Abstract: The invention provides an oligonucleotide comprising a nucleotide sequence consisting of SEQ ID NO: 1. The invention also provides method for detecting target DNA in a sample with the oligonucleotide.

Abstract: The invention provides an oligonucleotide comprising a nucleotide sequence consisting of SEQ ID NO: 1. The invention also provides method for detecting target DNA in a sample with the oligonucleotide.

Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A?)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A? represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A?, Wlast and Wavg are set parameters built into the process control system.

Abstract: A method for forming an anti-reflection coating (ARC) with no hole over an overlay mark is described, which applies a fluid material of the ARC onto a substrate and then conducts at least two curing steps to convert the fluid material into the ARC. Such a bottom anti-reflection coating with no hole over the overlay mark can improve accuracy of the overlay measurement of lithography, thereby improving the alignment accuracy of the lithography process.

Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A?)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A? represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A?, Wlast and Wavg are set parameters built into the process control system.

Abstract: A first film layer is formed over a substrate. A portion of the first film layer is removed to form a first alignment mark pattern and a first conductive layer is formed to fill the first alignment mark pattern to form a first alignment mark. A second film layer is formed and a portion of the second film layer is removed to form openings and to form a second alignment mark pattern. A second conductive layer is formed to fill the openings to form first conductive wires and to fill the second alignment mark pattern to form a second alignment mark. A third film layer and a hard mask layer are formed over the second film layer and a portion of the hard mask layer and the third film layer is removed to form via openings. A third conductive layer is formed in the via openings.

Abstract: A stacked alignment mark. The stacked alignment mark comprises a first alignment mark and a second alignment mark. The first alignment mark is located in a first film layer, wherein the first alignment mark is composed of a plurality of conductive wires. The second alignment mark is located in a second film layer under the first film layer. The first alignment mark is located in a first region corresponding to a second region in which the second alignment mark is located. Moreover, the second alignment mark at least contains a third region directly under a space between each two adjacent first conductive wires.

Abstract: A first film layer is formed over a substrate. A portion of the first film layer is removed to form a first alignment mark pattern and a first conductive layer is formed to fill the first alignment mark pattern to form a first alignment mark. A second film layer is formed and a portion of the second film layer is removed to form openings and to form a second alignment mark pattern. A second conductive layer is formed to fill the openings to form first conductive wires and to fill the second alignment mark pattern to form a second alignment mark. A third film layer and a hard mask layer are formed over the second film layer and a portion of the hard mask layer and the third film layer is removed to form via openings. A third conductive layer is formed in the via openings.

Abstract: A stacked alignment mark. The stacked alignment mark comprises a first alignment mark and a second alignment mark. The first alignment mark is located in a first film layer, wherein the first alignment mark is composed of a plurality of conductive wires. The second alignment mark is located in a second film layer under the first film layer. The first alignment mark is located in a first region corresponding to a second region in which the second alignment mark is located. Moreover, the second alignment mark at least contains a third region directly under a space between each two adjacent first conductive wires.

Abstract: A roller device for attaching to a shaft of a treadmill, includes a tubular housing having two carriers engaged in the end portions, and the carriers each includes a casing directly folded from the end portion of the housing, and two bearing members are engaged in the casings of the carriers, for engaging with the shaft, and for smoothly and rotatably attaching the housing to the shaft, and for allowing the roller device to be easily and readily attached to treadmills. The casing includes an outer peripheral flap formed integral with the housing, and includes an outer diameter smaller than an inner diameter of the housing, for resiliently supporting the casing within the housing.

Abstract: A method for forming an anti-reflection coating (ARC) with no hole over an overlay mark is described, which applies a fluid material of the ARC onto a substrate and then conducts at least two curing steps to convert the fluid material into the ARC. Such a bottom anti-reflection coating with no hole over the overlay mark can improve accuracy of the overlay measurement of lithography, thereby improving the alignment accuracy of the lithography process.