Patents by Inventor Chung Chien Wang
Chung Chien Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10290502Abstract: An apparatus comprises an optical detector configured to receive scattered light signals from a surface of a wafer including a plurality of sensor arrays, each of which has a boundary smaller than a boundary of a laser beam, a light source optically coupled to the surface of the wafer, wherein light from the light source hits the surface with a small incident angle and a processor configured to measure a distance between a sensor array boundary and a laser beam boundary, wherein a laser annealing process is recalibrated if the distance is less than a predetermined value.Type: GrantFiled: August 3, 2015Date of Patent: May 14, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung Chien Wang, Yeur-Luen Tu, Cheng-Ta Wu, Chia-Shiung Tsai
-
Patent number: 9418999Abstract: A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.Type: GrantFiled: October 28, 2014Date of Patent: August 16, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Ta Wu, Jason Lee, Chung Chien Wang, Hsing-Lien Lin, Yu-Jen Wang, Yeur-Luen Tu, Chern-Yow Hsu, Yuan-Hung Liu, Chi-Hsin Lo, Chia-Shiung Tsai
-
Publication number: 20150352665Abstract: An apparatus comprises an optical detector configured to receive scattered light signals from a surface of a wafer including a plurality of sensor arrays, each of which has a boundary smaller than a boundary of a laser beam, a light source optically coupled to the surface of the wafer, wherein light from the light source hits the surface with a small incident angle and a processor configured to measure a distance between a sensor array boundary and a laser beam boundary, wherein a laser annealing process is recalibrated if the distance is less than a predetermined value.Type: ApplicationFiled: August 3, 2015Publication date: December 10, 2015Inventors: Chung Chien Wang, Yeur-Luen Tu, Cheng-Ta Wu, Chia-Shiung Tsai
-
Patent number: 9099389Abstract: A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.Type: GrantFiled: February 10, 2012Date of Patent: August 4, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung Chien Wang, Yeur-Luen Tu, Cheng-Ta Wu, Chia-Shiung Tsai
-
Publication number: 20150041874Abstract: A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.Type: ApplicationFiled: October 28, 2014Publication date: February 12, 2015Inventors: Chih-Ta Wu, Jason Lee, Chung Chien Wang, Hsing-Lien Lin, Yu-Jen Wang, Yeur-Luen Tu, Chern-Yow Hsu, Yuan-Hung Liu, Chi-Hsin Lo, Chia-Shiung Tsai
-
Patent number: 8889507Abstract: A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.Type: GrantFiled: June 20, 2007Date of Patent: November 18, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Ta Wu, Jason Lee, Chung Chien Wang, Hsing-Lien Lin, Yu-Jen Wang, Yeur-Luen Tu, Chern-Yow Hsu, Yuan-Hung Liu, Chi-Hsin Lo, Chia-Shiung Tsai, Lucy Chang, Chia-Lin Chen, Ming-Chih Tsai
-
Patent number: 8809098Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate.Type: GrantFiled: November 25, 2013Date of Patent: August 19, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
-
Patent number: 8759225Abstract: The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.Type: GrantFiled: September 4, 2012Date of Patent: June 24, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung Chien Wang, Yeur-Luen Tu, Cheng-Ta Wu, Jiech-Fun Lu, Chun-Wei Chang, Wang-Pen Mo, Jhy-Jyi Sze, Chia-Shiung Tsai
-
Patent number: 8735207Abstract: The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.Type: GrantFiled: April 5, 2011Date of Patent: May 27, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung Chien Wang, Yeur-Luen Tu, Chia-Shiung Tsai
-
Publication number: 20140073080Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate.Type: ApplicationFiled: November 25, 2013Publication date: March 13, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
-
Publication number: 20140061738Abstract: The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.Type: ApplicationFiled: September 4, 2012Publication date: March 6, 2014Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung Chien Wang, Yeur-Luen Tu, Cheng-Ta Wu, Jiech-Fun Lu, Chun-Wei Chang, Wang-Pen Mo, Jhy-Jyi Sze, Chia-Shiung Tsai
-
Patent number: 8614495Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.Type: GrantFiled: April 23, 2010Date of Patent: December 24, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
-
Publication number: 20130210188Abstract: A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.Type: ApplicationFiled: February 10, 2012Publication date: August 15, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung Chien Wang, Yeur-Luen Tu, Cheng-Ta Wu, Chia-Shiung Tsai
-
Patent number: 8304354Abstract: Methods are disclosed herein for determining the laser beam size and the scan pattern of laser annealing when fabricating backside illumination (BSI) CMOS image sensors to keep dark-mode stripe patterns corresponding to laser scan boundary effects from occurring within the sensor array regions of the image sensors. Each CMOS image sensor has a sensor array region and a periphery circuit. The methods determines a size of the laser beam from a length of the sensor array region and a length of the periphery circuit so that the laser beam covers an integer number of the sensor array region for at least one alignment of the laser beam on the array of BSI image sensors. The methods further determines a scan pattern so that the boundary of the laser beam does not overlap the sensor array regions during the laser annealing, but only overlaps the periphery circuits.Type: GrantFiled: April 22, 2010Date of Patent: November 6, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chun Hsu, Yeur-Luen Tu, Chung Chien Wang, Tzu-Hsuan Hsu, Ching-Chun Wang
-
Publication number: 20120258564Abstract: The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.Type: ApplicationFiled: April 5, 2011Publication date: October 11, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung Chien Wang, Yeur-Luen Tu, Chia-Shiung Tsai
-
Publication number: 20110260280Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.Type: ApplicationFiled: April 23, 2010Publication date: October 27, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
-
Publication number: 20110263069Abstract: Methods are disclosed herein for determining the laser beam size and the scan pattern of laser annealing when fabricating backside illumination (BSI) CMOS image sensors to keep dark-mode stripe patterns corresponding to laser scan boundary effects from occurring within the sensor array regions of the image sensors. Each CMOS image sensor has a sensor array region and a periphery circuit. The methods determines a size of the laser beam from a length of the sensor array region and a length of the periphery circuit so that the laser beam covers an integer number of the sensor array region for at least one alignment of the laser beam on the array of BSI image sensors. The methods further determines a scan pattern so that the boundary of the laser beam does not overlap the sensor array regions during the laser annealing, but only overlaps the periphery circuits.Type: ApplicationFiled: April 22, 2010Publication date: October 27, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kai-Chun Hsu, Yeur-Luen Tu, Chung Chien Wang
-
Patent number: 7851324Abstract: A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.Type: GrantFiled: October 26, 2006Date of Patent: December 14, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Jen Wang, Chia-Shiung Tsai, Yeur-Luen Tu, Lan-Lin Chao, Chih-Ta Wu, Hsing-Lien Lin, Chung Chien Wang
-
Publication number: 20080318378Abstract: A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.Type: ApplicationFiled: June 20, 2007Publication date: December 25, 2008Inventors: Chih-Ta Wu, Jason Lee, Chung Chien Wang, Hsing-Lien Lin, Yu-Jen Wang, Yeur-Luen Tu, Chern-Yow Hsu, Yuan-Hung Liu, Chi-Hsin Lo, Chia-Shiung Tsai, Lucy Chang, Chia-Lin Chen, Ming-Chih Tsai
-
Publication number: 20080188055Abstract: A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.Type: ApplicationFiled: October 26, 2006Publication date: August 7, 2008Inventors: Yu-Jen Wang, Chia-Shiung Tsai, Yeur-Luen Tu, Lan-Lin Chao, Chih-Ta Wu, Hsing-Lien Lin, Chung Chien Wang