Abstract: A manufacturing method of a transistor includes at least the following steps. An insulating layer is provided. A source/drain material layer is formed on the insulating layer to cover top surface and sidewalls of the insulating layer. A portion of the source/drain material layer is removed until the insulating layer is exposed, so as to form a source region and a drain region respectively on two opposite sidewalls of the insulating layer. A channel layer is deposited on the insulating layer, the source region, and the drain region. A ferroelectric layer is formed over the channel layer through a non-plasma deposition process. A gate electrode is formed on the ferroelectric layer. The gate electrode, the ferroelectric layer, and the channel layer are patterned to expose at least a portion of the insulating layer, at least a portion of the source region, and at least a portion of the drain region.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a silicon oxycarbonitride spacer, a silicon oxycarbide spacer, a silicon nitride spacer, and a source/drain structure. The gate structure is on the semiconductor substrate. The silicon oxycarbonitride spacer is on a sidewall of the gate structure. The silicon oxycarbide spacer is on a sidewall of the silicon oxycarbonitride spacer. The silicon nitride spacer is on a sidewall of the silicon oxycarbide spacer, in which an upper portion of the silicon nitride spacer has a lower density than a lower portion of the silicon nitride spacer. The source/drain structure is on the semiconductor substrate and adjacent to the gate structure.

Abstract: A device includes a substrate, a first semiconductor channel over the substrate, and a second semiconductor channel over the substrate and laterally separated from the first semiconductor channel. A gate structure covers and wraps around the first semiconductor channel and the second semiconductor channel. A first source/drain region abuts the first semiconductor channel on a first side of the gate structure, and a second source/drain region abuts the second semiconductor channel on the first side of the gate structure. An isolation structure is under and between the first source/drain region and the second source/drain region, and includes a first isolation region in contact with bottom surfaces of the first and second source/drain regions, and a second isolation region in contact with sidewalls of the first and second source/drain regions, and extending from a bottom surface of the first isolation region to upper surfaces of the first and second source/drain regions.

Abstract: A semiconductor memory structure includes a gate structure, a ferroelectric layer over the gate structure, a channel layer over the ferroelectric layer, an intervening structure between the ferroelectric layer and the channel layer, and a source structure and a drain structure separated from each other over the channel layer. A thickness of the intervening structure is less than a thickness of the channel layer and less than a thickness of the ferroelectric layer. The channel layer and the intervening structure include different materials.

Abstract: A semiconductor memory structure includes a ferroelectric layer and a channel layer formed over the ferroelectric layer. The structure also includes a source structure and a drain structure formed over the channel layer. The structure further includes a first isolation structure formed between the source structure and the drain structure. The source structure extends over the cap layer and towards the drain structure.

Abstract: A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

Abstract: A layout method includes generating a design data comprising an electronic circuit, and generating a design layout by placing a first cell corresponding to the electronic circuit. The first cell includes a first source/drain region and a second source/drain region extending in a first direction in a first layer, a gate electrode extending in a second direction perpendicular to the first direction in a second layer, and a first conductive line arranged in a third layer over the second layer and electrically connected to one of the first source/drain region, the second source/drain region and the gate electrode. The first cell is defined by a left cell side and a right cell side. At least one of the left cell side, the right cell side, the gate electrode and the first conductive line extends in a third direction not parallel to the first and second directions.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: A packet identification system and a packet identification method are provided. The packet identification system receives a target packet, and includes a first packet header analyzer, a host, and a second packet header analyzer. The first packet header analyzer is configured to preset a plurality of first packet header formats, and identifies whether or not the target packet is one of a plurality of first packet types according to the first packet header formats. The host is configured to dynamically set at least one second packet header format. The second packet header analyzer is communicatively connected to the host. The second packet header analyzer is configured to store the at least one second packet header format, and identifies whether or not the target packet is at least one second packet type according to the at least one second packet header format.

