Abstract: Semiconductor dies of a semiconductor die package are directly bonded, and a top metal region may be formed over the semiconductor dies. A plurality of conductive terminals may be formed over the top metal region. The conductive terminals are formed of copper (Cu) or another material that enables low-temperature deposition process techniques, such as electroplating, to be used to form the conductive terminal. In this way, the conductive terminals of the semiconductor die packages described herein may be formed at a relatively low temperature. This reduces the likelihood of thermal deformation of semiconductor dies in the semiconductor die packages. The reduced thermal deformation reduces the likelihood of warpage, breakage, and/or other types of damage to the semiconductor dies of the semiconductor die packages, which may increase performance and/or increase yield of semiconductor die packages.

Abstract: A multi-channel payment method for a multi-channel payment system comprises the payer or the payee who initiated the payment request logs in to the multi-channel payment system; the payer or the payee who initiated the payment request placing an order in the multi-channel payment system, wherein the order comprises a designated payment gateway; the multi-channel payment system determining a predicted fee of the order according to the designated payment gateway, past order records, and a real-time exchange rate; the multi-channel payment system performing an anti-money laundering verification of the order; the payer reviewing the order and the predicted fee through a multiple auditing method; and the multi-channel payment system executing payment from the payer to the payee according to the order and the designated payment gateway, and storing a payment detail of the order.

Abstract: A biological particle enrichment apparatus and a pico-droplet generator thereof are provided. The pico-droplet generator includes a container, a hollow needle connected to the container, a first piezoelectric member disposed on the container, and a second piezoelectric member disposed on the hollow needle. The container can receive a liquid specimen having biological particles. The hollow needle and the container are fluid communicated with each other, and an inner diameter of the container is within a range from 5 times to 30 times of an inner diameter of the hollow needle. The first piezoelectric member is annularly disposed on a surrounding lateral side of the container, and enables the biological particles in the container to move along a direction away from the surrounding lateral side by vibrating the container. The second piezoelectric member can squeeze the hollow needle, so that the liquid specimen flows outwardly to form a pico-droplet.

Abstract: A biological particle analysis method is provided and includes the following steps: fluorescence staining a liquid specimen through a fluorescence staining process so as to enable a target biological particle in the liquid specimen to becomes a fluorescence; accommodating the liquid specimen into a pico-droplet generator and using a camera device to take a real-time image of the liquid specimen; using the pico-droplet generator to output a target pico-droplet having the target biological particle onto a biochip according to the real-time image; removing the fluorescent color of the target biological particle in the target pico-droplet through a washing process; and fluorescence staining the target biological particle captured by the biochip at multiple times through the fluorescence staining process and the washing process, so as to obtain a plurality of fluorescence images respectively corresponding to multiple kinds of biological characterization expressions.

Abstract: A method of manufacturing a semiconductor structure includes forming an active region having a first portion which is doped. The method further includes forming a first silicide layer over and electrically coupled to the first portion of the active region. The method further includes forming a second silicide layer under and electrically coupled to the first portion of the active region. The method further includes forming a first metal-to-drain/source (MD) contact structure over and electrically coupled to the first silicide layer. The method further includes forming a first via-to-MD (VD) structure over and electrically coupled to the MD contact structure. The method further includes forming a buried via-to-source/drain (BVD) structure under and electrically coupled to the second silicide layer.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.

Abstract: A method of controlling movement of an autonomous mobile apparatus including a driving module, a processor, and a positioning module includes steps of: the processor moving the autonomous mobile apparatus at a default speed from a first location toward a second location along a straight path; the positioning module obtaining data related to a current location; when the processor determines that a distance between the current location and the second location is greater than a predetermined distance, the processor obtaining a deviating direction and a minimum distance of the current location relative to the straight path; the processor setting a movement speed and an angular velocity based on the deviating direction, a tolerant distance, the minimum distance, and the default speed; and the processor controlling the driving apparatus to move the autonomous mobile apparatus at the movement speed and turning the autonomous mobile apparatus at the angular velocity.

