Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.

Abstract: A speaker module includes a casing, a speaker unit and a vibration absorber. The speaker unit has a sound cavity. The speaker unit is disposed on the casing, and the speaker unit includes a first diaphragm. The vibration absorber is disposed in the casing, and the vibration absorber has a second diaphragm. When the first diaphragm vibrates, the airflow generated by the first diaphragm drives the second diaphragm to vibrate, and the vibration direction of the second diaphragm is opposite to the vibration direction of the first diaphragm, so as to absorb the vibration generated by the first diaphragm to the casing.

Abstract: A display panel and a display apparatus. The display panel includes: a substrate; an isolation structure arranged on the substrate, the isolation structure enclosing and forming an isolation opening and a light-transmitting opening; a light-emitting unit being configured in the isolation opening; a conductive layer at least partially arranged on a side of the isolation structure away from the substrate; and a shielding layer arranged on the substrate, the shielding layer including a shielding portion, and an orthographic projection of the shielding portion on the substrate at least partially overlapping with an orthographic projection of the light-transmitting opening on the substrate.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a gate structure on a substrate, forming a first spacer on the gate structure, forming a patterned mask on the gate structure and one side of the gate structure, removing the first spacer on another side of the gate structure, and then forming a source/drain region adjacent to two sides of the gate structure.

Abstract: A display panel includes a substrate, multiple scan lines, multiple data lines, and multiple pixel structures. The scan lines and the data lines are disposed on the substrate. The pixel structure is disposed on the substrate and electrically connected to the scan lines and the data lines, and includes an active device, a pixel electrode, a capacitor electrode, an overcoat layer, a first common electrode, a second common electrode, a first passivation layer, and a second passivation layer. The active device is electrically connected one scan line, one data line, and the pixel electrode. The capacitor electrode extends from a drain and is electrically connected to the pixel electrode. The overcoat layer is disposed between the pixel electrode and the capacitor electrode. The first common electrode overlaps the capacitor electrode, and is located between the overcoat layer and the capacitor electrode.

Abstract: Various techniques are provided for efficiently mapping synthesized components to physical hardware components of a PLD. In one example, a method includes receiving a design identifying operations to be performed by a programmable logic device (PLD). The method also includes converting the operations to a plurality of synthesized components. The method also includes mapping a selected one of the synthesized components to a model associated with first and second types of hardware components of the PLD. The selected synthesized component is compatible with first and second specifications of the first and second types of hardware components, respectively. The method also includes assigning the selected synthesized component to a physical location of the PLD comprising either the first type of hardware component or the second type of hardware component to improve a performance metric of the PLD configured with the design. Additional devices, systems and methods are also provided.

Abstract: The present disclosure provides a molding system for fabricating a FRP composite article. The molding system includes a detector, a resin dispenser, a processing module, and a molding machine. The detector is configured to capture a graph of a woven fiber from a top view. The resin dispenser is configured to provide a resin to the woven fiber to form a FRP. The processing module is configured to receive the graph and a plurality of parameters of the FRP. The processing module includes a CNN model, and is configured to use the CNN model to obtain a plurality of predicted mechanical properties of the FRP according to the graph and the plurality of parameters of the FRP. The molding machine is configured to mold the FRP to fabricate the FRP composite article according to the plurality of predicted mechanical properties.

Abstract: A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.

Abstract: A prosthetic heart valve configured to replace a native heart valve and having a support frame configured to be reshaped into an expanded form in order to receive and/or support an expandable prosthetic heart valve therein is disclosed, together with methods of using same. The prosthetic heart valve may be configured to have a generally rigid and/or expansion-resistant configuration when initially implanted to replace a native valve (or other prosthetic heart valve), but to assume a generally expanded form when subjected to an outward force such as that provided by a dilation balloon or other mechanical expander.

Abstract: A benzoxazine resin, including a compound of the following Formula 1-1: where R1, R2, and R3 are as defined herein.

