Abstract: A method and an apparatus for signal extraction of audio signal are provided. An audio signal is converted into a plurality of frames, and the frames are arranged in a chronological order. Spectral data of each of the frames is obtained. The spectral data of each of N frames is extracted in the chronological order, and a spectral connectivity operation is executed for the N frames. Finally, the signal including the frames having the spectral connectivity between adjacent frames in each of the frames is determined as an ideal signal.

Abstract: A method and an apparatus for signal extraction of audio signal are provided. An audio signal is converted into a plurality of frames, and the frames are arranged in a chronological order. Spectral data of each of the frames is obtained. The spectral data of each of N frames is extracted in the chronological order, and a spectral connectivity operation is executed for the N frames. Finally, the signal including the frames having the spectral connectivity between adjacent frames in each of the frames is determined as an ideal signal.

Abstract: A method and an apparatus for detecting noise of audio signals are provided. The method includes steps of converting an audio signal into a plurality of audio frames, where the audio frames are arranged in chronological order while taking a target frame as a center, calculating a plurality of magnitudes respectively corresponding to a plurality of spectral components of each of the audio frames, calculating differences between the adjacent magnitudes in a time-frequency domain to obtain a plurality of difference values in at least two directions orthogonal to each other in the time-frequency domain, where the time-frequency domain is defined by the audio frames, determining a maximum degree of difference of the magnitudes in the time-frequency domain according to the difference values, and determining whether a part of the audio signal corresponding to the target frame is a noise according to the maximum degree of difference.

Abstract: A method and an apparatus for detecting noise of audio signals are provided. The method includes steps of converting an audio signal into a plurality of audio frames, where the audio frames are arranged in chronological order while taking a target frame as a center, calculating a plurality of magnitudes respectively corresponding to a plurality of spectral components of each of the audio frames, calculating differences between the adjacent magnitudes in a time-frequency domain to obtain a plurality of difference values in at least two directions orthogonal to each other in the time-frequency domain, where the time-frequency domain is defined by the audio frames, determining a maximum degree of difference of the magnitudes in the time-frequency domain according to the difference values, and determining whether a part of the audio signal corresponding to the target frame is a noise according to the maximum degree of difference.

Abstract: This disclosure includes the identification of molecular markers, including ASPM, ATP9A, ACOX3, CD-C45L, SLC40A1, AGR2, and those found in TABLE 2, that are associated with the differentiation and the clinical prognosis of pancreatic cancer. More specifically, the disclosure includes the identification of sets of gene markers whose expression levels can be used to distinguish pancreatic cancers with higher degrees of differentiation from those with lower degrees of differentiation. These markers can be used to predict clinical prognosis of pancreatic cancer, including disease progression, recurrence or death of the hosts. The disclosure also provides methods of treating glandular cancers and kits for assaying glandular cancers, such as pancreatic cancer, breast cancer, and prostate cancer, by inhibiting the expression of ASPM or its ability to activate or maintain the Wnt signaling activity and/or the cancer stem cell populations of said glandular cancers.

Abstract: A multi-junction device can be used as a high efficiency solar cell, laser, or light-emitting diode. Multiple epitaxial films grown over a substrate have very low defect densities because an initial epitaxial layer is a coincidence-site lattice (CSL) layer that has III-V atoms that fit into lattice sites of Silicon atoms in the substrate. The substrate is a Si (111) substrate which has a step height between adjacent terraces on its surface that closely matches the step height of GaAs (111). Any anti-phase boundaries (APBs) formed at terrace steps cancel out within a few atomic layers of GaAs in the (111) orientation since the polarity of the GaAs molecule is aligned with the (111) direction. A low CSL growth temperature grows GaAs horizontally along Si terraces before vertical growth. Tunnel diode and active solar-cell junction layers can be grown over the CSL at higher temperatures.

Abstract: A multi-junction device can be used as a high efficiency solar cell, laser, or light-emitting diode. Multiple epitaxial films grown over a substrate have very low defect densities because an initial epitaxial layer is a coincidence-site lattice (CSL) layer that has III-V atoms that fit into lattice sites of Silicon atoms in the substrate. The substrate is a Si (111) substrate which has a step height between adjacent terraces on its surface that closely matches the step height of GaAs (111). Any anti-phase boundaries (APBs) formed at terrace steps cancel out within a few atomic layers of GaAs in the (111) orientation since the polarity of the GaAs molecule is aligned with the (111) direction. A low CSL growth temperature grows GaAs horizontally along Si terraces before vertical growth. Tunnel diode and active solar-cell junction layers can be grown over the CSL at higher temperatures.