Abstract: A package structure including a photonic, an electronic die, an encapsulant and a waveguide is provided. The photonic die includes an optical coupler. The electronic die is electrically coupled to the photonic die. The encapsulant laterally encapsulates the photonic die and the electronic die. The waveguide is disposed over the encapsulant and includes an upper surface facing away from the encapsulant. The waveguide includes a first end portion and a second end portion, the first end portion is optically coupled to the optical coupler, and the second end portion has a groove on the upper surface.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: A semiconductor package includes a first die stack structure and a second die stack structure, an insulating encapsulation, a redistribution structure, at least one prism structure and at least one reflector. The first die stack structure and the second die stack structure are laterally spaced apart from each other along a first direction, and each of the first die stack structure and the second die stack structure comprises an electronic die; and a photonic die electronically communicating with the electronic die. The insulating encapsulation laterally encapsulates the first die stack structure and the second die stack structure. The redistribution structure is disposed on the first die stack structure, the second die stack structure and the insulating encapsulation, and electrically connected to the first die stack structure and the second die stack structure. The at least one prism structure is disposed within the redistribution structure and optically coupled to the photonic die.

Abstract: A high electron mobility transistor includes: a first semiconductor layer over a substrate, and a second semiconductor layer over the first semiconductor layer, the second semiconductor layer having a band gap discontinuity with the first semiconductor layer, and at the first semiconductor layer and/or the second conductive layer includes indium. A top layer is over the second semiconductor layer, and a metal layer is over, and extends into, the top layer, the top layer separating the metal layer from the second semiconductor layer. A gate electrode is over the top layer, a third semiconductor layer being between the gate electrode and the top layer, where a sidewall of the third semiconductor layer and a sidewall of the metal layer are separated. A source and drain are on opposite sides of the gate electrode, the top layer extending continuously from below the source, below the gate electrode, and below the drain.

Abstract: A high electron mobility transistor includes: a first semiconductor layer over a substrate, and a second semiconductor layer over the first semiconductor layer, the second semiconductor layer having a band gap discontinuity with the first semiconductor layer, and at the first semiconductor layer and/or the second conductive layer includes indium. A top layer is over the second semiconductor layer, and a metal layer is over, and extends into, the top layer, the top layer separating the metal layer from the second semiconductor layer. A gate electrode is over the top layer, a third semiconductor layer being between the gate electrode and the top layer, where a sidewall of the third semiconductor layer and a sidewall of the metal layer are separated. A source and drain are on opposite sides of the gate electrode, the top layer extending continuously from below the source, below the gate electrode, and below the drain.

Abstract: A high electron mobility transistor (HEMT) includes a substrate, and a channel layer over the substrate, wherein and at least one of the channel layer or the active layer comprises indium. The HEMT further includes an active layer over the channel layer. The active layer has a band gap discontinuity with the channel layer.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: A high electron mobility transistor (HEMT) includes a substrate, and a channel layer over the substrate, wherein and at least one of the channel layer or the active layer comprises indium. The HEMT further includes an active layer over the channel layer. The active layer has a band gap discontinuity with the channel layer.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: Distributed network-based data backup, recovery and deletion methods and a distributed network system thereof are provided. The methods include respectively establishing peer-to-peer connections between a host storage server and a plurality of peer storage servers, dividing original data into a plurality of data segments, generating a plurality of data segment copies corresponding to the data segments according to a minimum survival rate and the number of peer storage servers. The methods also include transmitting the data segment copies to the peer storage servers, wherein the number of data segment copies for each of the data segments is equal to a redundancy, and the redundancy is smaller than the number of the peer storage servers, and the data segment copies distributed to any one of the peer storage servers correspond to a portion of all the data segments. Accordingly, the methods can effectively and safely backup the original data.

Abstract: Distributed network-based data backup, recovery and deletion methods and a distributed network system thereof are provided. The methods include respectively establishing peer-to-peer connections between a host storage server and a plurality of peer storage servers, dividing original data into a plurality of data segments, generating a plurality of data segment copies corresponding to the data segments according to a minimum survival rate and the number of peer storage servers. The methods also include transmitting the data segment copies to the peer storage servers, wherein the number of data segment copies for each of the data segments is equal to a redundancy, and the redundancy is smaller than the number of the peer storage servers, and the data segment copies distributed to any one of the peer storage servers correspond to a portion of all the data segments. Accordingly, the methods can effectively and safely backup the original data.