Abstract: An antenna and an electronic device including the antenna are provided. The antenna includes a pair of radiators, a pair of feeding elements, first and second feeding ports. The radiators are located beside a geometric origin and separated from each other. The geometric origin is located between the radiators. The feeding elements are located below the pair of radiators and are configured to feed signals to the radiators. The pair of feeding elements includes a first feeding element and a second feeding element that are separated from each other. The first feeding element has a first geometric configuration. The second feeding element has a second geometric configuration that is asymmetric to the first geometric configuration. The first feeding port is electrically connected to the first feeding element. The second feeding port is separated from the first feeding port and electrically connected to the second feeding element.

Abstract: An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.

Abstract: Processes for obtaining a semiconductor nanodevice comprising a substrate, onto which patterned metal-oxide thin films having semiconductor properties are deposited, are provided, as well as semiconductor devices comprising them. The present invention belongs to the field of semiconductor nanodevices.