Abstract: The present invention provides a method of hydrogenating a solar cell and a device thereof. The device includes a chamber, a moving device, and a light-beam generator. The light-beam generated by the light-beam generator has a power density between 20 W/cm2 and 200 W/cm2 and a width between 1 mm and 156 mm. The light-beam scans a solar cell with a scanning speed between 50 mm/sec and 200 mm/sec to achieve hydrogenating the solar cell. Furthermore, the device includes a heating device used to heat the solar cell.

Abstract: The present disclosure provides a method for recovering the efficacy of solar cell modules and a device thereof. The method includes providing a solar cell module and scanning the solar cell module with a light-beam. The light-beam has a power density between 20 W/cm2 and 200 W/cm2, a width between 1 mm and 156 mm. The light-beam scans a solar cell module with a scanning speed between 50 mm/sec and 200 mm/sec. Furthermore, the present disclosure also provides a portable device for recovering the efficacy of solar cell modules. The portable device includes two types such as placed type and hand-held type. The aforementioned devices can perform a hydrogenating process on solar cell modules to improve the degree of light-induced degradation (LID) so as to improve the photovoltaic conversion efficiency of solar cell modules.

Abstract: The present disclosure provides a method for recovering the efficacy of solar cell modules and a device thereof. The method includes providing a solar cell module and scanning the solar cell module with a light-beam. The light-beam has a power density between 20 W/cm2 and 200 W/cm2, a width between 1 mm and 156 mm. The light-beam scans a solar cell module with a scanning speed between 50 mm/sec and 200 mm/sec. Furthermore, the present disclosure also provides a portable device for recovering the efficacy of solar cell modules. The portable device includes two types such as placed type and hand-held type. The aforementioned devices can perform a hydrogenating process on solar cell modules to improve the degree of light-induced degradation (LID) so as to improve the photovoltaic conversion efficiency of solar cell modules.

Abstract: Methods to manufacture metal nanopins and metal oxide nanopins are disclosed. Metal nanopins are fabricated on a metal foil by capillaritron plasma source dry etching. The aspect ratio and the density of metal nanopins are controlled by adjusting the temperature of the metal foil during ion beam dry etching. The end radius of metal nanopins less than 10 nm and the aspect ratio of metal nanopins between 25 and 30 can be achieved. Besides, metal oxide nanopins are fabricated by ion implantation and thermal oxidation. The metal foil is implanted with ions and then thermally oxidized to form the metal oxide nanopins. It shows that the metal oxide nanopins fabricated with oxygen implantation exhibit better field emission properties.

Abstract: Methods to manufacture metal nanopins and metal oxide nanopins are disclosed. Metal nanopins are fabricated on a metal foil by capillaritron plasma source dry etching. The aspect ratio and the density of metal nanopins are controlled by adjusting the temperature of the metal foil during ion beam dry etching. The end radius of metal nanopins less than 10 nm and the aspect ratio of metal nanopins between 25 and 30 can be achieved. Besides, metal oxide nanopins are fabricated by ion implantation and thermal oxidation. The metal foil is implanted with ions and then thermally oxidized to form the metal oxide nanopins. It shows that the metal oxide nanopins fabricated with oxygen implantation exhibit better field emission properties.

Abstract: A capillaritron ion beam sputtering system and a thin film production method are disclosed. By utilizing reactive capillaritron ion beam sputtering deposition, argon and oxygen are passed through a capillaritron ion source simultaneously. Argon is being ionized and accelerated by a voltage to bombard a zinc target and create zinc atoms, while oxygen atoms are created at the same time. Zinc atom and oxygen atom are combined to form ZnO to deposit on a substrate. The stoichiometric properties, deposition rate, transmission properties, surface roughness and film density of the as-deposited film can be altered by adjusting capillaritron ion beam energy and oxygen partial pressure. Using preferred processing parameters, the root-mean-square surface roughness of the as-deposited film can be smaller than 1.5 nm, while the transmission coefficient at visible range can be greater than 80%.