Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A circuit board structure with capacitors embedded therein and a method for fabricating the same are disclosed. The structure comprises at least two core layers individually comprising a dielectric layer having two opposite surfaces, circuit layers disposed on the outsides of the two opposite surfaces of the dielectric layer, and at least two capacitors embedded respectively on the insides of the two opposite surfaces of the dielectric layer and individually electrically connecting with the circuit layer at the same side; at least one adhesive layer disposed between the core layers to combine the core layers as a core structure; and at least one conductive through hole penetrating the core layers and the adhesive layer, and electrically connecting the circuit layers of the core layers. Accordingly, the present invention can improve the flexibility of circuit layout, and realize parallel connection between the capacitors to provide more capacitance.

Abstract: A circuit board structure with capacitors embedded therein and a method for fabricating the same are disclosed. The structure comprises at least two core layers individually comprising a dielectric layer having two opposite surfaces, circuit layers disposed on the outsides of the two opposite surfaces of the dielectric layer, and at least two capacitors embedded respectively on the insides of the two opposite surfaces of the dielectric layer and individually electrically connecting with the circuit layer at the same side; at least one adhesive layer disposed between the core layers to combine the core layers as a core structure; and at least one conductive through hole penetrating the core layers and the adhesive layer, and electrically connecting the circuit layers of the core layers. Accordingly, the present invention can improve the flexibility of circuit layout, and realize parallel connection between the capacitors to provide more capacitance.

Abstract: A circuit board structure with capacitors embedded therein and a method for fabricating the same are disclosed. The structure comprises at least two core layers individually comprising a dielectric layer having two opposite surfaces, circuit layers disposed on the outsides of the two opposite surfaces of the dielectric layer, and at least two capacitors embedded respectively on the insides of the two opposite surfaces of the dielectric layer and individually electrically connecting with the circuit layer at the same side; at least one adhesive layer disposed between the core layers to combine the core layers as a core structure; and at least one conductive through hole penetrating the core layers and the adhesive layer, and electrically connecting the circuit layers of the core layers. Accordingly, the present invention can improve the flexibility of circuit layout, and realize parallel connection between the capacitors to provide more capacitance.

Abstract: A circuit board structure embedded with semiconductor chips is proposed. A semiconductor chip is received in a cavity of a supporting board. A dielectric layer and a circuit layer are formed on the supporting board and the semiconductor chip. A plurality of hollow conductive vias are formed in the dielectric layer for electrically connecting the circuit layer to the semiconductor chip. By providing the hollow conductive vias of present invention, the separating results of different coefficients of expansion and thermal stress are prevented, and thus electrical function of products is ensured.

Abstract: A stack structure of circuit boards embedded with semiconductor chips is proposed. At least two circuit boards are provided. Each of the circuit boards includes circuit layers formed on surfaces thereof and at least one opening embedded with a semiconductor chip, wherein, the circuit layers have a plurality of conductive structures and electrically conductive pads, and the semiconductor chip has a plurality of electrode pads, and the conductive structures of the circuit layers are electrically conductive to the electrode pads of the semiconductor chip. At least one adhesive layer is formed between the two circuit boards and disposed with a conductive material corresponding in position to the electrically conductive pads of the circuit boards. Thus, a conductive path can be formed by the conductive material between the electrically conductive pads of the circuit boards, thereby establishing electrical connection between the two circuit boards.

Abstract: A circuit board structure having a capacitor array and an embedded electronic component and a method for fabricating the same are proposed. Two carrier boards and a high dielectric constant material layer are provided, wherein the carrier boards have electronic components embedded therein and one surface of each carrier board has a plurality of electrode plates. The two carrier boards are laminated with the dielectric constant material layer interposed between them. The electrode plates on the surfaces of the carrier boards are opposite to each other across the high dielectric constant material layer to constitute a capacitor array. Therefore, the capacitor assembly for design of electronic devices is provided.

Abstract: A stack structure of circuit boards embedded with semiconductor components therein is proposed, which includes at least two semiconductor components embedded circuit boards, a plurality of conductive bumps, and at least one adhesive layer. The circuit boards are each formed with a circuit layer having a plurality of electrical connection pads. The conductive bumps are formed on the electrical connection pads of at least one of the circuit boards. The adhesive layer is formed between the circuit boards such that a portion of the adhesive layer between the conductive bumps and the electrical connection pads, or between the opposing conductive bumps, forms a conductive channel and thereby forms an electrical connection between the circuit boards.

Abstract: A carrier structure for a semiconductor chip and a method for manufacturing the same are disclosed. The method includes the following steps: providing a carrier board having at least one through cavity, wherein a removable film is formed on the surface of the carrier board, and a semiconductor chip is temporarily fixed in the through cavity by the removable film; filling the gap between the through cavity of the carrier board and the semiconductor chip with an adhesive material in order to fix the semiconductor chip; and removing the removable film. The disclosed method can reduce the alignment error resulted from the tiny shift of the semiconductor chip caused by jitters before the semiconductor is fixed in the cavity, thereby to increase the accuracy of the alignment, to facilitate fine wiring, and to meet the trend toward compact size of semiconductor packages.

Abstract: A plate structure having a chip embedded therein, comprises an aluminum plate having at least one aluminum oxide layer formed on its surface, and a cavity therein; a chip embedded in the cavity, wherein the chip has an active surface; at least one electrode pad mounted on the active surface; and a build-up structure mounted on the surface of the aluminum plate, the active surface of the chip, and the surface of the electrode pad, wherein the build-up structure comprises at least one conducting to electrically connect to the electrode pad. Besides, a method of manufacturing a plate structure having a chip embedded therein is disclosed. Therefore, the plate structure having a chip embedded therein can be processed by a simple method to achieve the tenacity of aluminum and the rigidity of aluminum oxide.

