Abstract: Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.

Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A method for identifying friction parameters for a linear module is disclosed. Since an acting interval of a friction is determined by a relative velocity between two contacting surfaces, and when the relative velocity is much greater than a Stribeck velocity, there is only a Coulomb friction and a viscous friction exist between the contacting surfaces, it is possible to use a measured torque signal of this interval to identify a Coulomb friction torque, a the linear module's friction torque, and the linear module's equivalent inertia. When the relative velocity between the two contacting surfaces is smaller than the Stribeck velocity, it is possible to identify a maximum static friction torque and the Stribeck velocity by referring to the three known parameters. Thereby, all the friction parameters can be identified within one reciprocating movement of the linear module, making the method highly feasible in practice.

Abstract: A method for detecting a preload residual rate involves: a. installing a temperature sensor on one of two preloaded elements; b. making the two preloaded elements to move with respect to each other, and recording a time-related temperature variation sensed by the temperature sensor, so as to obtain an initial temperature-rising curve; c. making the two preloaded elements to move with respect to each other, and recording a time-related temperature variation sensed by the temperature sensor, so as to obtain a detected temperature-rising curve; and d. comparing the initial and detected temperature-rising curves, so as to obtain the preload residual rate between the two preloaded elements of the step c to the step b. The method detects a preload residual rate applied to an object when the object is operating while being advantageous in terms of cost, service life, response and accuracy.

Abstract: A method for detecting a preload residual rate involves: a. installing a temperature sensor on one of two preloaded elements; b. making the two preloaded elements to move with respect to each other, and recording a time-related temperature variation sensed by the temperature sensor, so as to obtain an initial temperature-rising curve; c. making the two preloaded elements to move with respect to each other, and recording a time-related temperature variation sensed by the temperature sensor, so as to obtain a detected temperature-rising curve; and d. comparing the initial and detected temperature-rising curves, so as to obtain the preload residual rate between the two preloaded elements of the step c to the step b. The method detects a preload residual rate applied to an object when the object is operating while being advantageous in terms of cost, service life, response and accuracy.

Abstract: A method for identifying friction parameters for a linear module is disclosed. Since an acting interval of a friction is determined by a relative velocity between two contacting surfaces, and when the relative velocity is much greater than a Stribeck velocity, there is only a Coulomb friction and a viscous friction exist between the contacting surfaces, it is possible to use a measured torque signal of this interval to identify a Coulomb friction torque, a the linear module's friction torque, and the linear module's equivalent inertia. When the relative velocity between the two contacting surfaces is smaller than the Stribeck velocity, it is possible to identify a maximum static friction torque and the Stribeck velocity by referring to the three known parameters. Thereby, all the friction parameters can be identified within one reciprocating movement of the linear module, making the method highly feasible in practice.