Abstract: A semiconductor device includes a substrate having a first device and a second device, where at least one of the first device and the second device includes a photo-sensitive element. The semiconductor device includes a first isolation feature surrounding the first device, where the first isolation feature has a first depth. The semiconductor device includes a second isolation feature surrounding the second device, where the second isolation feature has a second depth and where the first depth is greater than the second depth.

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

Abstract: A method for forming a semiconductor device includes providing a semiconductor substrate, implanting n-type impurities into a device region in the semiconductor substrate to form an implanted region and an un-implanted region. The method also includes forming an epitaxial layer on the semiconductor substrate and forming a trench surrounding the device region in direct contact with the implanted region. The method further includes performing a selective lateral etch through the trench to remove the implanted region to form a cavity under the epitaxial layer. The un-implanted region is retained to form a pillar under the epitaxial layer. Next, an insulating material is disposed in the cavity and the trench. The method forms a single crystalline region that is separated from the semiconductor substrate by the insulating material except at the pillar.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: Semiconductor devices and methods of manufacture are provided whereby fences are formed over a substrate and III-V materials are grown over the substrate, wherein the fences block growth of the III-V materials. As such, smaller areas of the III-V materials are grown, thereby preventing stresses that occur with the growth of larger sheets.

Abstract: A measurement pattern for monitoring overlay shift of bonded wafers includes a top wafer pattern and a bottom wafer pattern. The top wafer pattern includes a first portion with a width Wx1 measured along a first axis. The bottom wafer pattern includes a first part with a width Wx2 measured along the first axis, wherein the first portion of the top wafer pattern and the first part of the bottom wafer pattern are separated by a target distance Dx, and wherein the measurement pattern satisfies the following measurement formulas: Tx>Dx?Sx; Tx<Dx?Sx+Wx2; Tx>Sx; Tx<Dx?Sx+Wx1; wherein, Tx represents a searching distance for finding an end-point of the first portion or an end-point of the first part; and Sx represents an actual shifting amount of the first portion.

Abstract: An end fitting for an exhaust pipe includes a cylindrical body having an upper opening and a lower opening. An inclined upper board is mounted in the cylindrical body. An upper passage is defined between a side of the upper board and an inner periphery of the cylindrical body. A first set of drain holes is defined in the lowest portion of the upper board. An inclined lower board is mounted in the cylindrical body and is located below the upper board. A lower passage is defined between a side of the lower board and the inner periphery of the cylindrical body. The lowest portion of the lower board is connected to the cylindrical body. The cylindrical body includes a cylindrical wall having a second set of drain holes. A ledge extends from the inner periphery of the cylindrical body and is located below the lower board.

Abstract: An apparatus for storing and transporting semiconductor elements includes a first portion and a second portion. The first portion includes a first front side wall, a first rear side wall, a top wall, and at least one pin holder integrally extending from the first rear side wall. The second portion includes a second front side wall, a second rear side wall, a bottom wall, and at least one pivotal pin structure integrally coupled with and extending from the second rear side wall. The at least one pivotal pin structure comprises a shaft, and a head connected with the shaft. The at least one pin holder defines a cavity sized and shaped to accept the head of the at least one pivotal pin structure. The first portion and the second portion are pivotally movable between an open configuration and a closed container configuration.

Abstract: A group III-V device structure is provided. The group III-V device structure includes a channel layer formed over a substrate and an active layer formed over the channel layer. The group III-V device structure also includes a gate structure formed over the active layer and a source electrode and a drain electrode formed over the active layer. The source electrode and the drain electrode are formed on opposite sides of the gate structure. The group III-V device structure further includes a through via structure formed through the channel layer, the active layer and a portion of the substrate, and the through via structure is electrically connected to the source electrode or the drain electrode.

Abstract: An IoT water purification system includes a water purification device and a cloud management device. The water purification device includes a filter element, a water tank, a water quantity sensing circuit, a filter element sensing circuit, and a water purification side wireless transmission circuit. The water quantity sensing circuit measures a current storage quantity of the drinking water to generate respective water quantity information. The filter element sensing circuit measures a water quality of the tap water to generate water quality information. The cloud management device includes a cloud wireless transmission circuit and a cloud processing circuit.