Abstract: A circuit board structure embedded with semiconductor chips is proposed. A semiconductor chip is received in a cavity of a supporting board. A dielectric layer and a circuit layer are formed on the supporting board and the semiconductor chip. A plurality of hollow conductive vias are formed in the dielectric layer for electrically connecting the circuit layer to the semiconductor chip. By providing the hollow conductive vias of present invention, the separating results of different coefficients of expansion and thermal stress are prevented, and thus electrical function of products is ensured.

Abstract: A stack structure of circuit boards embedded with semiconductor chips is proposed. At least two circuit boards are provided. Each of the circuit boards includes circuit layers formed on surfaces thereof and at least one opening embedded with a semiconductor chip, wherein, the circuit layers have a plurality of conductive structures and electrically conductive pads, and the semiconductor chip has a plurality of electrode pads, and the conductive structures of the circuit layers are electrically conductive to the electrode pads of the semiconductor chip. At least one adhesive layer is formed between the two circuit boards and disposed with a conductive material corresponding in position to the electrically conductive pads of the circuit boards. Thus, a conductive path can be formed by the conductive material between the electrically conductive pads of the circuit boards, thereby establishing electrical connection between the two circuit boards.

Abstract: A stack structure of a carrier board embedded with semiconductor components and a method for fabricating the same are proposed. The stack structure includes first and second carrier boards having a through hole respectively, first and second semiconductors component disposed in through holes of the first and second semiconductor components respectively, and a dielectric layer structure clamped between the first carrier board and the second carrier board and having a first dielectric layer formed on the first carrier board and an inactive surface of the first semiconductor component and filled in gaps between the first carrier board and the first semiconductor component, a second dielectric layer formed on the second carrier board and an inactive of the second semiconductor component and filled in gaps between the second carrier board and the second semiconductor component, and a bonding layer clamped between the first dielectric layer and the second dielectric layer.

Abstract: A stack structure of carrier boards embedded with semiconductor components and a method for fabricating the same are proposed. A first carrier board and a second carrier board, each of which having at least one through hole, are provided. A first protecting layer and a second protecting layer are formed on a surface of the first and second carrier boards respectively. At least one first semiconductor component and at least one second semiconductor component are disposed on the first and second protecting layers and accommodated in the first and second through holes respectively. A dielectric layer is laminated between the surfaces of the first and second carrier boards without the protecting layers formed thereon. Thus, a modularized package structure with reduced space waste is formed.

Abstract: A packaging substrate having a chip embedded therein, comprises a first aluminum substrate having a first cavity therein; a second aluminum substrate having a second cavity corresponding to the first cavity; a dielectric layer disposed between the first aluminum substrate and the second aluminum substrate; a chip embedded in the first cavity and the second cavity, having an active surface with a plurality of electrode pads thereon; and one built-up structure disposed on the surface of the first aluminum substrate and the active surface of the chip, wherein the built-up structure has a plurality of conductive vias electrically connecting to the electrode pads. The substrate warpage is obviously reduced by the assistance of using aluminum or aluminum alloy as the material of the substrate. Also, a method of manufacturing a packaging substrate having a chip embedded therein is disclosed.

Abstract: A structure of a packaging substrate having capacitors embedded therein is disclosed. The structure comprises a core substrate, a dielectric layer, and an outer circuit layer. The core substrate comprises an inner circuit layer. The dielectric layer is disposed at both sides of the core substrate, having first conductive vias each connecting to the inner circuit layer through a piece of outer electrode plate, a piece of high dielectric material layer, a piece of inner electrode plate, and a piece of adhesive layer, in sequence. The outer circuit layer is disposed on the surface of each of the dielectric layers. Herein, the capacitor is composed of a piece of the outer electrode plate, the high dielectric material layer and the inner electrode plate. The invention further comprises a method for manufacturing the same. This can achieve low costs, avoid the formation of voids, and reduce parasitic capacitance.

Abstract: A multi-chip semiconductor package structure is disclosed, including a carrier board having a first and an opposing second surfaces and formed with at least an opening penetrating the first and second surfaces, wherein a plurality of electrically connecting pads are formed on the first and second surfaces of the carrier board, respectively; a semiconductor component disposed in the opening, the semiconductor component having a first and a second active surfaces each with a plurality of electrode pads being formed thereon; a third semiconductor chip having an active surface and an inactive surface, the active surface having a plurality of electrode pads formed thereon for electrically connecting with the electrically connecting pads on the first surface of the carrier board and the electrode pads on the first active surface of the semiconductor component; and a fourth semiconductor chip having an active surface and an inactive surface, the active surface having a plurality of electrode pads formed thereon for

Abstract: A multi-chip semiconductor package structure is disclosed according to the present invention, the package structure includes: a carrier board having a first surface, a second surface, and at least an opening penetrating the first and second surfaces, the first and second surfaces each having electrically connecting pads; a semiconductor component received in the opening, the semiconductor component has a first active surface and a second active surface, and each of the first and second active surfaces has a plurality of electrode pads; a plurality of first conductive elements electrically connected to the electrically connecting pads of the first and second surfaces of the carrier board with the electrode pads of the first and second active surfaces of the semiconductor component; and a molding material formed on a portion of the first surface of the carrier board, the first active surface of the semiconductor component, a portion of the second surface of the carrier board, and the second active surface of th

Abstract: A multi-chip semiconductor package structure is disclosed according to the present invention.