Abstract: A method includes: inspecting a reticle in a reticle pod, the reticle pod including a sealed space to accommodate the reticle, and the reticle pod further comprising a window arranged on an upper surface of the reticle pod, wherein the inspecting is performed through the window; and moving the reticle out of the reticle pod for performing a lithography operation using the reticle.

Abstract: Various embodiments of the present disclosure are directed towards a shared frontside pad/bridge layout for a three-dimensional (3D) integrated circuit (IC), as well as the 3D IC and a method for forming the 3D IC. A second IC die underlies the first IC die, and a third IC die underlies the second IC die. A first-die backside pad, a second-die backside pad, and a third die backside pad are in a row extending in a dimension and overlie the first, second, and third IC dies. Further, the first-die, second-die, and third-die backside pads are electrically coupled respectively to individual semiconductor devices of the first, second, and third IC dies. The second and third IC dies include individual pad/bridge structures at top metal (TM) layers of corresponding interconnect structures. The pad/bridge structures share the shared frontside pad/bridge layout and provide lateral routing in the dimension for the aforementioned electrical coupling.

Abstract: A device includes a substrate, and a first semiconductor channel over the substrate. The first semiconductor channel includes a first nanosheet of a first semiconductor material, a second nanosheet of a second semiconductor material in physical contact with a topside surface of the first nanosheet, and a third nanosheet of the second semiconductor material in physical contact with an underside surface of the first nanosheet. The first gate structure is over and laterally surrounding the first semiconductor channel, and in physical contact with the second nanosheet and the third nanosheet.

Abstract: A device includes a substrate, and a first semiconductor channel over the substrate. The first semiconductor channel includes a first nanosheet of a first semiconductor material, a second nanosheet of a second semiconductor material in physical contact with a topside surface of the first nanosheet, and a third nanosheet of the second semiconductor material in physical contact with an underside surface of the first nanosheet. The first gate structure is over and laterally surrounding the first semiconductor channel, and in physical contact with the second nanosheet and the third nanosheet.

Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a gate dielectric layer around first channel layers in a p-type gate region and around second channel layers in an n-type gate region. Sacrificial features are formed between the second channel layers in the n-type gate region. A p-type work function layer is formed over the gate dielectric layer in the p-type gate region and the n-type gate region. After removing the p-type work function layer from the n-type gate region, the sacrificial features are removed from between the second channel layers in the n-type gate region. An n-type work function layer is formed over the gate dielectric layer in the n-type gate region. A metal fill layer is formed over the p-type work function layer in the p-type gate region and the n-type work function layer in the n-type gate region.

Abstract: A contactless selection device, a light triggering structure thereof, and a biological particle selection apparatus are provided. The light triggering structure includes a first substrate, a first electrode layer formed on the first substrate, a photodiode layer formed on the first electrode layer, and an insulating layer that covers the photodiode layer. The photodiode layer has a thickness within a range from 1 ?m to 3 ?m, and includes a first doped layer, an I-type layer, and a second doped layer, which are sequentially stacked from the first electrode layer. The second doped layer includes a plurality of triggering pads spaced apart from each other. Each of the triggering pads has a width within a range from 3 ?m to 7 ?m, and a distance between any two of the triggering pads adjacent to each other is less than or equal to 2 ?m.

Abstract: A pico-droplet generator includes a light sensing structure, a mating structure that is spaced apart from the light sensing structure, a bonding layer that connects the light sensing structure and the mating structure, and a piezoelectric member that is disposed on the bonding layer. The pico-droplet generator defines a selection channel along a flowing direction. The bonding layer has a selection hole that is in spatial communication with the selection channel along a dripping direction perpendicular to the flowing direction. The piezoelectric member and the selection hole are respectively arranged on two opposite sides of the bonding layer. The pico-droplet generator has a pico-droplet emission region that is defined from the selection hole toward the piezoelectric member.

Abstract: A bioparticle contactless processing apparatus includes an accommodating device and a triggering device. The accommodating device includes a light sensing structure, a mating structure spaced apart from the light sensing structure, and a frame arranged between the light sensing structure and the mating structure. The frame has two working segments each having a first opening and a second opening that is smaller than the first opening, and the first opening and the second opening are respectively arranged on two opposite ends of the two working segments. The triggering device is arranged corresponding to the frame. When at least one bioparticle is transferred into the frame by passing through the first opening and has a size larger than the second opening, the triggering device is configured to trigger an outer cell layer of the at least one bioparticle to have a predetermined permeability higher than an original permeability thereof.

Abstract: A method for forming a semiconductor arrangement comprises forming a first fin in a semiconductor layer. A first gate dielectric layer includes a first high-k material is formed over the first fin. A first sacrificial gate electrode is formed over the first fin. A dielectric layer is formed adjacent the first sacrificial gate electrode and over the first fin. The first sacrificial gate electrode is removed to define a first gate cavity in the dielectric layer. A second gate dielectric layer including a second dielectric material different than the first high-k material is formed over the first gate dielectric layer in the first gate cavity. A first gate electrode is formed in the first gate cavity over the second gate dielectric layer.

Abstract: A structure has stacks of semiconductor layers over a substrate and adjacent a dielectric feature. A gate dielectric is formed wrapping around each layer and the dielectric feature. A first layer of first gate electrode material is deposited over the gate dielectric and the dielectric feature. The first layer on the dielectric feature is recessed to a first height below a top surface of the dielectric feature. A second layer of the first gate electrode material is deposited over the first layer. The first gate electrode material in a first region of the substrate is removed to expose a portion of the gate dielectric in the first region, while the first gate electrode material in a second region of the substrate is preserved. A second gate electrode material is deposited over the exposed portion of the gate dielectric and over a remaining portion of the first gate electrode material.

Abstract: In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.

Abstract: A display device including a display panel having a top surface, a side surface, a light shielding component, and an optical film is provided. The side surface is adjacent to the top surface. The light shielding component has a first part and a second part. The first part is disposed on the top surface of the display panel. The second part is disposed on the side surface of the display panel. The optical film at least covers the border between the top surface of the display panel and the first part of the light shielding component. The width of the first part of the light shielding component is less than 1 mm.

Abstract: A display device including a display panel having a top surface, a side surface, a light shielding component, and an optical film is provided. The side surface is adjacent to the top surface. The light shielding component has a first part and a second part. The first part is disposed on the top surface of the display panel. The second part is disposed on the side surface of the display panel. The optical film at least covers the border between the top surface of the display panel and the first part of the light shielding component. The width of the first part of the light shielding component is less than 1 mm.