Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A lighting module, an electronic device, and a display panel are provided. The lighting module includes a carrier, a first metal circuit layer, a first transparent conductive layer, a first insulating layer, a second transparent conductive layer, a second metal circuit layer, a bonding structure layer, and a plurality of lighting units. The bonding structure layer is configured to allow the second metal circuit layer to be well bonded to the first insulating layer, so that a resistance value of the lighting module is decreased, and a pressure drop is reduced.

Abstract: A light emitting diode includes a casing, comprising a concave accommodation space; a lead frame, disposed in the casing, wherein the lead frame has at least two individual leads which extend into the accommodation space; a light emitting chip, disposed in the accommodation space and electrically connected to the leads; and an encapsulating material, inside the accommodation space. The light emitting diode emits light along an optical axis. The ratio of a first tilt angle between the first reflecting wall and the optical axis, and a second tilt angle to a second tilt angle between the second reflecting wall and the optical axis is no more than 4.

Abstract: An optoelectronic semiconductor component includes a housing including a light exit opening, a first semiconductor chip installed inside the housing for emitting light, and a second semiconductor chip located at a position inside the housing. A distance between the second semiconductor chip and the light exit opening is greater than a distance between the first semiconductor chip and the light exit opening.

Abstract: An optoelectronic semiconductor component applies to a surface mount component of an optoelectronic semiconductor. The optoelectronic semiconductor component has one or more semiconductor chip secured on a chip carrier. The chip carrier is a part of a lead frame, and another part of the lead frame is formed with an independent connection part as a contact of the semiconductor chip. An encapsulation body centers on the semiconductor chip and encircles part of the chip carrier and the independent connection part to form an annular ellipsoid for reflecting or receiving radiation of the semiconductor chip. The encapsulation body has a recess and a window part filling the recess. The window part is composed of materials for transforming the optical characteristics of the semiconductor chip. Part of the chip carrier and the independent connection part extend out the encapsulation body to form outside contacts as a SMT component.

Abstract: An optoelectronic semiconductor component applies to a surface mount component of an optoelectronic semiconductor. The optoelectronic semiconductor component has one or more semiconductor chip secured on a chip carrier. The chip carrier is a part of a lead frame, and another part of the lead frame is formed with an independent connection part as a contact of the semiconductor chip. An encapsulation body centers on the semiconductor chip and encircles part of the chip carrier and the independent connection part to form an annular ellipsoid for reflecting or receiving radiation of the semiconductor chip. The encapsulation body has a recess and a window part filling the recess. The window part is composed of materials for transforming the optical characteristics of the semiconductor chip. Part of the chip carrier and the independent connection part extend out the encapsulation body to form outside contacts as a SMT component.