a monitoring module. The method also includes performing an image analysis on the video image to determine if the edge of the wafer is in a correct position. If the edge of the wafer is not in a correct position a shifting value is calculated and the wafer is moved according to the shifting value.
    Type: Application
    Filed: March 31, 2015
    Publication date: October 6, 2016
    Inventors: Yao-Yuan SHANG, Kuo-Shu TSENG, Chune-Te YANG, Chi-Hsin CHAN, Chung-Jhieh CHEN