Abstract: This disclosure is a method for forming a carbon film on a substrate, and comprises: performing an ion implantation process on a substrate to form an ion-implanted region on a surface of the substrate; heating the substrate and performing a plasma pre-cleaning process on the substrate; forming a carbon film on the surface of the substrate; and then annealing the substrate at a high temperature. After performing the heating process and the plasma pre-cleaning process, moisture and dangling bonds on the substrate can be removed, which is conducive to forming a dense and smooth carbon film on the substrate to improve the protective effect of the carbon film on the substrate.

Abstract: This disclosure is a cleaning method for a deposition chamber. First, a purge gas is supplied into a deposition chamber, and molybdenum precursor remaining in the deposition chamber is extracted through a vacuum pump. Then, a hydrogen plasma is used to reduce a molybdenum trioxide deposit attached to the inner surface of the deposition chamber, and the molybdenum trioxide deposit is reduced to molybdenum particles and water vapor. The purge gas is again supplied into the deposition chamber, and molybdenum particles and water vapor is extracted through the vacuum pump. Through the method described in this invention, the molybdenum trioxide deposit attached to the inner surface of the deposition chamber and the residual molybdenum precursor can be effectively removed, and the number of particles in the deposition chamber can be reduced to improve the quality and yield of the subsequent thin film deposition process.

Abstract: The invention is a deposition equipment, which comprises a chamber, a shield, a fixing ring, a carrier, and a cooling device. One end of the shield is connected to the chamber, while the other end supports the fixing ring. The carrier is used to support a wafer. The carrier is located below the fixing ring and can drive the supported wafer to displace relative to the fixing ring and the shield. The cooling device is connected to the fixing ring, wherein the cooling device contains a cooling fluid and receives heat from the fixing ring through heat conduction to reduce the temperature of the fixing ring. By reducing the temperature of the fixing ring, the formation of a film at the interface between the fixing ring and the wafer can be avoided, and the adhesion between the fixing ring and the wafer can be effectively prevented.

Abstract: This invention relates to a wafer holder for providing even temperature distribution, which comprises a support assembly and a diffusion unit. The diffusion unit is made of a porous material and is disposed on a top surface of the support assembly. The diffusion unit includes a main body, a plurality of protrusions, and at least one diffusion channel, wherein the protrusions and the diffusion channel are disposed on a bearing surface of the main body. A gas is transmitted to the diffusion unit from an inlet pipeline of the support assembly, and then transmitted through pores of the diffusion unit to the bearing surface, and comes into contact with the wafer on the diffusion unit to adjust the temperature of the wafer, and is beneficial for improving the uniformity of the temperature distribution of the wafer.

Abstract: The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

Abstract: The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

Abstract: A wafer holder for generating a stable bias voltage, which mainly includes a holder, a ring member, and a cover ring, wherein a supporting surface of the holder is used to carry at least one wafer, and the ring member is arranged on the holder and located around the supporting surface and the wafer. The ring member includes an outer surface and an inner surface, wherein the inner surface of the ring member covers a part of the side surface of the holder and makes parts of the side surface exposed. When the cover ring is connected to the ring member, a shielding portion of the cover ring will cover the exposed side surface of the holder to avoid a film being formed on the exposed side surface of the holder to facilitate the formation of a uniform and stable bias voltage on the wafer holder.

Abstract: A masking structure for a wafer supporting plate comprises a cavity; a carrying tray having a plurality of recesses in a top surface thereof for receiving a plurality of wafers; the carrying tray can be transferred into and out of the cavity by using a robot; a supporting plate installed within the cavity and below the carrying tray; the supporting plate could move upwards, and downwards; a mask installed within the cavity and above the carrying tray; the mask formed with a plurality of through holes which are positioned and shaped to be corresponding to those of the wafers on the carrying tray; therefore, when the supporting plate lifts the carrying tray to be near the mask, the wafers are exposed out of the through holes.

Abstract: A vapor reduction device for a semiconductor wafer has a plurality of heat plates which are spaced arranged longitudinally for receiving a plurality of wafers, the heat plates are integrated into a heating frame which is further placed into a casing. The movements of the heat plates within the casing causes that the wafers can be heated rapidly and uniformly so as to evaporated vapor effectively. The heat plates are separable from the heating frame and thus a number of the heat plates is selectable as desired. The heating temperature for the heat plates is controllable independently so that the temperatures of the wafers are controllable so that the temperature differences of the wafers are controllable to be uniformly distributed.

Abstract: A plasma etching reaction chamber includes a casing having a receiving chamber; a base liftably installed below the receiving chamber; a first electrode and a second electrode; and a radio frequency electrode rod. The second electrode has a plurality of water channels and a bottom of the second electrode is installed with two cooling water tubes which are communicated with the plurality of water channels; upper sides of the two cooling water tubes are hidden within the driving rod and lower sides thereof extend downwards to be out of the casing so that external cooling water can flow into the cooling water tubes and then to the water channels to achieve the object of cooling.

Abstract: An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel. The pixel includes an anode conducting layer, an insulation layer, an emitting layer (EML), a cathode layer and a reference voltage layer. The anode conducting layer is disposed on a transparent substrate. The insulation layer is disposed on the anode conducting layer and has a first cavity and a second cavity, wherein there is a distance between the first anode layer and the bottom of second cavity. There are a hole injection layer (HIL) and a hole transmission layer (HTL). The HIL is disposed on the first anode conducting layer. The HTL is disposed on the HIL. There are a cathode layer, an electronic injection layer (EIL) and an electronic transmission layer (ETL) in the second cavity. The cathode layer is exposed by the bottom of the second cavity. The EIL is disposed on the cathode layer. The ETL is disposed on the EIL.

