Patents by Inventor Chung-Bin Tseng
Chung-Bin Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220359781Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.Type: ApplicationFiled: July 25, 2022Publication date: November 10, 2022Inventors: Chih Wei Sung, Chung-Bin Tseng, Keng-Ying Liao, Yen-Jou Wu, Po-Zen Chen, Su-Yu Yeh, Ching-Chung Su
-
Patent number: 11430909Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.Type: GrantFiled: May 4, 2020Date of Patent: August 30, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih Wei Sung, Chung-Bin Tseng, Keng-Ying Liao, Yen-Jou Wu, Po-Zen Chen, Su-Yu Yeh, Ching-Chung Su
-
Publication number: 20210036179Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.Type: ApplicationFiled: May 4, 2020Publication date: February 4, 2021Inventors: Chih Wei Sung, Chung-Bin Tseng, Keng-Ying Liao, Yen-Jou Wu, Po-Zen Chen, Su-Yu Yeh, Ching-Chung Su
-
Patent number: 10665466Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.Type: GrantFiled: December 13, 2018Date of Patent: May 26, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Keng-Ying Liao, Chung-Bin Tseng, Po-Zen Chen, Yi-Hung Chen, Yi-Jie Chen
-
Patent number: 10658269Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.Type: GrantFiled: April 19, 2019Date of Patent: May 19, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tsung-Han Tsai, Volume Chien, Yung-Lung Hsu, Chung-Bin Tseng, Keng-Ying Liao, Po-Zen Chen
-
Publication number: 20190252295Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.Type: ApplicationFiled: April 19, 2019Publication date: August 15, 2019Inventors: TSUNG-HAN TSAI, VOLUME CHIEN, YUNG-LUNG HSU, CHUNG-BIN TSENG, KENG-YING LIAO, PO-ZEN CHEN
-
Patent number: 10269684Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.Type: GrantFiled: November 16, 2017Date of Patent: April 23, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tsung-Han Tsai, Volume Chien, Yung-Lung Hsu, Chung-Bin Tseng, Keng-Ying Liao, Po-Zen Chen
-
Publication number: 20190115222Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.Type: ApplicationFiled: December 13, 2018Publication date: April 18, 2019Inventors: Keng-Ying LIAO, Chung-Bin TSENG, Po-Zen CHEN, Yi-Hung CHEN, Yi-Jie CHEN
-
Patent number: 10163646Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.Type: GrantFiled: February 27, 2017Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Keng-Ying Liao, Chung-Bin Tseng, Po-Zen Chen, Yi-Hung Chen, Yi-Jie Chen
-
Patent number: 10056316Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.Type: GrantFiled: November 27, 2017Date of Patent: August 21, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tsung-Han Tsai, Volume Chien, Yung-Lung Hsu, Chung-Bin Tseng, Keng-Ying Liao, Po-Zen Chen
-
Patent number: 10008530Abstract: Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The BSI image sensor includes a semiconductive substrate, a deep trench isolation (DTI) at a back side of the semiconductive substrate, and a dielectric layer. the dielectric layer includes a top portion over the back side, and a side portion lined to a sidewall of the DTI. The BSI image sensor includes a planarization stop layer disposed conformally on top of the dielectric layer. The planarization stop layer includes a top section on the top portion, a side section lined against the side portion, and a first transmittance. The BSI image sensor includes a low-transparent material inside the DTI, and the low-transparent material includes a second transmittance. The second transmittance is lower than the first transmittance.Type: GrantFiled: January 30, 2015Date of Patent: June 26, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Keng-Ying Liao, Chung-Bin Tseng, Cheng-Hsien Chou, Jiech-Fun Lu, Po-Zen Chen, Yi-Hung Chen
-
Publication number: 20180082928Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.Type: ApplicationFiled: November 27, 2017Publication date: March 22, 2018Inventors: TSUNG-HAN TSAI, VOLUME CHIEN, YUNG-LUNG HSU, CHUNG-BIN TSENG, KENG-YING LIAO, PO-ZEN CHEN
-
Publication number: 20180082927Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.Type: ApplicationFiled: November 16, 2017Publication date: March 22, 2018Inventors: TSUNG-HAN TSAI, VOLUME CHIEN, YUNG-LUNG HSU, CHUNG-BIN TSENG, KENG-YING LIAO, PO-ZEN CHEN
-
Patent number: 9831154Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.Type: GrantFiled: July 14, 2014Date of Patent: November 28, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tsung-Han Tsai, Volume Chien, Yung-Lung Hsu, Chung-Bin Tseng, Keng-Ying Liao, Po-Zen Chen
-
Patent number: 9691809Abstract: Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness.Type: GrantFiled: June 28, 2013Date of Patent: June 27, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jeng Chang Her, Hung Jui Chang, Li Te Hsu, Chung-Bin Tseng
-
Publication number: 20170170024Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.Type: ApplicationFiled: February 27, 2017Publication date: June 15, 2017Inventors: Keng-Ying LIAO, Chung-Bin TSENG, Po-Zen CHEN, Yi-Hung CHEN, Yi-Jie CHEN
-
Patent number: 9583356Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.Type: GrantFiled: September 30, 2015Date of Patent: February 28, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Keng-Ying Liao, Chung-Bin Tseng, Po-Zen Chen, Yi-Hung Chen, Yi-Jie Chen
-
Publication number: 20160225813Abstract: Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The BSI image sensor includes a semiconductive substrate, a deep trench isolation (DTI) at a back side of the semiconductive substrate, and a dielectric layer. the dielectric layer includes a top portion over the back side, and a side portion lined to a sidewall of the DTI. The BSI image sensor includes a planarization stop layer disposed conformally on top of the dielectric layer. The planarization stop layer includes a top section on the top portion, a side section lined against the side portion, and a first transmittance. The BSI image sensor includes a low-transparent material inside the DTI, and the low-transparent material includes a second transmittance. The second transmittance is lower than the first transmittance.Type: ApplicationFiled: January 30, 2015Publication date: August 4, 2016Inventors: KENG-YING LIAO, CHUNG-BIN TSENG, CHENG-HSIEN CHOU, JIECH-FUN LU, PO-ZEN CHEN, YI-HUNG CHEN
-
Publication number: 20160013118Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.Type: ApplicationFiled: July 14, 2014Publication date: January 14, 2016Inventors: TSUNG-HAN TSAI, VOLUME CHIEN, YUNG-LUNG HSU, CHUNG-BIN TSENG, KENG-YING LIAO, PO-ZEN CHEN
-
Publication number: 20140263958Abstract: Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness.Type: ApplicationFiled: June 28, 2013Publication date: September 18, 2014Inventors: Jeng Chang Her, Hung Jui Chang, Li Te Hsu, Chung-Bin Tseng