Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: An embodiment of an integrated circuit chip includes a combination processing core and magnetoresistive random access memory (MRAM) circuitry integrated into the chip. The MRAM circuitry includes a plurality of MRAM cells. The MRAM cells are organized into a number of memories, including a cache memory, a main or working memory and an optional secondary storage memory. The cache memory includes multiple cache levels.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

Abstract: A memory device includes a multi-layer stack, a channel layer, a memory material layer and at least three conductive pillars. The multi-layer stack is disposed on a substrate and includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The channel layer and memory material layer penetrate through the plurality of conductive layers and the plurality of dielectric layers. The at least three conductive pillars are surrounded by the channel layer and the memory material layer, wherein the at least three conductive pillars are electrically connected to conductive layers respectively. The at least three conductive pillars includes a first, a second and a third conductive pillars disposed between the first conductive pillar and the second conductive pillar. A third width of the third conductive pillar is smaller than a first width of the first conductive pillar and a second width of the second conductive pillar.

Abstract: A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Abstract: A display system for displaying a panoramic image and an operation method thereof are provided. The display system for displaying a panoramic image includes N projectors and a controller. The N projectors project N sub-images according to N image data and form a panoramic image. Each sub-image has a sub-image overlapping area, so that two adjacent sub-images of the N sub-images partially overlap, and that a first sub-image and an Nth sub-image of the N sub-images partially overlap. The controller copies a first edge image corresponding to a first edge of an original image and connects the first edge image to a second edge of the original image that is opposite to the first edge, so as to generate an extended image corresponding to the sub-image overlapping area. The controller slices an adjusted image containing the original image and the extended image to generate the N image data.

Abstract: A display system for displaying a panoramic image and an operation method thereof are provided. The display system for displaying a panoramic image includes N projectors and a controller. The N projectors project N sub-images according to N image data and form a panoramic image. Each sub-image has a sub-image overlapping area, so that two adjacent sub-images of the N sub-images partially overlap, and that a first sub-image and an Nth sub-image of the N sub-images partially overlap. The controller copies a first edge image corresponding to a first edge of an original image and connects the first edge image to a second edge of the original image that is opposite to the first edge, so as to generate an extended image corresponding to the sub-image overlapping area. The controller slices an adjusted image containing the original image and the extended image to generate the N image data.

Abstract: A diffusion rotating device disposed on a transmission path of a light beam is provided. The diffusion rotating device includes a substrate, a rotating axis and a driving element. The rotating axis is connected to the substrate. The driving element is connected to the rotating axis, and drives the rotating axis to rotate. The substrate includes a first diffusion region and an optical region disposed adjacent to each other, and the first diffusion region has multiple first diffusion sub-regions, each of the first diffusion sub-regions extends along a circumferential direction of the substrate and the first diffusion sub-regions are arranged concentrically along a radial direction of the substrate, when the first diffusion region is cut into the transmission path of the light beam, the light beam forms a first light spot on the first diffusion region of the substrate. A projection device is also provided.

Abstract: A diffusion rotating device disposed on a transmission path of a light beam is provided. The diffusion rotating device includes a substrate, a rotating axis and a driving element. The rotating axis is connected to the substrate. The driving element is connected to the rotating axis, and drives the rotating axis to rotate. The substrate includes a first diffusion region and an optical region disposed adjacent to each other, and the first diffusion region has multiple first diffusion sub-regions, each of the first diffusion sub-regions extends along a circumferential direction of the substrate and the first diffusion sub-regions are arranged concentrically along a radial direction of the substrate, when the first diffusion region is cut into the transmission path of the light beam, the light beam forms a first light spot on the first diffusion region of the substrate. A projection device is also provided.

Abstract: A portable energy management device, disposed between a power outlet and an appliance load when being used, includes a transmission module, a micro processing unit, a schedule module, and a power control circuit. The transmission module communicates with a remote control device by receiving or sending a wireless signal or a cable signal, through which schedule commands are transmitted. The micro processing unit performs analysis and identification of the appliance load, and information related to the appliance load is sent to the remote control device through the transmission module. The schedule module executed by the micro-processing unit stores and runs the schedule commands. The power control circuit is controlled by schedule commands to determine whether power should be supplied.

Abstract: An operating method of a network system includes setting a plurality of first connection ports from among a plurality of connection ports of a first switch as belonging to a first loop group; receiving, through the first switch, a topology change notification; determining, through the first switch, whether the topology change notification is received via one of the first connection ports; and under a condition that the topology change notification is received via one of the first connection ports, outputting, through the first switch, the topology change notification via the other one/ones of the first connection ports, and not via the connection port/ports which do/does not belong to the first loop group. With such operation, broadcasting the topology change notification can be avoided, so as to increase the efficiency, bandwidth, and stability of the network system.

Abstract: A portable energy management device, disposed between a power outlet and an appliance load when being used, includes a transmission module, a micro processing unit, a schedule module, and a power control circuit. The transmission module communicates with a remote control device by receiving or sending a wireless signal or a cable signal, through which schedule commands are transmitted. The micro processing unit performs analysis and identification of the appliance load, and information related to the appliance load is sent to the remote control device through the transmission module. The schedule module executed by the micro-processing unit stores and runs the schedule commands. The power control circuit is controlled by schedule commands to determine whether power should be supplied.

Abstract: An operating method of a network system includes setting a plurality of first connection ports from among a plurality of connection ports of a first switch as belonging to a first loop group; receiving, through the first switch, a topology change notification; determining, through the first switch, whether the topology change notification is received via one of the first connection ports; and under a condition that the topology change notification is received via one of the first connection ports, outputting, through the first switch, the topology change notification via the other one/ones of the first connection ports, and not via the connection port/ports which do/does not belong to the first loop group. With such operation, broadcasting the topology change notification can be avoided, so as to increase the efficiency, bandwidth, and stability of the network system.