Abstract: An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel. The pixel includes an anode conducting layer, an insulation layer, an emitting layer (EML), a cathode layer and a reference voltage layer. The anode conducting layer is disposed on a transparent substrate. The insulation layer is disposed on the anode conducting layer and has a first cavity and a second cavity, wherein there is a distance between the first anode layer and the bottom of second cavity. There are a hole injection layer (HIL) and a hole transmission layer (HTL). The HIL is disposed on the first anode conducting layer. The HTL is disposed on the HIL. There are a cathode layer, an electronic injection layer (EIL) and an electronic transmission layer (ETL) in the second cavity. The cathode layer is exposed by the bottom of the second cavity. The EIL is disposed on the cathode layer. The ETL is disposed on the EIL.

Abstract: An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel. The pixel includes an anode conducting layer, an insulation layer, an emitting layer (EML), a cathode layer and a reference voltage layer. The anode conducting layer is disposed on a transparent substrate. The insulation layer is disposed on the anode conducting layer and has a first cavity and a second cavity, wherein there is a distance between the first anode layer and the bottom of second cavity. There are a hole injection layer (HIL) and a hole transmission layer (HTL). The HIL is disposed on the first anode conducting layer. The HTL is disposed on the HIL. There are a cathode layer, an electronic injection layer (EIL) and an electronic transmission layer (ETL) in the second cavity. The cathode layer is exposed by the bottom of the second cavity. The EIL is disposed on the cathode layer. The ETL is disposed on the EIL.

Abstract: An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel. The pixel includes a anode conducting layer, an insulation layer, an emitting layer (EML), a cathode layer and a reference voltage layer. The anode conducting layer is disposed on a transparent substrate. The insulation layer is disposed on the anode conducting layer and has a first cavity and a second cavity, wherein there is a distance between the first anode layer and the bottom of second cavity. There are a hole injection layer (HIL) and a hole transmission layer (HTL). The HIL is disposed on the first anode conducting layer. The HTL is disposed on the HIL. There are a cathode layer, an electronic injection layer (EIL) and an electronic transmission layer (ETL) in the second cavity. The cathode layer is exposed by the bottom of the second cavity. The EIL is disposed on the cathode layer. The ETL is disposed on the EIL.

Abstract: A headphone having a headband and two acoustic transducers disposed at two ends of the headband is disclosed. Each acoustic transducer includes a baffle plate installed with a speaker, a spacer, a vent and an acoustic modulator. The baffle plate and speaker divide the acoustic transducer into a front and a back chamber. The front chamber is configured for communicating with a user's ear. The spacer is disposed behind the speaker to divide the back chamber into a first back chamber and a second back communicated with each other. The vent is disposed in a back wall of the acoustic transducer to communicate the first back chamber with outside. The first acoustic modulator is disposed between the front and second back chambers. The headphone modulates resonance frequency at low frequency bands through the acoustic modulator.

Abstract: A headphone having a headband and two acoustic transducers disposed at two ends of the headband is disclosed. Each acoustic transducer includes a baffle plate installed with a speaker, a spacer, a vent and an acoustic modulator. The baffle plate and speaker divide the acoustic transducer into a front and a back chamber. The front chamber is configured for communicating with a user's ear. The spacer is disposed behind the speaker to divide the back chamber into a first back chamber and a second back communicated with each other. The vent is disposed in a back wall of the acoustic transducer to communicate the first back chamber with outside. The first acoustic modulator is disposed between the front and second back chambers. The headphone modulates resonance frequency at low frequency bands through the acoustic modulator.

Abstract: A gate driver and a display device are disclosed. The gate driver includes an image data receiving interface, an image processing unit, a timing controller, and a gate driving unit. The image data receiving interface receives an input signal and transfers the same to a display image signal and a display control signal. The image processing unit receives the display image signal and transfers the same to a display data. The timing controller transfers the display control signal into a first and second control signals. The first control signal and the display data are output to a source driver. The gate driving unit receives the second control signal to drive gate scanning lines accordingly, and the gate driving unit sequentially drives the gate scanning lines according to the second control signal. The source driver supplies the display data to pixels according to the first control signal.

Abstract: The present invention applies management frame defined in IEEE 802.11 standard to a wireless distribution system (WDS) mode by adding an information element (IE) into the management frame, which enables any access point (AP) in WDS to maintain IE based on its own setting and state, then send IE via the management frame for providing state of the AP under WDS mode, determine whether a physical link (i.e., a wireless link between APs) should be established therewith based on received IE, and maintain the established physical link through the wireless management frame in a real time manner. Thus, the existence and necessity of the physical link between different APs in WDS can be determined correctly.

Abstract: The present invention applies management frame defined in IEEE 802.11 standard to a wireless distribution system (WDS) mode by adding an information element (IE) into the management frame, which enables any access point (AP) in WDS to maintain IE based on its own setting and state, then send IE via the management frame for providing state of the AP under WDS mode, determine whether a physical link (i.e., a wireless link between APs) should be established therewith based on received IE, and maintain the established physical link through the wireless management frame in a real time manner. Thus, the existence and necessity of the physical link between different APs in WDS can be determined correctly.

Abstract: A method is provided. The method includes displaying a first image pixel on a first display pixel of a plurality of display pixels of a monitor, and displaying a second image pixel following the first image pixel on a portion of sub-pixels of the first display pixel and a portion of sub-pixels of a second display pixel so as to avoid loss of image data when displaying the image pixels on a monitor of a small resolution.