Abstract: A processed semiconductor wafer has layered elements that define electrical circuits and a double-seal ring surrounding each individual electrical circuit. The layered elements further define another double-seal ring that surrounds at least two electrical circuits. The processed semiconductor wafer can have additional layered elements that extend each of the double-seal rings that surround individual circuits or, that can extend the other double-seal ring. A method of fabricating such a processed semiconductor wafer. A device comprising two such electrical circuits.

Abstract: The invention relates to a site-specific mutagenesis modified yeast dipeptidyl peptidase III. The yeast dipeptidyl peptidase III is an isolated mutant produced by making a plurality of amino acid substitutions in a wild type yeast dipeptidyl peptidase III derived from Saccharomyces cerevisiae S288c having an amino acid sequence of SEQ ID NO. 1, said amino acid substitutions comprising substitutions at positions 570, 572 and 574, so that the site-specific mutagenesis modified yeast dipeptidyl peptidase III is an enzyme having an oxidative decomposition activity on 6-methoxy-bifuran coumarin. The site-specific mutagenesis modified yeast dipeptidyl peptidase III can be used in preparation of a feed and additives thereof, and a food and additives thereof, in which 6-methoxy difuran coumarin is eliminated, and can be used in preparation of a medicament for preventing diseases induced by 6-methoxy-difuran coumarin.

Abstract: A method of reducing current leakage in product variants of a semiconductor device, during the fabrication of the semiconductor device. The method involves using a semiconductor process technique for reducing current leakage in semiconductor product variants having unused circuits. A semiconductor device or integrated circuit fabricated by this method has reduced current leakage upon powering as well as during operation. The method involves semiconductor process technique that substantially increases the Vt (threshold voltage) of all transistors of a given type, such as all N-type transistors or all P-type transistors.

Abstract: A method of reducing current leakage in unused circuits performed during semiconductor fabrication and a semiconductor device or integrated circuit thereby formed. The method involves modifying a characteristic of at least one idle circuit that is unused in a product variant, to inhibit the circuit and reduce current leakage therefrom upon powering as well as during operation. The method can substantially increase the Vt (threshold voltage) of all transistors of a given type, such as all N-type transistors or all P-type transistors. The method is also suitable for controlling other transistor parameters, such as transistor channel length, as well as other active elements, such as N-type resistors or P-type resistors, in unused circuits which affect leakage current as well as for other unused circuits, such as a high Vt circuit, a standard Vt circuit, a low Vt circuit, and an SRAM cell Vt circuit.

Abstract: A method of reducing current leakage in unused circuits performed during semiconductor fabrication and a semiconductor device or integrated circuit thereby formed. The method involves modifying a characteristic of at least one idle circuit that is unused in a product variant, to inhibit the circuit and reduce current leakage therefrom upon powering as well as during operation. The method can substantially increase the Vt (threshold voltage) of all transistors of a given type, such as all N-type transistors or all P-type transistors. The method is also suitable for controlling other transistor parameters, such as transistor channel length, as well as other active elements, such as N-type resistors or P-type resistors, in unused circuits which affect leakage current as well as for other unused circuits, such as a high Vt circuit, a standard Vt circuit, a low Vt circuit, and an SRAM cell Vt circuit.

Abstract: The present invention relates to a detoxifizyme with the activity of transforming aflatoxin and the gene encodes thereof. Firstly a novel protein is isolated and purified, named aflatoxin-detoxifizyme (ADTZ), which has the activity of transforming aflatoxin. The ADTZ gene is obtained through specific primers, and the gene is purified and sequenced. The gene encoding of ADTZ is cloned from the total RNA of Armillariella tabescens. The recombinant protein is expressed and purified through various expression systems using genetic engineering methods. The said detoxifizyme has bioactivity of transforming AFB1, reducing mutagenic effects of AFB1. It has great potential for the manufacturing of feed or food and development of anti-tumor medicament.

Abstract: The present invention relates to a detoxifizyme with the activity of transforming aflatoxin and the gene encodes thereof. Inventors firstly isolate and purify a novel protein, named aflatoxin-detoxifizyme (ADTZ), which has the activity of transforming aflatoxin. The primes specify to the ADTZ gene are obtained through purification and sequencing. The gene encoding of ADTZ is cloned from the total RNA of Armillariella tabescens. The recombinant protein is expressed and purified through various expression systems using genetic engineering methods. The said detoxifizyme has bioactivity of transforming AFB1, reducing mutagenic effects of AFB1. It has great potential for the manufacturing of feed or food and development of anti-tumor medicament.