Abstract: A text processing method includes: receiving text for describing a process of a task; obtaining a first sub-sentence group from the text for describing the process of the task, the first sub-sentence group including a plurality of sub-sentences arranged in an order in which the process occurs, and each of the plurality of sub-sentences including a workflow component; determining a workflow label corresponding to each sub-sentence in the first sub-sentence group; generating the workflow of the task based on the workflow labels corresponding to the plurality of sub-sentences in the first sub-sentence group; and generating a visual representation of the generated workflow for display by the workflow generation application.

Abstract: A method of obtaining a parameter of a synchronous motor is disclosed and includes: setting an operating current of the motor; providing a positive fixed voltage to the motor and monitoring a feedback current from the motor; recording a triggering time for the feedback current to reach the operating current; providing a negative fixed voltage to the motor for the triggering time; obtaining a square-wave voltage with a fixed frequency based on the positive fixed voltage and the negative fixed voltage being provided; providing the square-wave voltage with the fixed frequency to one axis of the motor; transforming three-phase current from the motor into an axial current; computing an inductance value of this axis based on the fixed frequency, the square-wave voltage and the axial current; and, creating an inductance-current parameter table based on a plurality of the inductance values and the axial currents correspondingly.

Abstract: A three-terminal power line fault location and correction system and method, and a computer readable storage medium. An electronic device is electrically connected with a plurality of terminal devices. When a fault occurs at a certain position of the power line, each terminal device detects the fault to generate a fault distance corresponding to the fault. The electronic device corrects the fault distance as follows: the corrected fault distance of one of the terminal devices=(an actual distance between the terminal device and a divergence point+a function of actual distances between the other two terminal devices and the divergence point)*the fault distance corresponding to the terminal device/(the fault distance corresponding to the terminal device+the fault distance corresponding to a function of the actual distances between the other two terminal devices and the divergence point).

Abstract: A light-emitting device array includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. A first beam shaping structure of the first light-emitting device is configured to convert light emitted by a first light-emitting structure of first light-emitting device into first structured light. A second beam shaping structure of the second light-emitting device is configured to convert light emitted by a second light-emitting structure of second light-emitting device into second structured light. Speckle patterns and spatial distributions of the first structured light and the second structured light on a projection plane are the same. A third beam shaping structure of the third light-emitting device is configured to convert light emitted by a third light-emitting structure of third light-emitting device into third structured light.

Abstract: Provided herein are methods and systems for identifying a related data values in a plurality of datasets. The method can include extracting data from the plurality of datasets, identifying potential linking categories, and determining a validity of the potential linking categories. One or more linking categories can be selected from the potential linking categories based on the validity, and related data values can be identified between the plurality of datasets based on the selected linking categories. Also provided herein are methods and systems for classifying data values as reconciled or non-reconciled. The method can include identifying a plurality of related data values in a plurality of datasets. For each of the plurality of related data values, a similarity score and confidence score can be determined, and the plurality of related data values can be classified as reconciled or non-reconciled based on the similarity score and/or the confidence score.

Abstract: A heat dissipation assembly is disclosed and includes a frame and a fan. The frame includes a heat conduction channel and an airflow intake. The heat conduction channel is communication with an exterior through airflow intake. The frame includes a first plane, a second plane and an inclined plane. The first plane is disposed adjacent to the airflow intake. The inclined plane is connected between the first plane and the second plane. The second plane includes an inlet. The heat conduction channel is in communication between the airflow intake and the inlet. A cross-section area of the heat conduction channel adjacent to the airflow intake is greater than that of the heat conduction channel adjacent to the inlet. The fan is spatially corresponding to the inlet, and assembled with the frame to form an outlet in communication with the airflow intake and the heat conduction channel through the inlet.

Abstract: Small interfering RNAs (siRNA) having specific modification patterns to improve interference efficiencies thereof. The modification patterns each comprises a combination of 2?-O methyl modification, 2?-O-fluoro-modification, and phosphorothioate (PS) bonds at defined positions in the sense strand and anti-sense strand of each siRNA, and optionally 5? phosphate modifications.

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Abstract: A method is provided. The method includes: receiving a semiconductor structure having a first material and a second material; performing a first etch on the first material for a first duration under a first etching chemistry; and performing a second etch on the second material for a second duration under a second etching chemistry, wherein the first material includes a first incubation time and the second material includes a second incubation time greater than the first incubation time under the first etching chemistry. The first material includes a third incubation time and the second material includes a fourth incubation time less than the third incubation time under the second etching chemistry.