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

Abstract: A frame rate control method is provided. A primary scenario and a non-primary scenario are identified according to two or more windows displayed on a screen. Each of the primary scenario and the non-primary scenario is performed by an individual application. A frame rate of the non-primary scenario is decreased when a performance index indicates that a first condition is present. The application corresponding to the non-primary scenario is disabled when the performance index indicates that a second condition is present after decreasing the frame rate of the non-primary scenario, so as to remove the window corresponding to the non-primary scenario from the screen.

Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: A layout method includes generating a design data comprising an electronic circuit, and generating a design layout by placing a first cell corresponding to the electronic circuit. The first cell includes a first source/drain region and a second source/drain region extending in a first direction in a first layer, a gate electrode extending in a second direction perpendicular to the first direction in a second layer, and a first conductive line arranged in a third layer over the second layer and electrically connected to one of the first source/drain region, the second source/drain region and the gate electrode. The first cell is defined by a left cell side and a right cell side. At least one of the left cell side, the right cell side, the gate electrode and the first conductive line extends in a third direction not parallel to the first and second directions.

Abstract: A chip comprises a plurality of signal receiving circuits, a transceiver circuit and a memory circuit. The plurality of signal receiving circuits are set at different locations on the chip. The transceiver circuit includes a dynamic switch circuit and a baseband processor. The dynamic switch circuit is configured to output a to-be-analyzed signal from the one of the plurality of signal receiving circuits. The baseband processor is configured to obtain a frequency spectrum and magnitude of the to-be-analyzed signal, and obtain a data packet of an input radio-frequency signal received by an external antenna. The memory circuit is configured to store the frequency spectrum and magnitude of the to-be-analyzed signal, and transmit the frequency spectrum and magnitude to an external computing device, so as to determine an interference path, an interference source or a combination thereof of an interference signal of the transceiver circuit through the external computing device.

Abstract: A method and a system for recording an integrated circuit version are provided. The method is adapted to a register in an integrated circuit, which includes the following steps: recording the integrated circuit version with N bits, in which N is an integer greater than 1; and amending only a bit value of at least one bit selected from the N bits that have not been used for denoting any past integrated circuit version each time when the integrated circuit is revised.

Abstract: An automatic detection circuit for an integrated circuit and an automatic detection method for the same are provided. The automatic detection circuit is suitable for a system-on-chip (SoC). A control unit of the automatic detection circuit enters an automatic detection mode to: switch a first dynamic switching circuit to connect a main bus to a virtual host circuit; switch a second dynamic switching circuit to connect memory interfaces and intellectual property circuit to a virtual input and output circuit; send detection vectors to the virtual host circuit to set and activate the memory interfaces and the intellectual property circuits; send the detection vectors to the virtual I/O circuit to replace external memory and external equipment for sending and receiving signals; and compare signals received by the virtual host circuit or signals received by the virtual input and output circuit with predetermined signal data to generate a detection result.

Abstract: A method and a system for recording an integrated circuit version are provided. The method is adapted to a register in an integrated circuit, which includes the following steps: recording the integrated circuit version with N bits, in which N is an integer greater than 1; and amending only a bit value of at least one bit selected from the N bits that have not been used for denoting any past integrated circuit version each time when the integrated circuit is revised.

Abstract: An automatic detection circuit for an integrated circuit and an automatic detection method for the same are provided. The automatic detection circuit is suitable for a system-on-chip (SoC). A control unit of the automatic detection circuit enters an automatic detection mode to: switch a first dynamic switching circuit to connect a main bus to a virtual host circuit; switch a second dynamic switching circuit to connect memory interfaces and intellectual property circuit to a virtual input and output circuit; send detection vectors to the virtual host circuit to set and activate the memory interfaces and the intellectual property circuits; send the detection vectors to the virtual I/O circuit to replace external memory and external equipment for sending and receiving signals; and compare signals received by the virtual host circuit or signals received by the virtual input and output circuit with predetermined signal data to generate a detection result.

Abstract: The application discloses a router coupled to a first device and a second device. The router includes a first packet input interface, a second packet input interface, a first register, a second register, a control circuit and a switch module. The switch module includes a control port, a first packet output interface and a second packet output interface. The application further discloses a routing method. The router and routing method saves idle time and improves quality of service.