Abstract: A memory device includes a field effect transistor and a variable-capacitance capacitor. A gate structure includes a gate dielectric and an intermediate electrode. The variable-capacitance capacitor includes a lower capacitor plate comprising the intermediate electrode, an upper capacitor plate comprising a control gate electrode, and a variable-capacitance node dielectric and including an electrical-field-programmable metal oxide material. The electrical-field-programmable metal oxide material provides a variable effective dielectric constant, and a data bit may be stored as a dielectric state of the variable-capacitance node dielectric in the memory device. The variable-capacitance node dielectric provides reversible electrical field-dependent resistivity modulation, or reversible electrical field-dependent movement of metal atoms therein.

Abstract: A resin, including a compound having the following Formula 1-1: wherein n ranges from 1 to 5, and R1, R2, R3 and R4 are as defined herein.

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.

Abstract: The present application provides a detaching and installing device for a gas distribution plate of an etching machine, and the etching machine, and relates to the field of semiconductor manufacturing technologies, aiming at addressing the problems that it is quite difficult to detach and install the gas distribution plate of the etching machine and that the gas distribution plate is highly likely to be polluted. The detaching and installing device for the gas distribution plate of the etching machine includes a gripping member, a connecting member and a fixing member, the fixing member is detachably connected to the gas distribution plate of the etching machine, and the gripping member and the fixing member are connected through the connecting member; the gripping member is provided thereon with a gripping portion for grip by a user hand.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: The embodiments of the disclosure provide a method for setting subband full duplex (SBFD) resource and user equipment (UE). The method includes: receiving a first configuration from a network device, wherein the first configuration indicates a plurality of transmission directions for a time period; receiving a second configuration from the network device, wherein the second configuration indicates at least one SBFD resource within the time period; receiving a third configuration from the network device, wherein the third configuration indicates a downlink bandwidth part and an uplink bandwidth part; performing a communication operation with the network device according to the first configuration, the second configuration, and the third configuration.

Abstract: The embodiments of the disclosure provide a method for setting subband full duplex (SBFD) resource and user equipment (UE). The method includes: receiving a first configuration from a network device, wherein the first configuration indicates a plurality of first transmission directions for a time period; receiving a second configuration from the network device, wherein the second configuration indicates at least one SBFD resource within the time period; receiving a downlink control information (DCI) from the network device, wherein the DCI indicates at least one second transmission directions for at least one slot within the time period; and performing a communication operation with the network device according to the first configuration, the second configuration, and the DCI.

Abstract: An SRAM cell includes a first n-type channel (n-channel) layer engaged with a first gate layer to form a first device; a first p-type channel (p-channel) layer engaged with the first gate layer to form a second device, the first gate layer stacked between the first n-channel layer and the first p-channel layer along a first direction; a second n-channel layer engaged with a second gate layer to form a third device, the second gate layer coupled to a first word line and the second n-channel layer coupled to the first n-channel layer along a second direction perpendicular to the first direction; a third n-channel layer engaged with a third gate layer to form a fourth device, the third n-channel layer spaced from the second n-channel layer along a third direction perpendicular to the first direction and the second direction; a second p-channel layer engaged with the third gate layer to form a fifth device, the third gate layer stacked between the third n-channel layer and the second p-channel layer along the fir

Abstract: The embodiments of the disclosure provide a method for setting subband full duplex (SBFD) resource and user equipment (UE). The method includes: receiving a first configuration from a network device, wherein the first configuration indicates a plurality of transmission directions for a time period; receiving a second configuration from the network device, wherein the second configuration indicates at least one SBFD resource within the time period; and performing a communication operation with the network device according to the first configuration and the second configuration.

Abstract: A drainage device having a catheter and a control valve, the control valve having a valve body and a resilient switch controlling the valve body, the valve body being connected to the catheter, the resilient switch being provided in the catheter, and characterized in that: the user can deform the resilient switch to adjust the opening of the valve body by pressing the catheter or pressing a body part having a cavity accommodating the catheter, and can further compel the resilient switch into a recovery-blocked status; and the user can release the recovery-blocked status by bending or shaking the catheter or bending or shaking the body part accommodating the catheter.