Abstract: The present disclosure relates to a new process for construction of controlled structures on the surface of modified digital barcoded magnetic beads (BMB) with higher capacity, higher fluorescence intensity, wider dynamic range, and improved sensitivity in clinical applications.

Abstract: A display device has a display area and a peripheral area, and includes an array substrate. The array substrate includes M number of pixel unit columns disposed in the display area and a first dummy electrode disposed in the peripheral area, where M is a positive integer greater than or equal to 2. The M number of pixel unit columns include a first pixel unit column to an Mth pixel unit column arranged in sequence. Each of the M number of pixel unit columns includes a plurality of pixel units arranged in sequence. The first dummy electrode is located on one side of the first pixel unit column. During a frame period, the first pixel unit column receives the first pixel signal, and the first dummy electrode receives the first dummy signal. The polarity of the first pixel signal is different from that of the first dummy signal.

Abstract: A detecting system includes a camera and a processor. The camera is configured to capture a first target object to generate a first image and is configured to capture a second target object different from the first target object to generate a second image. The processor is configured to detect the first image by using a first model to generate a first result and is configured to train the first model by using the first result. When the processor trains the first model by using the first result, the camera captures the second target object. After the camera captures the second target object, the processor further trains the first model by using the second image.

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

Abstract: A touch light-emitting module having hallowed portion for incapsulation resin and a manufacturing method thereof are disclosed. The touch light-emitting module includes a printed circuit board and a touch-control conductor. The printed circuit board has a top surface on which a touch-control IC and a luminous unit that is electrically connected are disposed. The touch-control conductor includes a hollowed portion. The touch-control conductor is coated, on the bottom thereof, with a conductive material to combine with the top surface of the printed circuit board, so that the touch-control IC and the luminous unit are located in the hollowed portion. An encapsulation resin is then injected into a space between the printed circuit board and the hollowed portion to complete encapsulation. As such, the module offers a simplified structure to achieve an effect of minimization, and simplifies the manufacturing process and reduces the working time to thereby enhance the yield.

Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.

Abstract: An image sensor structure and methods of forming the same are provided. An image sensor structure according to the present disclosure includes a semiconductor substrate including a photodiode, a transfer gate transistor disposed over the semiconductor substrate and having a first channel area, a first dielectric layer disposed over the semiconductor substrate, a semiconductor layer disposed over the first dielectric layer, a source follower transistor disposed over the semiconductor layer and having a second channel area, a row select transistor disposed over the semiconductor layer and having a third channel area, and a reset transistor disposed over the semiconductor layer and having a fourth channel area. The second channel area is greater than the first channel area, the third channel area or the fourth channel area.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first wafer is provided. The first wafer includes a first substrate and a first device layer. A second wafer is provided. The second wafer includes a second substrate and a second device layer. The second device layer is bonded to the first device layer. An edge trimming process is performed on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface. The second upper surface is higher than the first upper surface. A first photoresist layer is formed. The first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region. The damaged region is removed by using the first photoresist layer as a mask. The first photoresist layer is removed.

Abstract: An image sensor module includes a sensing surface, a filter element and a first anti-reflective microstructure, wherein the filter element faces towards the sensing surface, and the first anti-reflective microstructure is disposed on the sensing surface. The filter element includes a substrate, an optical deposition layer structure and an optical coating layer, wherein the optical deposition layer structure is disposed on a side of the substrate away from the sensing surface, and the optical coating layer and the optical deposition layer structure are correspondingly disposed on a side of the substrate facing towards the sensing surface. The optical deposition layer structure is multilayer. An air layer is formed between the first anti-reflective microstructure and the filter element, and the first anti-reflective microstructure and the air layer partially overlap at a direction vertical to the sensing surface.

Abstract: A semiconductor device includes a gate structure on a substrate, a source/drain region adjacent to the gate structure, an interlayer dielectric (ILD) layer around the gate structure, a contact plug in the ILD layer and adjacent to the gate structure, an air gap around the contact plug, a barrier layer on and sealing the air gap, a metal layer on the barrier layer, a stop layer adjacent to the barrier layer and on the ILD layer, and an inter-metal dielectric (IMD) layer on the ILD layer. Preferably, bottom surfaces of the barrier layer and the stop layer are coplanar and top surfaces of the IMD layer and the barrier layer are coplanar.